Abstract: Disclosed is a method of making a thin-film dielectric, comprising providing a base metal foil, forming a barium titanate-based dielectric precursor layer over a base metal foil, pre-annealing the dielectric precursor layer and base metal foil, rapidly heating the pre-annealed dielectric precursor layer from a temperature of less than 530° C. to an annealing temperature of more than 800° C. in less than 15 seconds; and annealing the dielectric to form a crystalline barium titanate-based dielectric on the base metal foil, wherein the crystalline barium titanate-based dielectric has grains with an average grain size that is greater or equal to 50 nanometers. Also disclosed is a method of making a capacitor comprised of the thin-film dielectric formed on a base metal foil according to the method described above with a second conductive layer formed over the dielectric.

Abstract: A method of embedding thick-film fired-on-foil capacitors includes entirely covering the dielectric with an encapsulating electrode to avoid cracking in the dielectric due to shrinkage and temperature coefficient of expansion differences between the electrode and dielectric.