Abstract: A method electrically and mechanically interconnects two surfaces of high density first and second semiconductor devices. The first semiconductor device (10) is formed with plug members (22) connected to nodes (18) of its circuit elements (14) and protruding from the first semiconductor device. The second semiconductor device (24) is formed having receptacle members (36) connected to nodes (32) of its circuit elements (28) and protruding from the second semiconductor device. The plug members are inserted into the receptacle member to interconnect the first and second semiconductor devices. The plug members may be removed from the receptacle member to disconnect the first and second semiconductor devices.

Abstract: An integrated circuit substrate (26) is formed with active circuit elements (24, 32) on first and second surfaces of the substrate. The active circuit elements are interconnected with though-substrate vias (28) to minimize signal routing and reduce propagation delay. The through-substrate vias may be formed with a plurality of holes (52) through the IC substrate. A dielectric layer (54) is deposited on the surface of the IC substrate and through the holes. A conductive layer (56) is deposited through the holes to form the through-substrate vias. The dielectric layer is removed from the surface of the IC substrate to leave the through-substrate vias isolated from the IC substrate by the dielectric layer. A second substrate (26) is formed as described and the two substrates are joined as a two-sided chip (21) with active circuit elements on both sides interconnected by through-substrate vias.

Abstract: An electronic notepad comprises a wire/display area for receiving and displaying graphic information, a control for the device and a keyboard for entering information and/or instructions. Two types of liquid crystal display arrays, both fabricated on a semiconductor substrate with logic cells and reflector/field electrodes thereon are described. Further, two methods of sensing the position of a stylus are described whereby a user may enter graphic information directly into the notepad.

Abstract: Apparatus and method are provided for thermally treating a semiconductor substrate. According to the method, the substrate is isothermally heated to an elevated temperature near the thermal treatment temperature and then is further heated to a higher temperature at which the thermal treatment occurs. Following the thermal treatment the substrate is isothermally cooled to a sufficiently low temperature to avoid thermally induced defects.

Abstract: A method is provided for semiconductor ribbon-to-ribbon conversion in a rigid edge mode. A combination carrier and mask is provided by which the ribbon is secured during the conversion process. The carrier holds the ribbon and simultaneously masks the edges of the ribbon from the heating effects of an impinging energy beam. The energy beam, such as a laser or electron beam, impinges on the ribbon and creates a molten zone which extends through the thickness of the ribbon. During the growth process, the molten zone is caused to move along the length of the ribbon. The mask prevents melting of the extreme edge portions of the ribbon and thus allows a rapid growth rate and a stable molten zone without sophisticated electronic equipment to gate the energy beam at the ribbon edges.

Abstract: Apparatus is provided for semiconductor ribbon-to-ribbon conversion in a rigid edge mode. A combination carrier and mask is provided by which the ribbon is secured during the conversion process. The carrier holds the ribbon and simultaneously masks the edges of the ribbon from the heating effects of an impinging energy beam. The energy beam, such as a laser or electron beam, impinges on the ribbon and creates a molten zone which extends through the thickness of the ribbon. During the growth process, the molten zone is caused to move along the length of the ribbon. The mask prevents melting of the extreme edge portions of the ribbon and thus allows a rapid growth rate and a stable molten zone without sophisticated electronic equipment to gate the energy beam at the ribbon edges.

Abstract: A method is provided for converting polycrystalline ribbon to macrocrystalline ribbon in which a molten zone is formed in and moved along the polycrystalline ribbon. Macrocrystalline material in ribbon shape is formed as the molten region passes and the molten material resolidifies. The molten zone is formed in the polycrystalline ribbon by impinging energy beams from two energy sources on the two major surfaces of the ribbon. The combined energy from the first and second energy sources is sufficient to melt the ribbon material and to form a molten zone extending through the thickness of the ribbon. The molten zone has an intersection with each of the major surfaces of the ribbon. The two energy sources are adjusted independently to control the area of the intersection of the molten zone with each surface so that the areas are non-identical.

Abstract: A method for the substantially continuous growth of polycrystalline silicon ribbon. The polycrystalline silicon is chemically vapor deposited on elongated foils which move slowly through a resistance heated furnace chamber. Vapor sealing entrance and exit ports are provided which allow the continuous transfer of the foils and polycrystalline ribbon between the chamber and the ambient. The foils are positioned within the chamber so as to mask the chamber walls and to restrict the deposition to the foils. All deposition of polycrystalline silicon takes place on one side of each of the foil pieces; deposition on the edges or backs of the foils is prevented by the positioning of the foils relative to each other. Adhesion of the foils to each other is prevented by insuring that all foils are in relative motion.

Abstract: A method for the measurement of minority carrier lifetime in semiconductor wafers, sheets and ribbons by purely optical means. The method does not require electrical or MOS contacts to the wafer, nor does it require any specific processing to facilitate measurement. The technique is non-destructive, and is applicable to any semiconductor wafer, with or without surface dielectric films (e.g., SiO.sub.2, Si.sub.3 N.sub.4, Ta.sub.2 O.sub.5) as long as it has no metal films. This technique is fast, accurate, and of reasonable high resolution, so that it may be applied to evaluate the effects of specific process steps (e.g., ribbon growth, diffusion, oxidation, ion implantation, delectric deposition, annealing) in real time and hence serve as a production control technique as well as a research tool. By utilizing reasonable equipment sophistication, this technique should enable the measurement of lifetime over a wide range of values, covering the scale from high-speed bipolar devices and integrated circuits (.

Abstract: A method for the substantially continuous growth of polycrystalline silicon ribbon. The polycrystalline silicon is chemically vapor deposited on elongated foils which move slowly through a resistance heated furnace chamber. Vapor sealing entrance and exit ports are provided which allow the continuous transfer of the foils and polycrystalline ribbon between the chamber and the ambient. The foils are positioned within the chamber so as to mask the chamber walls and to restrict the deposition to the foils. All deposition of polycrystalline silicon takes place on one side of each of the foil pieces; deposition on the edges or backs of the foils is prevented by the positioning of the foils relative to each other. Adhesion of the foils to each other is prevented by insuring that all foils are in relative motion.

Abstract: A liquid crystal memory device comprising a liquid crystal layer, means for preconditioning the layer so that at least some of its molecules will be slanted towards one of two possible tilt directions, means for causing at least some of the molecules of said liquid crystal layer to assume their preconditioned tilt direction, and means for determining which of said possible tilt directions has been assumed by the molecules of said liquid crystal layer is disclosed.

Abstract: A polycrystalline semiconductor sheet may be converted to a macrocrystalline or monocrystalline semiconductor sheet through use of a controlled melt perturbation in the sheet. The process is initiated by formation of a small melt area generally in the center of the sheet of polycrystalline material and then by controlled sweeping motions a molten zone is ultimately formed across the entire width of the sheet. As the molten zone is allowed to solidify crystals of large size are formed, and with proper control of this crystal, can grow across the entire width of the polycrystalline sheet, or at least crystals of sufficiently large size for production of semiconductor activity may be produced.Following formation of macrocrystalline material across the width of the sheet the perturbation may be continued throughout the process to sweep any dislocations or crystal boundaries to the edge of the sheet where they may be trimmed from the remainder of the material as desired.

Abstract: A polycrystalline semiconductor sheet may be converted to a monocrystalline or macrocrystalline semiconductor sheet through use of a geometric restriction in the sheet. The process requires formation of a region of the sheet having a small width compared to the width of the remainder of the sheet. A molten zone is formed in the small width region of the sheet. At least a portion of the molten zone is allowed to solidify into a single crystal or crystals of large size of the semiconductor material coextensive with the small width of the region at the portion of the molten zone so solidified. The molten zone is then moved from the small width region of the sheet into the remainder of the sheet. The sheet is allowed to solidify successively as the molten zone passes along it. As a result, the macrocrystal formed in the narrow width region of the sheet propagates into the remainder of the sheet through which the molten zone passes.

Abstract: A solar engine having a plurality of elements which convert solar energy to usable mechanical motion, such as a piston and a thermally expandable fluid in a cylinder. The sun's rays are focused on a movable mirror which is provided to selectively direct the thermal energy to each of the piston and cylinder thermal energy converting elements. The thermal energy causes expansion of the fluid in the selected cylinder, thus moving the piston to provide mechanical motion. The thermodynamic cycle employed can be selected by the proper choice of the movable mirror timing and by the construction of the piston driven elements of the engine. The result is an efficient, flexible solar engine in which intermediate storage of thermal energy from the sun is not necessary.