Patents by Inventor Richard Rassel
Richard Rassel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230420326Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a semiconductor layer, a device layer, and heat dissipating structures. The semiconductor layer is over the substrate and the device layer is over the semiconductor layer. The device layer includes a first ohmic contact and a second ohmic contact. The heat dissipating structures are at least through the substrate and the semiconductor layer, and between the first ohmic contact and the second ohmic contact.Type: ApplicationFiled: June 22, 2022Publication date: December 28, 2023Inventors: ZHONG-XIANG HE, RAMSEY HAZBUN, RAJENDRAN KRISHNASAMY, JOHNATAN AVRAHAM KANTAROVSKY, MICHEL ABOU-KHALIL, RICHARD RASSEL
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Patent number: 9543356Abstract: CMOS image sensor pixel sensor cells, methods for fabricating the pixel sensor cells and design structures for fabricating the pixel sensor cells are designed to allow for back side illumination in global shutter mode by providing light shielding from back side illumination of at least one transistor within the pixel sensor cells. In a first particular generalized embodiment, a light shielding layer is located and formed interposed between a first semiconductor layer that includes a photoactive region and a second semiconductor layer that includes the at least a second transistor, or a floating diffusion, that is shielded by the light blocking layer. In a second generalized embodiment, a thin film transistor and a metal-insulator-metal capacitor are used in place of a floating diffusion, and located shielded in a dielectric isolated metallization stack over a carrier substrate.Type: GrantFiled: August 10, 2009Date of Patent: January 10, 2017Assignee: GLOBALFOUNDRIES INC.Inventors: Jeffrey P. Gambino, Mark D. Jaffe, John Ellis-Monaghan, Richard Rassel
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Publication number: 20080108170Abstract: A CMOS image sensor and method of fabrication wherein the sensor includes Copper (Cu) metallization levels allowing for incorporation of a thinner interlevel dielectric stack to result in a pixel array exhibiting increased light sensitivity. The CMOS image sensor includes structures having a minimum thickness of barrier layer metal that traverses the optical path of each pixel in the sensor array or, that have portions of barrier layer metal selectively removed from the optical paths of each pixel, thereby minimizing reflectance. That is, by implementing various block or single mask methodologies, portions of the barrier layer metal are completely removed at locations of the optical path for each pixel in the array. In a further embodiment, the barrier metal layer may be formed atop the Cu metallization by a self-aligned deposition.Type: ApplicationFiled: December 19, 2007Publication date: May 8, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: James Adkisson, Jeffrey Gambino, Mark Jaffe, Robert Leidy, Richard Rassel, Anthony Stamper
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Patent number: 7364078Abstract: An apparatus for entering information into a battery test/charger that includes a bar code reader, a controller that is used to receive information from the bar code reader wherein the controller controls a battery tester/charger. In addition, a method for entering information into a battery tester/charger that includes reading a bar code and inputting information into a controller for the battery tester charger based on the bar code. An additional method of recording information about a battery that includes printing information on a bar code reflecting information about the battery and associating the bar code with the battery.Type: GrantFiled: September 6, 2002Date of Patent: April 29, 2008Assignee: SPX CorporationInventors: Kurt Raichle, Scott Krampitz, Jeff Patterson, Richard Rassel, Garret Miller
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Publication number: 20070262305Abstract: A semiconductor integrated circuit wafer containing a plurality of integrated circuit chips and having a common substrate, each chip formed with an internal region in the interior of the chip and a removable external region on the perimeter of the internal region and circuitry disposed preferably in the external region and connected to at least one pad of an integrated circuit chip and the wafer substrate to establish electrical connection during electrostatic discharge and prevent ESD damage. The pad and substrate are isolated during tested of the integrated circuit chips in the wafer. Preferably, the external region is removed when the integrated circuit chips are diced from the wafer.Type: ApplicationFiled: May 10, 2006Publication date: November 15, 2007Inventors: James Adkisson, Jeffrey Gambino, Richard Rassel, Steven Voldman
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Publication number: 20070254449Abstract: Tunable TCR resistors incorporated into integrated circuits and a method fabricating the tunable TCR resistors. The tunable TCR resistors including two or more resistors of two or more different materials having opposite polarity and different magnitude TCRs, the same polarity and different magnitude TCRs or having opposite polarity and about the same TCRs.Type: ApplicationFiled: January 26, 2007Publication date: November 1, 2007Inventors: Douglas Coolbaugh, Ebenezer Eshun, Richard Rassel, Robert Rassel
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Publication number: 20070194397Abstract: An imaging sensor with an array of FET pixels and method of forming the imaging sensor. Each pixel is a semiconductor island, e.g., N-type silicon on a Silicon on insulator (SOI) wafer. FETs are formed in one photodiode electrode, e.g., a P-well cathode. A color filter may be attached to an opposite surface of island. A protective layer (e.g., glass or quartz) or window is fixed to the pixel array at the color filters. The image sensor may be illuminated from the backside with cell wiring above the cell. So, an optical signal passes through the protective layer is filtered by the color filters and selectively sensed by a corresponding photo-sensor.Type: ApplicationFiled: February 17, 2006Publication date: August 23, 2007Inventors: James Adkisson, Jeffrey Gambino, Mark Jaffe, Alan Loiseau, Richard Rassel
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Publication number: 20070158711Abstract: Structures and method for forming the same. The semiconductor structure comprises a photo diode that includes a first semiconductor region and a second semiconductor region. The first and second semiconductor regions are doped with a first and second doping polarities, respectively, and the first and second doping polarities are opposite. The semiconductor structure also comprises a transfer gate that comprises (i) a first extension region, (ii) a second extension region, and (iii) a floating diffusion region. The first and second extension regions are in direct physical contact with the photo diode and the floating diffusion region, respectively. The semiconductor structure further comprises a charge pushing region. The charge pushing region overlaps the first semiconductor region and does not overlap the floating diffusion region. The charge pushing region comprises a transparent and electrically conducting material.Type: ApplicationFiled: January 10, 2006Publication date: July 12, 2007Inventors: James Adkisson, Jeffrey Gambino, Mark Jaffe, Jeffrey Johnson, Jerome Lasky, Richard Rassel
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Publication number: 20070153104Abstract: A pixel array in an image sensor, the image sensor and a digital camera including the image sensor. The image sensor includes a pixel array with colored pixels and unfiltered (color filter-free) pixels. Each unfiltered pixel occupies one or more array locations. The colored pixels may be arranged in uninterrupted rows and columns with unfiltered pixels disposed between the uninterrupted rows and columns. The image sensor may in CMOS with the unfiltered pixels reducing low-light noise and improving low-light sensitivity.Type: ApplicationFiled: December 30, 2005Publication date: July 5, 2007Inventors: John Ellis-Monaghan, Mark Jaffe, Alain Loiseau, Richard Rassel
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Publication number: 20070138380Abstract: A photo sensing structure and methods for forming the same. The structure includes (a) a semiconductor substrate and (b) a photo collection region on the semiconductor substrate. The structure also includes a funneled light pipe on top of the photo collection region. The funneled light pipe includes (i) a bottom cylindrical portion on top of the photo collection region of the photo collection region, and (ii) a funneled portion which has a tapered shape and is on top and in direct physical contact with the bottom cylindrical portion. The structure further includes a color filter region on top of the funneled light pipe.Type: ApplicationFiled: December 16, 2005Publication date: June 21, 2007Inventors: James Adkisson, Jeffrey Gambino, Robert Leidy, Richard Rassel
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Publication number: 20070108485Abstract: A structure (and method for forming the same) for an image sensor cell. The method includes providing a semiconductor substrate. Then, a charge collection well is formed in the semiconductor substrate, the charge collection well comprising dopants of a first doping polarity. Next, a surface pinning layer is formed in the charge collection well, the surface pinning layer comprising dopants of a second doping polarity opposite to the first doping polarity. Then, an electrically conductive push electrode is formed in direct physical contact with the surface pinning layer but not in direct physical contact with the charge collection well. Then, a transfer transistor is formed on the semiconductor substrate. The transfer transistor includes first and second source/drain regions and a channel region. The first and second source/drain regions comprise dopants of the first doping polarity. The first source/drain region is in direct physical contact with the charge collection well.Type: ApplicationFiled: January 2, 2007Publication date: May 17, 2007Inventors: James Adkisson, John Ellis-Monaghan, Jeffrey Gambino, Mark Jaffe, Richard Rassel
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Publication number: 20060186505Abstract: A structure (and method for forming the same) for an image sensor cell. The structure includes (a) a semiconductor substrate; (b) a charge collection well on the substrate, the charge collection well comprising a semiconductor material doped with a first doping polarity; (c) a surface pinning layer on and in direct physical contact with the charge collection well, the surface pinning layer comprising a semiconductor material doped with a second doping polarity opposite to the first doping polarity; and (d) an electrically conducting push electrode being in direct physical contact with the surface pinning layer but not being in direct physical contact with the charge collection well.Type: ApplicationFiled: February 23, 2005Publication date: August 24, 2006Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: James Adkisson, John Ellis-Monaghan, Jeffrey Gambino, Mark Jaffe, Richard Rassel
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Publication number: 20060145296Abstract: Tunable TCR resistors incorporated into integrated circuits and a method fabricating the tunable TCR resistors. The tunable TCR resistors including two or more resistors of two or more different materials having opposite polarity and different magnitude TCRs, the same polarity and different magnitude TCRs or having opposite polarity and about the same TCRs.Type: ApplicationFiled: January 6, 2005Publication date: July 6, 2006Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Douglas Coolbaugh, Ebenezer Eshun, Richard Rassel, Robert Rassel
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Publication number: 20060138480Abstract: An image sensor and method of fabrication wherein the sensor includes Copper (Cu) metallization levels allowing for incorporation of a thinner interlevel dielectric stack to result in a pixel array exhibiting increased light sensitivity. The image sensor includes structures having a minimum thickness of barrier layer metal that traverses the optical path of each pixel in the sensor array or, that have portions of barrier layer metal selectively removed from the optical paths of each pixel, thereby minimizing reflectance. That is, by implementing various block or single mask methodologies, portions of the barrier layer metal are completely removed at locations of the optical path for each pixel in the array. In a further embodiment, the barrier metal layer may be formed atop the Cu metallization by a self-aligned deposition.Type: ApplicationFiled: December 23, 2004Publication date: June 29, 2006Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: James Adkisson, Jeffrey Gambino, Mark Jaffe, Robert Leidy, Richard Rassel, Anthony Stamper
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Publication number: 20060110905Abstract: A bond pad for effecting through-wafer connections to an integrated circuit or electronic package and method of producing thereof. The bond pad includes a high surface area aluminum bond pad in order to resultingly obtain a highly reliable, low resistance connection between bond pad and electrical leads.Type: ApplicationFiled: November 23, 2004Publication date: May 25, 2006Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: James Adkisson, Jeffrey Gambino, Mark Jaffe, Richard Rassel, Edmund Sprogis
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Publication number: 20040000590Abstract: An apparatus for entering information into a battery tester/charger is provided. It includes a bar code reader, a controller that is used to receive information from the bar code reader wherein the controller controls a battery tester/charger. In addition, a method for entering information into a battery tester/charger is provided. The method comprises reading a bar code and inputting information into a controller for the battery tester charger based on the bar code. An additional method of recording information about a battery is provided. The method comprises printing information on a bar code reflecting information about the battery and associating the bar code with the battery.Type: ApplicationFiled: September 6, 2002Publication date: January 1, 2004Inventors: Kurt Raichle, Scott Krampitz, Jeff Patterson, Richard Rassel, Garret Miller