Patents by Inventor Richard T. L. SAEZ

Richard T. L. SAEZ has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8935117
    Abstract: A testing circuit in an integrated circuit indirectly measures a voltage at a node of other circuitry in the integrated circuit. The testing circuit includes a transistor having a control electrode, a first conducting electrode coupled to a first pad, a second conducting electrode coupled to a terminal of a power supply, and one or more switches for selectively coupling the control electrode to one of the node and a second pad. A method includes determining a relationship between drain current and gate voltage of the transistor when the control electrode is coupled to the second pad. A voltage at the node is determined by relating the current through the first conducting electrode of the transistor when control electrode is coupled to the node.
    Type: Grant
    Filed: March 9, 2012
    Date of Patent: January 13, 2015
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Walter Luis Tercariol, Richard T. L. Saez, Fernando Zampronho Neto, Ivan Carlos Ribeiro Nascimento
  • Publication number: 20130238273
    Abstract: A testing circuit (100) in an integrated circuit (102) indirectly measures a voltage at a node of other circuitry (104) in the integrated circuit. The testing circuit includes a transistor (120) having a control electrode (121), a first conducting electrode (122) coupled to a first pad (150), a second conducting electrode (123) coupled to a terminal of a power supply, and one or more switches (131 and 133) for selectively coupling the control electrode to one of the node and a second pad (140). A method includes determining a relationship between drain current and gate voltage of the transistor when the control electrode is coupled to the second pad. A voltage at the node is determined by relating the current through the first conducting electrode of the transistor when control electrode is coupled to the node.
    Type: Application
    Filed: March 9, 2012
    Publication date: September 12, 2013
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventors: Walter Luis TERCARIOL, Richard T. L. SAEZ, Fernando Zampronho NETO, Ivan Carlos Ribeiro NASCIMENTO