Abstract: The invention provides a process for depositing an epitaxial layer on a crystalline substrate, comprising the steps of providing a chamber having an element capable of heating, introducing the substrate into the chamber, heating the element at a temperature sufficient to decompose a source gas, passing the source gas in contact with the element; and forming an epitaxial layer on the substrate.

Abstract: A variable transmittance double pane window includes an electrochromic material that has been deposited on one pane of the window in conjunction with an array of photovoltaic cells deposited along an edge of the pane to produce the required electric power necessary to vary the effective transmittance of the window. A battery is placed in a parallel fashion to the array of photovoltaic cells to allow the user the ability to manually override the system when a desired transmittance is desired.

Abstract: A variable transmittance optical component includes an electrochromic material and a photovoltaic device-type thin film solar cell deposited in a tandem type, monolithic single coating over the component. A bleed resistor of a predetermined value is connected in series across the electrochromic material and photovoltaic device controlling the activation and deactivation of the electrochromic material. The electrical conductivity between the electrochromic material and the photovoltaic device is enhanced by interposing a transparent electrically conductive layer.

Abstract: A method for forming a dielectric film over a semiconductor device is disclosed. The body of semiconductor material is formed and a hydrogen-containing silicon nitride material substantially free of silicon-hydrogen bonds is formed thereover.Also disclosed is a semiconductor device, including a body of semiconductor material and a dielectric film thereover. The dielectric film is a hydrogen-containing silicon nitride material substantially free of silicon-to-hydrogen bonds.

Abstract: A reversible optical recording medium is comprised of an electrically conductive layer overlain by a thermoplastic layer containing a light absorptive compound selected from the group consisting of metal complexes of substituted ethylene dithiols having the structure ##STR1## where M is Pt, Pd, or Ni and R and R' are independently alkyl, phenyl or substituted phenyl groups. Information is recorded by sequentially charging the recording medium and then heating it above its softening temperature by absorption of the recording light beam in the thermoplastic layer.

Abstract: A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorous. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells.