Abstract: A heat recovery system for an electric vehicle, including first and second switchable heat sources and a controller operable to selectively switch one of the heat sources into thermal communication with a compressor in a thermodynamic cycling system, the thermodynamic cycling system being in thermal communication with a heat sink; and a detector of a temperature differential between each of the switchable heat sources and a fluid entering the compressor; wherein the controller is operable to switch one of the first and second switchable heat sources into thermal communication with the thermodynamic cycling system when a temperature differential is detected between the fluid entering the compressor in the thermodynamic cycling system and the heat available from the switchable heat source, the temperature differential being such that the compressor is operable to upgrade low grade heat from the switchable heat source to a higher grade heat upon operation of the compressor.

Abstract: Polymers synthesized by solid-phase synthesis are selectively released from a solid support by reversing the bias of spatially addressable electrodes. Change in the current and voltage direction at one or more of the spatially addressable electrodes changes the ionic environment which triggers cleavage of linkers that leads to release of the attached polymers. The spatially addressable electrodes may be implemented as CMOS inverters embedded in an integrated circuit (IC). The IC may contain an array of many thousands of spatially addressable electrodes. Control circuity may independently reverse the bias on any of the individual electrodes in the array. This provides fine-grained control of which polymers are released from the solid support. Examples of polymers that may be synthesized on this type of array include oligonucleotides and peptides.

Abstract: Polymers synthesized by solid-phase synthesis are selectively released from a solid support by reversing the bias of spatially addressable electrodes. Change in the current and voltage direction at one or more of the spatially addressable electrodes changes the ionic environment which triggers cleavage of linkers that leads to release of the attached polymers. The spatially addressable electrodes may be implemented as CMOS inverters embedded in an integrated circuit (IC). The IC may contain an array of many thousands of spatially addressable electrodes. Control circuity may independently reverse the bias on any of the individual electrodes in the array. This provides fine-grained control of which polymers are released from the solid support. Examples of polymers that may be synthesized on this type of array include oligonucleotides and peptides.

Abstract: Enclosed is a description of a high throughput 3D printing and imaging system that can be used for multiple laboratory purposes from bioassay fabrication to analysis. This compact system is designed to work with multiple microwell plates and slides. It also contains linear encoders for precise positional control in the XYZ direction. A syringe pump and 3 way select valve configuration and interrelated microfluidics are described and compact stepper motor driven linear actuators for moving tools on the gantry head is also explained. In addition, there is a visualization and sorting area for measuring droplets and for deflecting charged particles magnetized collection tubes. There is also an imaging module for quantifying fluorescence abundance and an analog signal triggered camera that can be synchronized with dispensers that can be used for synchronized imaging and data collection.

Abstract: DFM systems are provided that incorporate manufacturing variations in the analysis of integrated circuits by calculating predicted manufacturing variations on the shapes of interconnects and devices of the drawn layout of a circuit design. The shape variation on interconnects is converted to variations in resistor-capacitor (RC) parasitics. The shape variation on devices is converted to variations in device parameters. The variation in device parameters and wire parasitics is converted to changes in timing performance, signal integrity, and power consumption by determining the impact of device parameter and wire parasitic variations on the behavior of each instance of a standard cell. The results from these analyses are integrated back into the design flow as incremental delay files (timing), noise failures and buffer insertion/driver resizing commands (noise), and leakage power hotspots and cell substitution commands (power consumption).

Abstract: DFM systems are provided that incorporate manufacturing variations in the analysis of integrated circuits by calculating predicted manufacturing variations on the shapes of interconnects and devices of the drawn layout of a circuit design. The shape variation on interconnects is converted to variations in resistor-capacitor (RC) parasitics. The shape variation on devices is converted to variations in device parameters. The variation in device parameters and wire parasitics is converted to changes in timing performance, signal integrity, and power consumption by determining the impact of device parameter and wire parasitic variations on the behavior of each instance of a standard cell. The results from these analyses are integrated back into the design flow as incremental delay files (timing), noise failures and buffer insertion/driver resizing commands (noise), and leakage power hotspots and cell substitution commands (power consumption).

Abstract: DFM systems are provided that incorporate manufacturing variations in the analysis of integrated circuits by calculating predicted manufacturing variations on the shapes of interconnects and devices of the drawn layout of a circuit design. The shape variation on interconnects is converted to variations in resistor-capacitor (RC) parasitics. The shape variation on devices is converted to variations in device parameters. The variation in device parameters and wire parasitics is converted to changes in timing performance, signal integrity, and power consumption by determining the impact of device parameter and wire parasitic variations on the behavior of each instance of a standard cell. The results from these analyses are integrated back into the design flow as incremental delay files (timing), noise failures and buffer insertion/driver resizing commands (noise), and leakage power hotspots and cell substitution commands (power consumption).

Abstract: DFM systems are provided that incorporate manufacturing variations in the analysis of integrated circuits by calculating predicted manufacturing variations on the shapes of interconnects and devices of the drawn layout of a circuit design. The shape variation on interconnects is converted to variations in resistor-capacitor (RC) parasitics. The shape variation on devices is converted to variations in device parameters. The variation in device parameters and wire parasitics is converted to changes in timing performance, signal integrity, and power consumption by determining the impact of device parameter and wire parasitic variations on the behavior of each instance of a standard cell. The results from these analyses are integrated back into the design flow as incremental delay files (timing), noise failures and buffer insertion/driver resizing commands (noise), and leakage power hotspots and cell substitution commands (power consumption).

Abstract: A technique for forming a MOS capacitor (100) that can be utilized as a decoupling capacitor is disclosed. The MOS capacitor (100) is formed separately from the particular circuit device (170) that it is to service. As such, the capacitor (100) and its fabrication process can be optimized in terms of efficiency, etc. The capacitor (100) is fabricated with conductive contacts (162) that allow it to be fused to the device (170) via conductive pads (172) of the device (170). As such, the capacitor (100) and device (170) can be packaged together and valuable semiconductor real estate can be conserved as the capacitor (100) is not formed out of the same substrate as the device (170). The capacitor (100) further includes deep contacts (150, 152) whereon bond pads (180, 182) can be formed that allow electrical connection of the capacitor (100) and device (170) to the outside world.

Abstract: The present invention provides a multi-doped semiconductor e-fuse for use in an integrated circuit and a method of manufacture therefore. In one aspect, the semiconductor e-fuse 200 includes a semiconductor body 205 having a neck region 220 interposed a first portion 210 of the semiconductor body 205 and a second portion 215 of the semiconductor body 205. The semiconductor body 205 is doped with opposite type dopants, and a conductive layer 230 is located over and extends across the neck region 220 to electrically connect the first portion 210 with the second portion 215.

Abstract: A method for manufacturing a field effect transistor (100) includes steps of forming a gate stack (102) on the surface (114) of a semiconductor substrate (108), and defining source/drain regions (104, 106) on either side of the gate stack and a channel region (130) under the gate stack. The channel region has one end (132) proximate a first source/drain region and another end (134) proximate a second source/drain region. The method further includes forming a masking layer (174) on the surface of the semiconductor substrate. The masking layer has a nominal alignment position and a misalignment tolerance. The method still further includes implanting doping ions in the semiconductor substrate to asymmetrically dope the field effect transistor, including selecting a tilt angle and a rotation angle (B, D, F, H) sufficient to ensure shadowing of one end of the channel region from implantation of the doping ions.

Abstract: The present invention provides a method for forming a MOS device having self-compensating threshold adjust implants and reduced junction capacitance. A semiconductor substrate of a first conductivity type is provided. A gate oxide is formed on the surface of the semiconductor substrate, and a polysilicon gate is formed on the surface of the gate oxide. A first implant of a dopant of the first conductivity type is performed so as to form self-compensating implant regions in the semiconductor substrate on opposite sides of the gate. Disposable sidewall spacers are then formed around the polysilicon gate. A second implant of a dopant of a second conductivity type is performed so as to create highly-doped source/drain regions which are self-aligned to the sidewall spacers.