Abstract: An imaging device may have an array of image sensor pixels and image readout circuitry coupled to the array of image sensor pixels. Predictive pre-charge circuitry may be coupled to the array of image sensor pixels and the image readout circuitry. The predictive pre-charge circuitry and the image readout circuitry may perform correlated double sampling operations during charge readout, comparing the charge generated by the array of image pixels to a known reset value. The predictive pre-charge circuitry may pre-charge output lines from the array of image pixels, thereby reducing the time needed for the circuitry to read out the charge after being reset. The output lines may be pre-charged prior to reading out the charge of a row of image sensor pixels based on a voltage associated with the charge generated by at least one previous row of image sensor pixels of the array of image sensor pixels.

Abstract: An imaging device may have an array of image sensor pixels and image readout circuitry coupled to the array of image sensor pixels. Predictive pre-charge circuitry may be coupled to the array of image sensor pixels and the image readout circuitry. The predictive pre-charge circuitry and the image readout circuitry may perform correlated double sampling operations during charge readout, comparing the charge generated by the array of image pixels to a known reset value. The predictive pre-charge circuitry may pre-charge output lines from the array of image pixels, thereby reducing the time needed for the circuitry to read out the charge after being reset. The output lines may be pre-charged prior to reading out the charge of a row of image sensor pixels based on a voltage associated with the charge generated by at least one previous row of image sensor pixels of the array of image sensor pixels.

Abstract: Various embodiments of the present technology may comprise a method and apparatus for anti-eclipse circuit verification. According to various embodiments, the image sensor is configured to test and/or determine the functionality of the anti-eclipse circuit. In various embodiments, the anti-eclipse circuit may employ redundant circuits and/or devices. In a case where a circuit fault is detected, the image sensor generates an error signal.

Abstract: Various embodiments of the present technology may comprise a method and apparatus for anti-eclipse circuit verification. According to various embodiments, the image sensor is configured to test and/or determine the functionality of the anti-eclipse circuit. In various embodiments, the anti-eclipse circuit may employ redundant circuits and/or devices. In a case where a circuit fault is detected, the image sensor generates an error signal.

Abstract: An image sensor may include an array of image pixels formed in rows and columns. Each image pixel in the array may include a photodiode and multiple signal readout paths connected to the photodiode. Each readout path may include a separate floating diffusion node and source follower transistor. The number of signal readout paths simultaneously enabled during an image capture operation may be determined by the exposure level such that the pixel operates with either high or low conversion gain. Several such image pixels of like color in the pixel array may be connected via a shared photodiode interconnection line such that image signals from interconnected pixels may either be binned and read out on a single readout path or read out individual on separate readout paths.

Abstract: Various embodiments of the present technology may comprise methods and devices for improving the spectral response of an imaging device. The methods and devices may operate in conjunction with a pixel array and color filter array. The color filter array may comprise pattern of color filters arranged in groups. At least one group may comprise multiple same-color filters and at least one filter of a different color.

Abstract: Various embodiments of the present technology may comprise a method and apparatus for pixel binning and readout. The method and apparatus may determine a region of interest and a region of non-interest within an image frame according to a detected feature. In various embodiments, the method and apparatus may readout each row in the region of interest resulting in a high resolution region and combine the pixels within the region of non-interest resulting in a low resolution region.

Abstract: Various embodiments of the present technology may comprise a method and apparatus for pixel binning and readout. The method and apparatus may determine a region of interest and a region of non-interest within an image frame according to a detected feature. In various embodiments, the method and apparatus may readout each row in the region of interest resulting in a high resolution region and combine the pixels within the region of non-interest resulting in a low resolution region.

Abstract: An image sensor may include an array of image pixels formed in rows and columns. Each image pixel in the array may include a photodiode and multiple signal readout paths connected to the photodiode. Each readout path may include a separate floating diffusion node and source follower transistor. The number of signal readout paths simultaneously enabled during an image capture operation may be determined by the exposure level such that the pixel operates with either high or low conversion gain. Several such image pixels of like color in the pixel array may be connected via a shared photodiode interconnection line such that image signals from interconnected pixels may either be binned and read out on a single readout path or read out individual on separate readout paths.

Abstract: An imager may include depth sensing pixels that provide an asymmetrical angular response to incident light. The depth sensing pixels may each include a substrate region formed from a photosensitive portion and a non-photosensitive portion. The depth sensing pixels may include mechanisms that prevent regions of the substrate from receiving incident light. Depth sensing pixel pairs may be formed from depth sensing pixels that have different asymmetrical angular responses. Each of the depth sensing pixel pairs may effectively divide the corresponding imaging lens into separate portions. Depth information for each depth sensing pixel pair may be determined based on the difference between output signals of the depth sensing pixels of that depth sensing pixel pair. The imager may be formed from various combinations of depth sensing pixel pairs and color sensing pixel pairs arranged in a Bayer pattern or other desired patterns.

Abstract: An image sensor may include one or more pixels having a coupled gate structure that may selectively route overflow charge from a photodiode to increase the dynamic range of the pixel. The coupled gate structure may include two, three or four transistors. During charge accumulation in the pixel, overflow charge may pass from a photodiode to the coupled gate structure to be selectively routed to one of a plurality of paths. Timing of control signals for a subset of the transistors in the coupled gate structure may alternate such that only one transistor is active to pass charge to one of the plurality of paths at any given time. Depending on the selected path, overflow charge may be routed to a pixel voltage supply or to one or more storage nodes in the pixel. Pixels may also include a dual-gain structure, which may provide additional charge storage capacity.

Abstract: Various embodiments of the present technology may comprise methods and devices for improving the spectral response of an imaging device. The methods and devices may operate in conjunction with a pixel array and color filter array. The color filter array may comprise pattern of color filters arranged in groups. At least one group may comprise multiple same-color filters and at least one filter of a different color.

Abstract: Various embodiments of the present technology may comprise methods and systems image sensors. The methods and systems may comprise selectively activating either high or low conversion gain mode for a predetermined number of rows by comparing pixel row data to predetermined threshold values prior to image signal processing.

Abstract: Various embodiments of the present technology may comprise a method and apparatus for a pixel array. Each pixel may include multiple storage regions capable of storing pixel signals during integration. The method and apparatus may utilize the floating diffusion region as a storage region during both an integration period and readout period. The method and apparatus may store pixel signals corresponding to a first exposure periods in the floating diffusion region and pixel signals corresponding to a second exposure periods in a separate storage region.

Abstract: Various embodiments of the present technology may comprise a method and apparatus for a pixel array. Each pixel may include multiple storage regions capable of storing pixel signals during integration. The method and apparatus may utilize the floating diffusion region as a storage region during both an integration period and readout period. The method and apparatus may store pixel signals corresponding to a first exposure periods in the floating diffusion region and pixel signals corresponding to a second exposure periods in a separate storage region.

Abstract: Various embodiments of the present technology may comprise a method and apparatus for a polarizing filter. The polarizing filter may be formed such that the filter has varying polarization axes for blocking reflected light emitted from various directions. The method and apparatus may utilize metal wires or molecular chains to form curved lines across the filter, where the curved lines define the polarization axes.

Abstract: An image sensor may include an image pixel array with both image pixels to gather image data and phase detection pixels to gather phase information. The image sensor may dynamically group the phase detection pixels into focus zones. Based on the characteristics of the scene being imaged and the use settings of the image sensor, the image sensor may determine the size, shape, and number of focus zones to be grouped. One or more focus zones may then be used to gather phase information data. The focus zones may vary in size and shape across the pixel array. A scene with low illumination level may result in larger focus zones with more phase detection pixels to ensure reliable phase information data.

Abstract: Various embodiments of the present technology may comprise methods and systems image sensors. The methods and systems may comprise selectively activating either high or low conversion gain mode for a predetermined number of rows by comparing pixel row data to predetermined threshold values prior to image signal processing.

Abstract: An imaging device may include an image pixel array with pixels used to gather phase detection information. The pixels in the image pixel array may use a photosensitive region to generate charge during an integration period. During the integration period, certain pixels in the image pixel array may not be needed to gather phase detection information. These pixels may be electrically connected to a bias voltage supply line during the integration period so that any generated charge is drained to the bias voltage supply line. Draining charge in the unused pixels may prevent blooming that would compromise the phase detection information gathered by neighboring pixels.

Abstract: An image sensor may include a pixel array having visible and infrared imaging pixels for simultaneously detecting light in the visible and infrared spectral ranges. The pixel array may include an array of photodiodes, an array of filter elements formed over the photodiodes, and an array of microlenses formed over the array of filter elements. The filter elements may include infrared cutoff filter elements that block infrared light while passing visible light. The infrared cutoff filter elements may be formed from a patterned layer of infrared blocking material. Each visible imaging pixel includes a portion of the infrared blocking material and a color filter element. Each infrared imaging pixel is aligned with an opening in the infrared blocking material. The opening may be filled with an infrared pass filter element that passes infrared light while blocking visible light.