Abstract: A method for producing a metal powder includes maintaining molten reducing metal in a sealed reaction vessel that is free of added oxygen and water, establishing a vortex in the molten reducing metal, introducing a metal halide into the vortex so that the molten reducing metal is in a stoichiometric excess to the metal halide, thereby producing metal particles and salt, removing unreacted reducing metal, removing the salt, and recovering the metal powder. The molten reducing metal can be a Group I metal, a Group II metal, or aluminum.

Abstract: A method for producing a metal powder includes maintaining molten reducing metal in a sealed reaction vessel that is free of added oxygen and water, establishing a vortex in the molten reducing metal, introducing a metal halide into the vortex so that the molten reducing metal is in a stoichiometric excess to the metal halide, thereby producing metal particles and salt, removing unreacted reducing metal, removing the salt, and recovering the metal powder. The molten reducing metal can be a Group I metal, a Group II metal, or aluminum.

Abstract: A method for producing a metal powder includes maintaining molten reducing metal in a sealed reaction vessel that is free of added oxygen and water, establishing a vortex in the molten reducing metal, introducing a metal halide into the vortex so that the molten reducing metal is in a stoichiometric excess to the metal halide, thereby producing metal particles and salt, removing unreacted reducing metal, removing the salt, and recovering the metal powder. The molten reducing metal can be a Group I metal, a Group II metal, or aluminum.

Abstract: A method for producing a metal powder includes maintaining molten reducing metal in a sealed reaction vessel that is free of added oxygen and water, establishing a vortex in the molten reducing metal, introducing a metal halide into the vortex so that the molten reducing metal is in a stoichiometric excess to the metal halide, thereby producing metal particles and salt, removing unreacted reducing metal, removing the salt, and recovering the metal powder. The molten reducing metal can be a Group I metal, a Group II metal, or aluminum.

Abstract: A wafer grooving apparatus (100) for forming an elongate recess (103) in a semiconductor wafer surface, the apparatus comprising: a wafer table (110) for receiving and holding a semiconductor wafer; a radiation device (120) for generating a radiation beam (121); a beam directing device (130) for directing the radiation beam to a top surface (102) of the wafer so as to create a beam spot (142) where the radiation beam ablates wafer material on the wafer surface to form a recess; a wafer table displacement drive (170) for effecting a mutual displacement between the radiation beam and the wafer surface in a radiation beam displacement direction; a recess profile measuring device (180) arranged at a predetermined distance behind the beam directing device in the radiation beam displacement direction effected by the wafer table displacement drive for measuring a depth profile of the recess that has been formed by the radiation beam.

Abstract: A method for producing a metal powder includes maintaining molten reducing metal in a sealed reaction vessel that is substantially free of oxygen and water, establishing a vortex in the molten reducing metal, introducing a metal halide into the vortex so that the molten reducing metal is in a stoichiometric excess to the metal halide, thereby producing metal particles and salt, removing unreacted reducing metal, removing the salt, and recovering the metal powder. The molten reducing metal can be a Group I metal, a Group II metal, or aluminum.

Abstract: A method for producing a metal powder that combines molten reducing metal and metal halide in a space that is substantially free of oxygen and water, wherein the molten reducing metal is sodium and/or potassium, or aluminum (or magnesium or titanium) and is present in a stoichiometric excess to the metal halide which is a solid or liquid, thereby producing metal particles and salt, removing unreacted reducing metal, optionally removing the salt, and recovering the metal powder, is described. A method for producing a metal masterbatch wherein the molten reducing metal is aluminum, magnesium, and/or titanium and after combining molten aluminum (or magnesium or titanium) and metal halide in the reaction space, substantially removing the produced metal salt to obtain the metal masterbatch which comprises at least a portion of the molten aluminum (or magnesium or titanium) and at least one metal also is described.

Abstract: A wafer grooving apparatus (100) for forming an elongate recess (103) in a semiconductor wafer surface, the apparatus comprising: a wafer table (110) for receiving and holding a semiconductor wafer; a radiation device (120) for generating a radiation beam (121); a beam directing device (130) for directing the radiation beam to a top surface (102) of the wafer so as to create a beam spot (142) where the radiation beam ablates wafer material on the wafer surface to form a recess; a wafer table displacement drive (170) for effecting a mutual displacement between the radiation beam and the wafer surface in a radiation beam displacement direction; a recess profile measuring device (180) arranged at a predetermined distance behind the beam directing device in the radiation beam displacement direction effected by the wafer table displacement drive for measuring a depth profile of the recess that has been formed by the radiation beam.

Abstract: A method for producing a metal powder includes maintaining molten reducing metal in a sealed reaction vessel that is substantially free of oxygen and water, establishing a vortex in the molten reducing metal, introducing a metal halide into the vortex so that the molten reducing metal is in a stoichiometric excess to the metal halide, thereby producing metal particles and salt, removing unreacted reducing metal, removing the salt, and recovering the metal powder. The molten reducing metal can be a Group I metal, a Group II metal, or aluminum.

Abstract: A method for manufacturing a microelectronic package (1) comprises the steps of providing two parts (13, 14) comprising electrically insulating material such as plastic; providing members (21, 22, 23) comprising electrically conductive material; providing a microelectronic device (30); positioning the electrically conductive members (21, 22, 23) and the microelectronic device (30) on the electrically insulating parts (13, 14); and placing the electrically insulating parts (13, 14) against each other, wherein the microelectronic device (30) and portions of the electrically conductive members (21, 22, 23) are sandwiched between the electrically insulating parts (13, 14). The electrically conductive members (21, 22, 23) are intended to be used for realizing contact of the microelectronic device (30) arranged inside the package (1) to the external world.

Abstract: A method for manufacturing a microelectronic package (1) comprises the steps of providing two parts (13, 14) comprising electrically insulating material such as plastic; providing members (21, 22, 23) comprising electrically conductive material; providing a microelectronic device (30); positioning the electrically conductive members (21, 22, 23) and the microelectronic device (30) on the electrically insulating parts (13, 14); and placing the electrically insulating parts (13, 14) against each other, wherein microelectronic device (30) and portions of the electrically conductive members (21, 22, 23) are sandwiched between the electrically insulating parts (13, 14). The electrically conductive members (21, 22, 23) are intended to be used for realizing contact of the micro-electronic device (30) arranged inside the package (1) to the external world.