Abstract: In accordance with an embodiment, an electrical element includes a first portion of a first dielectric material between a first portion of a first electrical conductor and a first portion of a second electrical conductor and a second portion of the first dielectric material between a second portion of the first electrical conductor and a first portion of a third electrical conductor. In accordance with another embodiment, an electrical component has a plurality of dopant regions formed in a semiconductor material, where the dopant regions include a plurality of dopant regions formed in a dopant region of the same conductivity type. A plurality of dopant regions of an opposite conductivity type are formed in corresponding dopant regions of the first conductivity type. A metallization system is formed over the semiconductor material, where a portion of the metallization system contacts the semiconductor material.

Abstract: An electrostatic discharge robust semiconductor transistor (transistor) includes a semiconductor substrate of a first conductivity type, a substrate contact region of the first conductivity type coupled with the semiconductor substrate, a source region of a second conductivity type, a channel region of the second conductivity type, a gate region of the first conductivity type, a drain region having a first drain region of the first conductivity type and a second drain region of the second conductivity type, and an electrical conductor coupled over the second drain region and a portion of the first drain region. A portion of the first drain region not covered by the electrical conductor forms a resistive electrical ballast region configured to protect the transistor from electrostatic discharge (ESD) induced voltage pulses. In implementations the transistor includes a silicon controlled rectifier (SCR) junction field effect transistor (SCR JFET) or a laterally diffused metal-oxide semiconductor (SCR LDMOS).

Abstract: An electrostatic discharge robust semiconductor transistor (transistor) includes a semiconductor substrate of a first conductivity type, a substrate contact region of the first conductivity type coupled with the semiconductor substrate, a source region of a second conductivity type, a channel region of the second conductivity type, a gate region of the first conductivity type, a drain region having a first drain region of the first conductivity type and a second drain region of the second conductivity type, and an electrical conductor coupled over the second drain region and a portion of the first drain region. A portion of the first drain region not covered by the electrical conductor forms a resistive electrical ballast region configured to protect the transistor from electrostatic discharge (ESD) induced voltage pulses. In implementations the transistor includes a silicon controlled rectifier (SCR) junction field effect transistor (SCR JFET) or a laterally diffused metal-oxide semiconductor (SCR LDMOS).

Abstract: An illustrative embodiment of an integrated circuit configured for galvanically isolated signaling includes a transfer conductor carrying a modulated carrier signal. A floating transfer loop is electromagnetically coupled to the transfer conductor to receive the modulated carrier signal. The floating transfer loop includes a primary of a step-up transformer. A receiver is coupled to a secondary of the step-up transformer to receive the modulated carrier signal in an amplified, differential fashion, and to demodulate the modulated carrier signal to obtain a digital receive signal.

Abstract: In accordance with an embodiment, an electrical element includes a first portion of a first dielectric material between a first portion of a first electrical conductor and a first portion of a second electrical conductor and a second portion of the first dielectric material between a second portion of the first electrical conductor and a first portion of a third electrical conductor. In accordance with another embodiment, an electrical component has a plurality of dopant regions formed in a semiconductor material, where the dopant regions include a plurality of dopant regions formed in a dopant region of the same conductivity type. A plurality of dopant regions of an opposite conductivity type are formed in corresponding dopant regions of the first conductivity type. A metallization system is formed over the semiconductor material, where a portion of the metallization system contacts the semiconductor material.

Abstract: In accordance with an embodiment, a method of manufacturing an electrical component that may include a high voltage capacitor that includes providing a semiconductor material of a second conductivity type in which first doped region of a first conductivity type is formed. A plurality of doped regions of the first conductivity type and a plurality of doped regions of the second conductivity type are formed in the first doped region. A first p-n junction is formed between first doped regions of the first and second conductivity types and a second p-n junction is formed between second doped regions of the first and second conductivity types. A metallization system is formed above the doped regions so that capacitors are formed by a parallel connection of a first metal layer to a polysilicon layer and the first metal layer to a second metal layer.

Abstract: Coupled resonators for galvanically isolated signaling between integrated circuit modules. An illustrative system embodiment includes first and second integrated circuits. The first integrated circuit includes: a transmitter that produces a modulated carrier signal on a primary conductor; a first transfer conductor connected to a first connection terminal; and a first floating loop electromagnetically coupled to the primary conductor and to the transfer conductor to convey the modulated carrier. The second integrated circuit includes: a second transfer conductor connected to a second connection terminal, the second connection terminal being electrically connected to the first connection terminal; a receiver that demodulates the modulated carrier signal; and a second floating loop electromagnetically coupled to the second transfer conductor and to the receiver to convey the modulated carrier signal to the receiver.

Abstract: Coupled resonators for galvanically isolated signaling between integrated circuit modules. An illustrative multi-module integrated circuit comprises: a transmitter in a first module, the transmitter providing a modulated carrier signal; a receiver in a second module demodulating the modulated carrier signal; and a galvanically isolated signaling path that includes: a first integrated resonator in the first module and a second integrated resonator in the second module, the first and second integrated resonators being resonantly coupled to convey the modulated carrier signal from the transmitter to the receiver.

Abstract: An illustrative integrated circuit configured for galvanically isolated signaling includes a receiver having: a detector module coupled to receive a differential signal from terminals of a transformer secondary, the detector module responsively presenting an impedance that varies based on a magnitude of the differential signal; a biasing module that converts the detector module impedance to a response signal; and a comparator module that compares the response signal to a reference signal to obtain a detection signal indicative of oscillation in the differential signal.

Abstract: An illustrative integrated circuit configured for galvanically isolated signaling includes a receiver having: a detector module coupled to receive a differential signal from terminals of a transformer secondary, the detector module responsively presenting an impedance that varies based on a magnitude of the differential signal; a biasing module that converts the detector module impedance to a response signal; and a comparator module that compares the response signal to a reference signal to obtain a detection signal indicative of oscillation in the differential signal.

Abstract: Coupled resonators for galvanically isolated signaling between integrated circuit modules. An illustrative multi-module integrated circuit comprises: a transmitter in a first module, the transmitter providing a modulated carrier signal; a receiver in a second module demodulating the modulated carrier signal; and a galvanically isolated signaling path that includes: a first integrated resonator in the first module and a second integrated resonator in the second module, the first and second integrated resonators being resonantly coupled to convey the modulated carrier signal from the transmitter to the receiver.

Abstract: An illustrative embodiment of an integrated circuit configured for galvanically isolated signaling includes a transfer conductor carrying a modulated carrier signal. A floating transfer loop is electromagnetically coupled to the transfer conductor to receive the modulated carrier signal. The floating transfer loop includes a primary of a step-up transformer. A receiver is coupled to a secondary of the step-up transformer to receive the modulated carrier signal in an amplified, differential fashion, and to demodulate the modulated carrier signal to obtain a digital receive signal.

Abstract: An electrostatic discharge robust semiconductor transistor (transistor) includes a semiconductor substrate of a first conductivity type, a substrate contact region of the first conductivity type coupled with the semiconductor substrate, a source region of a second conductivity type, a channel region of the second conductivity type, a gate region of the first conductivity type, a drain region having a first drain region of the first conductivity type and a second drain region of the second conductivity type, and an electrical conductor coupled over the second drain region and a portion of the first drain region. A portion of the first drain region not covered by the electrical conductor forms a resistive electrical ballast region configured to protect the transistor from electrostatic discharge (ESD) induced voltage pulses. In implementations the transistor includes a silicon controlled rectifier (SCR) junction field effect transistor (SCR JFET) or a laterally diffused metal-oxide semiconductor (SCR LDMOS).

Abstract: In accordance with an embodiment, an electrical element includes a first portion of a first dielectric material between a first portion of a first electrical conductor and a first portion of a second electrical conductor and a second portion of the first dielectric material between a second portion of the first electrical conductor and a first portion of a third electrical conductor. In accordance with another embodiment, a method includes forming a first electrically conductive structure over a first portion of the first layer of dielectric material and forming a second electrically conductive structure over a second portion of the first layer of dielectric material. A second layer of dielectric material is formed over the first electrically conductive structure and a third electrically conductive structure over the second layer of dielectric material, wherein the third electrically conductive structure is over portions of the first and second electrically conductive structures.