Abstract: System and methods are disclosed to promote safe shoving movements of a train based on train position localization without human-based track operations monitoring. Train position detectors deployed at the end of a track, in parallel to the track, between the rails of the track, or a combination thereof, localize an end-of-train during shoving movements. Each train position detector transmits an early warning alert to an onboard alert device and a handheld alert device for indicating the end of the train is about to enter a pre-configured prohibited zone. The locomotive operator receives the alert on the onboard alert device while workers in the railyard receive the alert on the handheld alert devices. Both onboard and handheld alert devices are capable of generating audio, visual, haptic, or a combination of these warning alerts for the locomotive operator and the workers in the railyard.

Abstract: Techniques are described that enable a high-capacity memory chip based on three-dimensional SpinRAM cells and modules, and support electronics, at least some of which, are implemented with all-metal solid-state components.

Abstract: Techniques are described that enable a high-capacity memory chip based on three-dimensional SpinRAM cells and modules, and support electronics, at least some of which, are implemented with all-metal solid-state components.

Abstract: Magnetic random-access memory (RAM) cells and arrays are described based on magnetoresistive thin-film structures.

Abstract: Magnetic random-access memory (RAM) cells and arrays are described based on magnetoresistive thin-film structures.

Abstract: Multi-period structures exhibiting giant magnetoresistance (GMR) are described in which the exchange coupling across the active interfaces of the structure is ferromagnetic.

Abstract: Various magnetoresistive memory cells and architectures are described which enable nonvolatile memories having high information density.

Abstract: Multi-period structures exhibiting giant magnetoresistance (GMR) are described in which the exchange coupling across the active interfaces of the structure is ferromagnetic.

Abstract: Various magnetoresistive memory cells and architectures are described which enable nonvolatile memories having high information density.

Abstract: Various magnetoresistive memory cells and architectures are included which enable nonvolatile memories having high information density.

Abstract: Various magnetoresistive memory cells and architectures are described which enable nonvolatile memories having high information density.

Abstract: Electronic systems are described including semiconductor circuitry characterized by first signals and all-metal circuitry characterized by second signals and comprising a plurality of transpinnors. Each transpinnor includes a network of thin-film elements. At least one thin-film element in each transpinnor exhibits giant magnetoresistance. Each transpinnor includes a conductor inductively coupled to the at least one thin-film element for controlling operation of the transpinnor. Interface circuitry connects the semiconductor circuitry to the all-metal circuitry and converts between the first signals and the second signals.

Abstract: A radiation detector is described which includes first circuitry having at least one operational parameter associated therewith which is operable to change in response to radiation exposure. Second circuitry is operable to detect a change in the at least one operational parameter based on a predetermined relation between the at least one operational parameter and at least one type of radiation. The second circuitry is also operable to encode detection information representative of the radiation exposure in response thereto.

Abstract: A radiation detector is described which includes first circuitry having at least one operational parameter associated therewith which is operable to change in response to radiation exposure. Second circuitry is operable to detect a change in the at least one operational parameter based on a predetermined relation between the at least one operational parameter and at least one type of radiation. The second circuitry is also operable to encode detection information representative of the radiation exposure in response thereto.

Abstract: A display device is described having a panel and all-metal electronics formed on a surface of the panel and operable to control operation of a plurality of basic visible elements associated with the panel.

Abstract: A three-dimensional circuit and methods for fabricating such a circuit are described. The three-dimensional circuit includes a plurality of stacked levels on a substrate. Each level includes a plurality of all-metal circuit components exhibiting giant magnetoresistance and arranged in two dimensions, the circuit further includes an interconnect for providing interconnections between the circuit components on different ones of the plurality of levels.

Abstract: A solid-state component including a network of multi-layer structures is described. Each multi-layer structure exhibits magnetoresistance and has magnetization vectors associated therewith which are operable to be switched at least in part by current-induced magnetization reversal. The solid-state component generates an output signal when the network of multi-layer structures is resistively imbalanced. The output signal corresponds to output nodes in the network and is a function of an input signal applied at input nodes in the network.

Abstract: A nonvolatile sequential machine is described which includes a semiconductor controller operable to control operation of the nonvolatile sequential machine according to a state machine comprising a plurality of states. The nonvolatile sequential machine further includes a plurality of state registers operable to store the plurality of states. The state registers comprise nonvolatile random-access memory operation of which is based on giant magnetoresistance.

Abstract: A display device is described having a panel and all-metal electronics formed on a surface of the panel and operable to control operation of a plurality of basic visible elements associated with the panel.

Abstract: Magnetic random-access memory (RAM) cells and arrays are described based on magnetoresistive thin-film structures.