Abstract: A memory system including a first chip having a processor, and a second chip having a DRAM sector that includes: a plurality of DRAM arrays; an output circuit configured to store a plurality of data values read from the DRAM arrays; a first set of through silicon vias (TSVs) connecting the processor to the DRAM sector, wherein the first processor transmits a plurality of weight data values to the DRAM sector on the first set of TSVs; a plurality of comparator arrays coupled to receive the plurality of weight data values and the plurality of data values read from the DRAM arrays, and in response, generate a plurality of comparison output values; and a second set of TSVs connecting the processor to the DRAM sector, wherein the plurality of comparison output values are transmitted from DRAM sector to the processor on the second set of TSVs.

Abstract: A dynamic random access memory (DRAM) device may include an array of DRAM cells, with each DRAM cell configured to store a high logic voltage and a low logic voltage. The DRAM device may further include a precharge circuit configured to selectively provide a first reference voltage and a second reference voltage to a first line and a second line, respectively, and a sense amplifier comprising a cross-coupled transistor sensing circuit coupled between the first line and second line. The sense amplifier may include at least one transistor including a superlattice channel. The DRAM device may further include a refresh circuit configured to selectively couple a third reference voltage to a corresponding DRAM cell via the first line and based upon a voltage difference between the first line and the second line, with the third reference voltage being greater than the high logic voltage of the DRAM cell.

Abstract: A method for making a semiconductor device may include forming active circuitry on a substrate including differential transistor pairs, and forming threshold voltage test circuitry on the substrate. The threshold voltage test circuitry may include a pair of differential test transistors replicating the differential transistor pairs within the active circuitry, with each test transistor having a respective input and output, and at least one gain stage configured to amplify a difference between the outputs of the differential test transistors for measuring a threshold voltage thereof. The differential transistor pairs and the pair of differential test transistors each includes spaced apart source and drain regions, a channel region extending between the source and drain regions, and a gate overlying the channel region. Moreover, each of the channel regions may include a superlattice.

Abstract: A semiconductor device may include a plurality of memory cells, and at least one peripheral circuit coupled to the plurality of memory cells and comprising a superlattice. The superlattice may include a plurality of stacked groups of layers with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon constrained within a crystal lattice of adjacent base semiconductor portions. The semiconductor device may further include a first power switching device configured to couple the at least one peripheral circuit to a first voltage supply during a first operating mode, and a second power switching device configured to couple the at least one peripheral circuit to a second voltage supply lower than the first voltage supply during a second operating mode.

Abstract: A semiconductor device may include a substrate, active circuitry on the substrate and including differential transistor pairs, and threshold voltage test circuitry on the substrate. The threshold voltage test circuitry may include a pair of differential test transistors replicating the differential transistor pairs within the active circuitry, with each test transistor having a respective input and output, and at least one gain stage configured to amplify a difference between the outputs of the differential test transistors for measuring a threshold voltage thereof. The differential transistor pairs and the pair of differential test transistors may each include spaced apart source and drain regions, a channel region extending between the source and drain regions, and a gate overlying the channel region. Each of the channel regions may include a superlattice.

Abstract: A semiconductor device may include a substrate, active circuitry on the substrate and including differential transistor pairs, and threshold voltage test circuitry on the substrate. The threshold voltage test circuitry may include a pair of differential test transistors replicating the differential transistor pairs within the active circuitry, with each test transistor having a respective input and output, and at least one gain stage configured to amplify a difference between the outputs of the differential test transistors for measuring a threshold voltage thereof. The differential transistor pairs and the pair of differential test transistors may each include spaced apart source and drain regions, a channel region extending between the source and drain regions, and a gate overlying the channel region. Each of the channel regions may include a superlattice.

Abstract: A method for making a semiconductor device may include forming active circuitry on a substrate including differential transistor pairs, and forming threshold voltage test circuitry on the substrate. The threshold voltage test circuitry may include a pair of differential test transistors replicating the differential transistor pairs within the active circuitry, with each test transistor having a respective input and output, and at least one gain stage configured to amplify a difference between the outputs of the differential test transistors for measuring a threshold voltage thereof. The differential transistor pairs and the pair of differential test transistors each includes spaced apart source and drain regions, a channel region extending between the source and drain regions, and a gate overlying the channel region. Moreover, each of the channel regions may include a superlattice.

Abstract: A semiconductor device may include a plurality of memory cells, and at least one peripheral circuit coupled to the plurality of memory cells and comprising a superlattice. The superlattice may include a plurality of stacked groups of layers with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon constrained within a crystal lattice of adjacent base semiconductor portions. The semiconductor device may further include a first power switching device configured to couple the at least one peripheral circuit to a first voltage supply during a first operating mode, and a second power switching device configured to couple the at least one peripheral circuit to a second voltage supply lower than the first voltage supply during a second operating mode.

Abstract: A programmable input/output buffer has a first plurality of pull-down transistors connected between a supply voltage and an electrical system conductor on the integrated circuit and a second plurality of pull-down transistors connected between the electrical conductor and the system reference voltage. Reference circuits generate signals to turn on a first number of said first plurality of pull-up transistors and/or a second number of said second plurality of pull-down transistors to provide an input/output buffer impedance matching the impedance of the external transmission line either sending a signal to the programmable input/output buffer or receiving a signal from the programmable input/output buffer.

Abstract: A programmable input/output buffer has a first plurality of pull-down transistors connected between a supply voltage and an electrical system conductor on the integrated circuit and a second plurality of pull-down transistors connected between the electrical conductor and the system reference voltage. Reference circuits generate signals to turn on a first number of said first plurality of pull-up transistors and/or a second number of said second plurality of pull-down transistors to provide an input/output buffer impedance matching the impedance of the external transmission line either sending a signal to the programmable input/output buffer or receiving a signal from the programmable input/output buffer.

Abstract: An independent memory architecture is provided which includes a plurality of multi-line channels each capable of carrying either data or address information to a plurality of independent memory clusters. The channels operate independently to access and store data in separate ones of the memory clusters. The independent operation enables faster and more efficient utilization within a memory device over any prior art memory architecture. Each of the clusters have one or more independently addressable memory banks respectively having a plurality of data storage locations organized into respective arrays with each of the storage locations having a distinct column and row address.

Abstract: An independent and cooperative memory architecture is provided which includes a plurality of multi-line channels each capable of carrying either data or address information to a plurality of independent memory clusters. The channels can either operate independently to access and store data in separate ones of the memory clusters, or cooperatively to access and store data in one of the memory clusters. The independent and cooperative operation enables faster and more efficient utilization within a memory device over any prior art memory architecture. Each of the clusters have one or more independently addressable memory banks respectively having a plurality of data storage locations organized into respective arrays with each of the storage locations having a distinct column and row address. The multi-line channels provide a plurality of distinct operating modes for conducting selected data read and/or write transactions within the clusters.

Abstract: A signal transfer circuit for enabling rapids transfer of differential electrical signals among multiple signal paths is provided. The circuit comprises first and second pairs of signal transfer terminals, a pair of internal nodes, first and second pairs of isolation devices, a differential signal amplifier, a gain-enhancing cross-coupled pair of devices, and a precharge circuit. The first and second pairs of isolation devices are of a single device type and are coupled between respective ones of the signal transfer terminal pairs and the internal node pair. The isolation devices each have a control terminal for receiving an isolation control signal. The differential signal amplifier circuit is coupled to the internal nodes, and is comprised of complementary device types. The amplifier circuit has a control terminal for receiving an amplifier control signal for enabling the amplifier circuit.

Abstract: An independent and cooperative memory architecture is provided which includes a plurality of multi-line channels each capable of carrying either data or address information to a plurality of independent memory clusters. The memory architecture includes a slave port for shifting the burden of scheduling and synchronization from a master device to a memory device. By coupling the master device's clock signal to a counter and to an enabler coupled to a FIFO, the slave port makes it possible for the master device to request data from the memory device and to begin clocking out the requested data from the slave port after a fixed number of clock cycles of the master device's clock. The slave port guarantees that data from the memory device is available to the master device following an output access time of the memory device.