Abstract: Device for achieving homogeneous thickness growth and doping on a semiconductor wafer (2) with a diameter greater than 100 mm during growth at elevated temperature in a growth chamber arranged in a reactor housing comprising a growth chamber (14) with a wafer (2) on a rotating susceptor (3), where the growth chamber (14) has, an inlet channel (17) for the supply of process gases and an outlet channel (18) for discharge of unused process gases to create a process gas flow over the semiconductor wafer (2), and an injector (4) at the end of the inlet channel (17) where it opens into the growth chamber (14), where the injector (4) is divided into at least 3 gas ducts with a first gas duct B and at each side of it a second gas channel A and a third gas channel C, and where the magnitude of the gas flow in the gas duct B and gas concentrations in the gas duct B are arranged to be controlled independent of gas flows and gas concentrations in gas channels A and C.

Abstract: A device to ensure planarity of a semiconductor wafer during growth at an increased temperature in a growth chamber arranged in a reactor housing where the device includes a growth chamber having a port to allow the deposition of at least one wafer on a rotating susceptor in the growth chamber and the withdrawal of the wafer. The growth chamber has an inlet channel for a supply of process gases and an outlet channel for a discharge of not consumed process gases to create a process gas flow between said channels. Separate heaters are adjacent to the growth chamber to heat the rotating wafer with individually controlled heating zones both above and under the wafer. An instrument measures the bending of the wafer, and an automatic control circuit uses data from temperature sensors or measured data of power supplied to the heaters and the instrument measuring bending of the wafer to change the temperature in said temperature zones so that bending of the wafer is minimized.

Abstract: A device, system and method for depositing crystalline layers on at least one crystalline substrate is described. The disclosure includes the use of a multi zone heater, the multi zone heater is disposed between a reactor housing and a process chamber. The multi zone heater has different electrical properties along its length, whereby the multi zone heater when heated by eddy currents induced by an RF field generated by a RF heating coil provides a temperature profile inside the multi zone heater that varies along the length of the multi zone heater for heating the process chamber.

Abstract: The invention relates to a method for the production of a pipe section (2), for insertion in a damaged pipeline or channel after the relining process, comprising an essentially cylindrical pipe section (4), with a collar end-piece (10) and an end (16), which may be introduced in the collar end-piece of an adjacent, corresponding pipe section. The invention is characterised in that the essentially cylindrical pipe section (4) is produced by winding a flat material (32) around a core (34) and formed by seam- or butt-welding or similar, or for a non-circular tube profile produced by means of shaping and, optionally, subsequent sectioning. The collar end-piece (10) is produced by partial sliding of a suitable pre-formed separate collar ring (8) onto one end (6) of the essentially cylindrical pipe section (4) and subsequent fixing to the above by means of fillet or socket welding.

Abstract: A fluid conduit containment system includes an inner carrier conduit of a first type of resinous thermoplastic material having a first heat weldable annular end face and an outer safety containment conduit formed of a second type of heat weldable, resinous thermoplastic material aligned coaxially in outwardly surrounding, radially spaced apart relation with the inner conduit for containing any fluid leakage therefrom. The second conduit has a second heat weldable annular end face in concentric coplanar relation with the first heat weldable end face and an anchor-spacer extends between the inner and outer conduits for maintaining the conduits in permanently spaced apart relation. The anchor-spacer includes a pair of coaxially aligned spacer rings or halves joining a circumferential outside surface on the inner carrier conduit and extending radially outwardly thereof to engage a circumferential inside surface on the outer containment conduit.