Abstract: In one general aspect, an apparatus can include a semiconductor region having an active region, and an end trench defined within a termination region of the semiconductor region where the end trench has a curved shape.

Abstract: In one general aspect, an apparatus can include a semiconductor region, and a trench defined within the semiconductor region. The trench can have a depth aligned along a vertical axis and have a length aligned along a longitudinal axis orthogonal to the vertical axis. The trench can have a first portion of the length included in a termination region of the semiconductor region and can have a second portion of the length included in an active region of the semiconductor region.

Abstract: A thrust reverser torque box assembly for an aircraft engine is constructed with a torque tube having a cross section configuration tailored and conducive to carrying torsion and discrete major fittings at opposite ends of the torque tube that connect the torque tube and thrust reverser actuation and reacts loading due to reverse thrust operation to the aircraft engine fan case.

Abstract: Vertical doping in power semiconductor devices and methods for making such dopant profiles are described. The methods include providing a semiconductor substrate, providing an epitaxial layer on the substrate, the epitaxial layer comprising a bottom portion containing a first conductivity type dopant in a substantially constant, first concentration throughout the bottom portion; and an upper portion containing a first conductivity type dopant having a second concentration lower than the first concentration; providing a trench in the epitaxial layer; forming a transistor structure in the trench; and forming a well region in the upper part of the epitaxial layer adjacent the trench, the well region containing a second conductivity type dopant that is opposite the first conductivity type. Other embodiments are described.

Abstract: In one general aspect, an apparatus can include a semiconductor region, and a trench defined within the semiconductor region. The trench can have a depth aligned along a vertical axis and have a length aligned along a longitudinal axis orthogonal to the vertical axis. The trench can have a first portion of the length included in a termination region of the semiconductor region and can have a second portion of the length included in an active region of the semiconductor region.

Abstract: A method for forming thick oxide at the bottom of a trench formed in a semiconductor substrate includes forming a conformal oxide film by a sub-atmospheric chemical vapor deposition process that fills the trench and covers a top surface of the substrate. The method also includes etching the oxide film off the top surface of the substrate and inside the trench to leave a substantially flat layer of oxide having a target thickness at the bottom of the trench.

Abstract: A circumferential row of aerofoil members span an annular duct for carrying a flow of compressible fluid. The duct is centered on the axis of a turbomachine. Pressure and suction surfaces of neighboring aerofoil members bound respective sectoral passages which receive the flow of compressible fluid. The row of aerofoil members includes at least one radial endwall to which the tangent to the trailing edge of each aerofoil member at midspan is substantially orthogonal. Each aerofoil member has reverse compound lean. Each aerofoil member further has a leading edge which has a position at the endwall which is upstream of its position at midspan. The endwall at each sectoral passage has a non-axisymmetrical cross-section formed by a region that, in meridional section, is convexly profiled immediately adjacent the pressure surface and a region that, in meridional section, is concavely profiled immediately adjacent the suction surface.

Abstract: Methods of manufacturing power semiconductor devices include forming an epitaxial and dielectric layer, patterning and etching the dielectric layer, forming a first oxide layer, forming a first conductive layer on top of the first oxide layer, etching the first conductive layer away inside an active trench, forming a second oxide layer and second conductive layer. The second conductive layer does not extend completely over the first conductive layer in a first region outside of the active trench. The methods further include forming a third oxide layer over the second conductive layer, etching a first opening through the third oxide layer exposing the second conductive layer outside the active trench, etching a second opening through the second oxide layer outside the active trench in the first region exposing the first conductive layer but not the second conductive layer, and filling the first and second openings with conductive material.

Abstract: A frame has an opening, a gate mechanism partially bounding the opening, and a longitudinally extending rail. A tool that has a slot is adapted to receive the rail to removably attach the tool to the frame. The gate mechanism includes a gate that is pivotably coupled to the frame to permits access to the opening in the frame.

Abstract: Methods of manufacturing power semiconductor devices include forming an epitaxial and dielectric layer, patterning and etching the dielectric layer, forming a first oxide layer, forming a first conductive layer on top of the first oxide layer, etching the first conductive layer away inside an active trench, forming a second oxide layer and second conductive layer. The second conductive layer does not extend completely over the first conductive layer in a first region outside of the active trench. The methods further include forming a third oxide layer over the second conductive layer, etching a first opening through the third oxide layer exposing the second conductive layer outside the active trench, etching a second opening through the second oxide layer outside the active trench in the first region exposing the first conductive layer but not the second conductive layer, and filling the first and second openings with conductive material.

Abstract: A semiconductor power device includes active trenches that define an active area and an edge area that is located outside of the active area. The active trenches include a lower shield poly, an upper gate poly, a first oxide layer and a second oxide layer wherein the first oxide layer separates the lower shield poly from the upper gate poly and the second oxide layer covers the upper gate poly. The lower shield poly, upper gate poly, first oxide layer and second oxide layer conform to the shapo of the active trench and extend from the active trench to a surface of the edge area. The edge area includes a first opening that extends through the first oxide layer to the lower shield poly and a second opening that extends through the second oxide layer to the upper gate poly.

Abstract: The present disclosure provides methods and apparatus for estimating advertisement impressions and advertiser search share. These estimates are improved by eliminating duplicate traffic based on similar words having similar traffic estimates. In addition, coverage is estimated for a particular advertiser keywords using statistical sampling. This coverage estimate is then used as a weighing factor when estimating traffic for an entire business category (e.g., group of keywords) by squaring the individual traffic estimates, summing the squared estimates, and then taking the square root of that sum.

Abstract: The present disclosure provides a system that filters out underperforming ads from a historical database of ads and leaves the most effective ads by applying three separate filters. The first filter removes ineffective ads based on coverage. Coverage is the percentage of the time that an ad appears for a given keyword. The second filter removes ads which appear below some threshold position (e.g., position five in Google), because many search engines reward ads with high clickthrough rates with a position bonus. The third filter removes ads which have not run some minimum threshold period of time (e.g., four weeks). Advertisers may then view the remaining ads (i.e., the effective ads) associated with keywords of interest and mine those ads for words to be used in their own ad copy.

Abstract: A frame has an opening, a gate mechanism partially bounding the opening, and a longitudinally extending rail. A tool that has a slot is adapted to receive the rail to removably attach the tool to the frame. The gate mechanism includes a gate that is pivotably coupled to the frame to permits access to the opening in the frame.

Abstract: A semiconductor power device includes active trenches that define an active area and an edge area that is located outside of the active area. The active trenches include a lower shield poly, an upper gate poly, a first oxide layer and a second oxide layer wherein the first oxide layer separates the lower shield poly from the upper gate poly and the second oxide layer covers the upper gate poly. The lower shield poly, upper gate poly, first oxide layer and second oxide layer conform to the shape of the active trench and extend from the active trench to a surface of the edge area. The edge area includes a first opening that extends through the first oxide layer to the lower shield poly and a second opening that extends through the second oxide layer to the upper gate poly. The first opening is filled with a conductive material that makes electrical contact with the lower shield poly and the second opening is filled with conductive material that makes electrical contact with the upper gate poly.

Abstract: A circumferential row of aerofoil members span an annular duct for carrying a flow of compressible fluid. The duct is centred on the axis of a turbomachine. Pressure and suction surfaces of neighbouring aerofoil members bound respective sectoral passages which receive the flow of compressible fluid. The row comprises at least one radial endwall to which the tangent to the trailing edge of each aerofoil member at midspan is substantially orthogonal. Each aerofoil member has reverse compound lean. Each aerofoil member further has a leading edge which has a position at the endwall which is upstream of its position at midspan.

Abstract: A base composition is provided which comprises water and a non-ionic surfactant mixture. The base composition is suitable for use in preparing a personal care product.

Abstract: The present invention relates to an aeratable as well as an aerated product that comprises water, liquid oils, salt and sugar esters, as well as to food and non-food products comprising such an aerated product as well as a method to produce such an aerated product.