Patents by Inventor Richard W. Kennedy

Richard W. Kennedy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10407745
    Abstract: A method of producing an article selected from a titanium article and a titanium alloy article comprises melting feed materials with a source of hydrogen to form a molten heat of titanium or a titanium alloy, and casting at least a portion of the molten heat to form a hydrogenated titanium or titanium alloy ingot. The hydrogenated ingot is deformed at an elevated temperature to form a worked article comprising a cross-sectional area smaller than a cross-sectional area of the hydrogenated ingot. The worked article is dehydrogenated to reduce a hydrogen content of the worked article. In certain non-limiting embodiments of the method, the dehydrogenated article comprises an average ?-phase particle size of less than 10 microns in the longest dimension.
    Type: Grant
    Filed: June 6, 2018
    Date of Patent: September 10, 2019
    Assignee: ATI PROPERTIES LLC
    Inventors: Richard L. Kennedy, Robert M. Davis, Rex W. Bradley, Robin M. Forbes Jones
  • Patent number: 4239560
    Abstract: A p-type region is formed in a semiconductor body by diffusion of aluminum from an aluminum oxide source in an open tube process. Both ceramic aluminum oxide and sapphire sources are described and an inert atmosphere of argon and hydrogen provides stable results. An alternative embodiment provides both the deep diffusion characteristics of aluminum with the high surface concentration of boron by using a boron nitride wafer carrier.
    Type: Grant
    Filed: May 21, 1979
    Date of Patent: December 16, 1980
    Assignee: General Electric Company
    Inventors: Mike F. Chang, David K. Hartman, Richard W. Kennedy, Alfred Roesch, Henri B. Assalit
  • Patent number: 4188245
    Abstract: A method for selectively diffusing a semiconductor body with p-conductivity type impurities utilizing aluminum as a diffusion source and able to be performed in a reuseable open diffusion tube is described. A gas flow is established in the diffusion tube which is essentially an inert gas and includes from one to ten percent oxygen. Simultaneous blanket and selective diffusions may be formed in accordance with this invention by modifying the amount of oxygen in the flow.
    Type: Grant
    Filed: September 18, 1978
    Date of Patent: February 12, 1980
    Assignee: General Electric Company
    Inventors: Mike F. Chang, Alfred Roesch, Richard W. Kennedy
  • Patent number: 4148672
    Abstract: Disclosed is a rectifier pellet and a method for the fabrication thereof. A layer of oxide is grown on a semiconductor wafer that has been diffused to form a plurality of rectifier pellets, and openings are etched in the oxide at locations corresponding to each pellet. Gold is diffused through the openings into a preselected distribution to reduce turnoff time. Grooves are etched to facilitate glass passivation and division of the wafer into pellets.
    Type: Grant
    Filed: September 12, 1977
    Date of Patent: April 10, 1979
    Assignee: General Electric Company
    Inventors: Richard W. Kennedy, Edward G. Tefft
  • Patent number: 4104786
    Abstract: Disclosed is a semiconductor device and a method for the manufacture thereof. A semiconductor wafer with three stacked regions is provided. An inner region exhibits one conductivity type and the two outer regions exhibit the opposite conductivity type. Isolation regions of the opposite conductivity type are formed by the temperature gradient zone melting process to separate the wafer into a plurality of device regions. Peripheral grooves are cut in one major surface in each device region. The grooves extend into the interior region thus electrically isolating the portion of the major surface within the grooves from the other major surface. The grooves are filled with a passivation material.
    Type: Grant
    Filed: February 11, 1977
    Date of Patent: August 8, 1978
    Assignee: General Electric Company
    Inventors: John K. Boah, Richard W. Kennedy
  • Patent number: 4063272
    Abstract: Disclosed is a semiconductor device and a method for the manufacture thereof. A semiconductor wafer with three stacked regions is provided. An inner region exhibits one conductivity type and the two outer regions exhibit the opposite conductivity type. Isolation regions of the opposite conductivity type are formed by the temperature gradient zone melting process to separate the wafer into a plurality of device regions. Peripheral grooves are cut in one major surface in each device region. The grooves extend into the interior region thus electrically isolating the portion of the major surface within the grooves from the other major surface. The grooves are filled with a passivation material.
    Type: Grant
    Filed: November 26, 1975
    Date of Patent: December 13, 1977
    Assignee: General Electric Company
    Inventors: John K. Boah, Richard W. Kennedy
  • Patent number: 4061510
    Abstract: Disclosed is a rectifier pellet and a method for the fabrication thereof. A layer of oxide is grown on a semiconductor wafer that has been diffused to form a plurality of rectifier pellets, and openings are etched in the oxide at locations corresponding to each pellet. Gold is diffused through the openings into a preselected distribution to reduce turnoff time. Grooves are etched to facilitate glass passivation and division of the wafer into pellets.
    Type: Grant
    Filed: February 2, 1976
    Date of Patent: December 6, 1977
    Assignee: General Electric Company
    Inventors: Richard W. Kennedy, Edward G. Tefft
  • Patent number: 3943013
    Abstract: Disclosed is a bidirectional triode thyristor pellet that comprises two current conductive regions and a gate region. Gold is diffused into the boundaries between the several regions to inhibit carrier migration thereacross and thus reduce turnoff time. Also disclosed is a method of fabricating the subject thyristor pellet that permits glass passivation thereof if desired.
    Type: Grant
    Filed: October 11, 1973
    Date of Patent: March 9, 1976
    Assignee: General Electric Company
    Inventors: Richard W. Kennedy, Edward G. Tefft
  • Patent number: 3941625
    Abstract: Disclosed is an SCR pellet and a method for the fabrication thereof. A layer of oxide is grown on a semiconductor wafer that has been diffused to form a plurality of SCR pellets and openings are etched in the oxide at locations corresponding to each pellet. Gold is diffused through the openings into a preselected distribution in the base region to reduce turnoff time. Grooves are etched to facilitate glass passivation and division of the wafer into pellets.
    Type: Grant
    Filed: October 11, 1973
    Date of Patent: March 2, 1976
    Assignee: General Electric Company
    Inventors: Richard W. Kennedy, Edward G. Tefft