Abstract: An ignition device for a gas appliance is provided. The ignition device includes a membrane and a plurality of heating elements embedded in the membrane, wherein the heating elements comprise a plurality of patterned resistors and wherein the plurality of heating elements are configured to heat a surface on application of voltage through the heating elements. The ignition device also includes a cavity disposed adjacent to the heating elements and configured to provide thermal isolation of the heating elements.

Abstract: A method of manufacturing an ignition device is provided. The method includes patterning a plurality of resistors on a membrane to form heating elements and thermally isolating the heating elements from an external environment via a cavity disposed adjacent to the heating elements.

Abstract: A method of processing a semiconductor substrate is provided. The method includes depositing an amorphous hydrogenated carbon film on a semiconductor substrate using a low temperature plasma deposition process and performing at least one high temperature processing step on the semiconductor substrate. The SiC substrate is processed by ion implanting at least one dopant species into at least one selected region of the SiC substrate, depositing a amorphous hydrogenated carbon film on the SiC substrate using a plasma enhanced chemical vapor deposition (PECVD) process, performing at least one high temperature processing step on the SiC substrate and removing the amorphous hydrogenated carbon film after performing the high temperature processing step.

Abstract: A control valve assembly includes an inlet for receiving a gas flow and an outlet for providing the gas flow to a gas burner. The assembly also includes a positive-shutoff valve for interrupting the gas flow from the inlet. A micro electromechanical system (MEMS) valve is coupled in series to the positive-shutoff value between the inlet and the outlet for regulating the gas flow from the inlet to the outlet.

Abstract: A piezoelectric microvalve and method for controlling a fluid flow through a piezoelectric microvalve are provided. The microvalve includes an inlet plenum and a flow directing structure for directing a fluid flow, wherein a first side of the structure is in fluid communication with the inlet plenum. The microvalve also includes a piezoelectric bending actuator comprising a flap portion responsive to a command signal for controlling a fluid flow through the flow directing structure. The microvalve further includes an outlet plenum in fluid communication with a second side of the flow directing structure.