Patents by Inventor RICHARD TAYLOR, III

RICHARD TAYLOR, III has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Lateral bipolar junction transistors having an emitter extension and a halo region
    Patent number: 11652142
    Abstract: A structure for a lateral bipolar junction transistor is provided. The structure comprising an emitter including a first concentration of a first dopant. A collector including a second concentration of the first dopant, the first concentration of the first dopant may be different from the second concentration of the first dopant. An intrinsic base may be laterally arranged between the emitter and the collector, and an extrinsic base region may be above the intrinsic base. An emitter extension may be arranged adjacent to the emitter, whereby the emitter extension laterally extends under a portion of the extrinsic base region. A halo region may be arranged adjacent to the emitter extension, whereby the halo region laterally extends under another portion of the extrinsic base region.
    Type: Grant
    Filed: September 22, 2021
    Date of Patent: May 16, 2023
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Mankyu Yang, Richard Taylor, III, Alexander Derrickson, Alexander Martin, Jagar Singh, Judson Robert Holt, Haiting Wang
  • LATERAL BIPOLAR JUNCTION TRANSISTORS HAVING AN EMITTER EXTENSION AND A HALO REGION
    Publication number: 20230092435
    Abstract: A structure for a lateral bipolar junction transistor is provided. The structure comprising an emitter including a first concentration of a first dopant. A collector including a second concentration of the first dopant, the first concentration of the first dopant may be different from the second concentration of the first dopant. An intrinsic base may be laterally arranged between the emitter and the collector, and an extrinsic base region may be above the intrinsic base. An emitter extension may be arranged adjacent to the emitter, whereby the emitter extension laterally extends under a portion of the extrinsic base region. A halo region may be arranged adjacent to the emitter extension, whereby the halo region laterally extends under another portion of the extrinsic base region.
    Type: Application
    Filed: September 22, 2021
    Publication date: March 23, 2023
    Inventors: MANKYU YANG, RICHARD TAYLOR, III, ALEXANDER DERRICKSON, ALEXANDER MARTIN, JAGAR SINGH, JUDSON ROBERT HOLT, HAITING WANG