Abstract: The present invention provides a methods and system for producing semiconductor grade single crystals that are substantially free of undesirable agglomerated defects. A vacancy/interstial (V/I) boundary simulator analyzes various melt-solid interface shapes to predict a corresponding V/I transition curve for each of the various melt-solid interface shapes. A target melt-solid interface shape corresponding to a substantially flat V/I curve is identified for each of a plurality of axial positions along the length of the crystal. Target operating parameters to achieve each of the identified melt-solid interface shapes are stored in a melt-solid interfaced shape profile. A control system is responsive to the stored profile to generate one or more control signals to control one or more output devices such that the melt-solid interfaced shape substantially follows the target shapes as defined by the profile during crystal growth.

Abstract: A data processing system is provided for tallying wealth accumulation among a plurality of competing players. Each player has a game entry device coupled to a central processing unit. The CPU receives data on an interrupt basis from each of the player stations and regulates the ordered play among the competitors. The CPU is responsive to the data for indicating a winner, calculating the accumulated point total or wealth of each of the players and for indicating the amount necessary for a player to risk in order to stay in the competition. Anyone of the player stations designated may perform house or banking functions in addition to player functions.