Abstract: Disclosed herein are system, method, and computer program product embodiments for illumination roasting. A lighting attribute may be determined based on an indication that a food product is within a chamber and a type of the food product. Based on an illumination of the food product according to the lighting attribute (e.g., a wavelength value, a lumens value, a wattage value, etc.), a change to the temperature profile of the food product may occur. The change in the temperature profile operates to roast the food product.

Abstract: A valve assembly is provided including a thermoplastic injection molded flow body and an electrical bonding connection providing a bonding path between the thermoplastic injection molded flow body and an external ground point. The thermoplastic injection molded flow body is formed of a resin having a fill matrix suspended therein. The electrical bonding connection includes either a metallic saddle and a retaining bolt, mechanically retaining the metallic saddle to a support rib of the valve flow body or a metallic threaded insert molded into the at least one support rib and a retaining bolt inserted into mating threads of the metallic threaded insert. The electrical bonding connection provides a bonding path between the valve flow body and an external ground point.

Abstract: A nitride semiconductor is grown on a silicon substrate by depositing a few mono-layers of aluminum to protect the silicon substrate from ammonia used during the growth process, and then forming a nucleation layer from aluminum nitride and a buffer structure including multiple superlattices of AlRGa(1-R)N semiconductors having different compositions and an intermediate layer of GaN or other Ga-rich nitride semiconductor. The resulting structure has superior crystal quality. The silicon substrate used in epitaxial growth is removed before completion of the device so as to provide superior electrical properties in devices such as high-electron mobility transistors.

Abstract: A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n? doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n? doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.

Abstract: A repeatable and uniform low doped layer is formed using modulation doping by forming alternating sub-layers of doped and undoped nitride semiconductor material atop another layer. A Schottky diode is formed of such a low doped nitride semiconductor layer disposed atop a much more highly doped nitride semiconductor layer. The resulting device has both a low on-resistance when the device is forward biased and a high breakdown voltage when the device is reverse biased.

Abstract: A lateral conduction Schottky diode includes multiple mesa regions upon which Schottky contacts are formed and which are at least separated by ohmic contacts to reduce the current path length and reduce current crowding in the Schottky contact, thereby reducing the forward resistance of a device. The multiple mesas may be isolated from one another and have sizes and shapes optimized for reducing the forward resistance. Alternatively, some of the mesas may be finger-shaped and intersect with a central mesa or a bridge mesa, and some or all of the ohmic contacts are interdigitated with the finger-shaped mesas. The dimensions of the finger-shaped mesas and the perimeter of the intersecting structure may be optimized to reduce the forward resistance. The Schottky diodes may be mounted to a submount in a flip chip arrangement that further reduces the forward voltage as well as improves power dissertation and reduces heat generation.

Abstract: A wafer carrier for growing wafers includes a plate having a first surface and a second surface, a plurality of openings extending from the first surface to the second surface of the plate, and a porous element disposed in each of the plurality of openings, each porous element being adapted to support one or more wafers. The wafer carrier also has a blind central opening extending from the second surface toward the first surface of the plate, and a plurality of shafts extending outwardly from the blind central opening. Each shaft has a first end in communication with the blind central opening and a second end in communication with one of the porous elements for providing fluid communication between the blind central opening and one of the porous elements. Suction is formed at a surface of each porous element by drawing vacuum through the blind central opening and the shafts.