Patents by Inventor Richard W. Plavidal
Richard W. Plavidal has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11814744Abstract: Systems for cleaning electroplating system components may include an electroplating apparatus including a plating bath vessel. The electroplating apparatus may include a rinsing frame extending above the plating bath vessel. The rinsing frame may include a rim extending circumferentially about an upper surface of the plating bath vessel and defining a rinsing channel between the rim and the upper surface of the plating bath vessel. The electroplating apparatus may also include a rinsing assembly including a splash guard that is translatable from a recessed first position to a second position extending at least partially across an access to the plating bath vessel. The rinsing assembly may also include a fluid nozzle extending from the rinsing frame.Type: GrantFiled: March 29, 2019Date of Patent: November 14, 2023Assignee: Applied Materials, Inc.Inventors: Nolan Zimmerman, Gregory J. Wilson, Andrew Anten, Richard W. Plavidal, Eric J. Bergman, Tricia Youngbull, Timothy Gale Stolt, Sam Lee
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Publication number: 20230349064Abstract: Electroplating processing systems according to the present technology may include a recirculating tank containing a first volume of processing fluid. The recirculating tank may be fluidly coupled with a delivery pump. The systems may include a vessel configured to receive the processing fluid from the pump. The vessel may include an inner chamber and an outer chamber, and the inner chamber may be sized to hold a second volume of processing fluid less than the first volume of processing fluid. A liquid level sensor may be associated with the vessel to provide a liquid level indication in the outer chamber. The systems may include a return line coupled with an outlet of the vessel and coupled with an inlet of the recirculating tank. The systems may also include a return pump fluidly coupled with the return line. The return pump may be electrically coupled with the liquid level sensor.Type: ApplicationFiled: July 6, 2023Publication date: November 2, 2023Applicant: Applied Materials, Inc.Inventors: Cameron Law, Daniel Durado, Thomas Oberlitner, Richard W. Plavidal
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Publication number: 20230352402Abstract: Processing methods may be performed to form a fan-out interconnect structure. The methods may include forming a semiconductor active device structure overlying a first substrate. The semiconductor active device structure may include first conductive contacts. The methods may include forming an interconnect structure overlying a second substrate. The interconnect structure may include second conductive contacts. The methods may also include joining the first substrate with the second substrate. The joining may include coupling the first conductive contacts with the second conductive contacts. The interconnect structure may extend beyond the lateral dimensions of the semiconductor active device structure.Type: ApplicationFiled: July 10, 2023Publication date: November 2, 2023Applicant: Applied Materials, Inc.Inventors: Richard W. Plavidal, Albert Lan
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Patent number: 11699651Abstract: Processing methods may be performed to form a fan-out interconnect structure. The methods may include forming a semiconductor active device structure overlying a first substrate. The semiconductor active device structure may include first conductive contacts. The methods may include forming an interconnect structure overlying a second substrate. The interconnect structure may include second conductive contacts. The methods may also include joining the first substrate with the second substrate. The joining may include coupling the first conductive contacts with the second conductive contacts. The interconnect structure may extend beyond the lateral dimensions of the semiconductor active device structure.Type: GrantFiled: October 22, 2018Date of Patent: July 11, 2023Assignee: Applied Materials, Inc.Inventors: Richard W. Plavidal, Albert Lan
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Patent number: 10971354Abstract: Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.Type: GrantFiled: July 14, 2017Date of Patent: April 6, 2021Assignee: Applied Materials, Inc.Inventors: Eric J. Bergman, John L. Klocke, Paul McHugh, Stuart Crane, Richard W. Plavidal
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Publication number: 20200152467Abstract: Electroplating processing systems according to the present technology may include a recirculating tank containing a first volume of processing fluid. The recirculating tank may be fluidly coupled with a delivery pump. The systems may include a vessel configured to receive the processing fluid from the pump. The vessel may include an inner chamber and an outer chamber, and the inner chamber may be sized to hold a second volume of processing fluid less than the first volume of processing fluid. A liquid level sensor may be associated with the vessel to provide a liquid level indication in the outer chamber. The systems may include a return line coupled with an outlet of the vessel and coupled with an inlet of the recirculating tank. The systems may also include a return pump fluidly coupled with the return line. The return pump may be electrically coupled with the liquid level sensor.Type: ApplicationFiled: January 10, 2020Publication date: May 14, 2020Applicant: Applied Materials, Inc.Inventors: Cameron Law, Daniel Durado, Thomas Oberlitner, Richard W. Plavidal
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Patent number: 10546762Abstract: Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.Type: GrantFiled: November 15, 2017Date of Patent: January 28, 2020Assignee: Applied Materials, Inc.Inventors: Eric J. Bergman, John L. Klocke, Paul McHugh, Stuart Crane, Richard W. Plavidal
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Publication number: 20190301049Abstract: Systems for cleaning electroplating system components may include an electroplating apparatus including a plating bath vessel. The electroplating apparatus may include a rinsing frame extending above the plating bath vessel. The rinsing frame may include a rim extending circumferentially about an upper surface of the plating bath vessel and defining a rinsing channel between the rim and the upper surface of the plating bath vessel. The electroplating apparatus may also include a rinsing assembly including a splash guard that is translatable from a recessed first position to a second position extending at least partially across an access to the plating bath vessel. The rinsing assembly may also include a fluid nozzle extending from the rinsing frame.Type: ApplicationFiled: March 29, 2019Publication date: October 3, 2019Applicant: Applied Materials, Inc.Inventors: Nolan Zimmerman, Greg Wilson, Andrew Anten, Richard W. Plavidal, Eric J. Bergman, Tricia Youngbull, Timothy Gale Stolt, Sam Lee
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Patent number: 10373864Abstract: Methods of wetting a semiconductor substrate may include forming a controlled atmosphere in a processing chamber housing the semiconductor substrate. The semiconductor substrate may define a plurality of features, which may include vias. The methods may include flowing a wetting agent into the processing chamber. A chamber pressure may be maintained below about 100 kPa. The methods may also include wetting the plurality of features defined in the substrate.Type: GrantFiled: December 22, 2017Date of Patent: August 6, 2019Assignee: Applied Materials, Inc.Inventors: Paul McHugh, Bridger Hoerner, Marvin Bernt, Thomas H. Oberlitner, Brian Aegerter, Richard W. Plavidal, Andrew Anten, Adam McClure, Randy Harris
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Publication number: 20190122981Abstract: Processing methods may be performed to form a fan-out interconnect structure. The methods may include forming a semiconductor active device structure overlying a first substrate. The semiconductor active device structure may include first conductive contacts. The methods may include forming an interconnect structure overlying a second substrate. The interconnect structure may include second conductive contacts. The methods may also include joining the first substrate with the second substrate. The joining may include coupling the first conductive contacts with the second conductive contacts. The interconnect structure may extend beyond the lateral dimensions of the semiconductor active device structure.Type: ApplicationFiled: October 22, 2018Publication date: April 25, 2019Applicant: Applied Materials, Inc.Inventors: Richard W. Plavidal, Albert Lan
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Publication number: 20180182664Abstract: Methods of wetting a semiconductor substrate may include forming a controlled atmosphere in a processing chamber housing the semiconductor substrate. The semiconductor substrate may define a plurality of features, which may include vias. The methods may include flowing a wetting agent into the processing chamber. A chamber pressure may be maintained below about 100 kPa. The methods may also include wetting the plurality of features defined in the substrate.Type: ApplicationFiled: December 22, 2017Publication date: June 28, 2018Applicant: Applied Materials, Inc.Inventors: Paul McHugh, Bridger Hoerner, Marvin Bernt, Thomas H. Oberlitner, Brian Aegerter, Richard W. Plavidal, Andrew Anten, Adam McClure, Randy Harris
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Publication number: 20180144954Abstract: Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.Type: ApplicationFiled: November 15, 2017Publication date: May 24, 2018Applicant: Applied Materials, Inc.Inventors: Eric J. Bergman, John L. Klocke, Paul McHugh, Stuart Crane, Richard W. Plavidal
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Publication number: 20180019119Abstract: Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.Type: ApplicationFiled: July 14, 2017Publication date: January 18, 2018Applicant: Applied Materials Inc,Inventors: Eric J. Bergman, John L. Klocke, Paul McHugh, Stuart Crane, Richard W. Plavidal
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Publication number: 20140299162Abstract: Objects with complex surface profiles can be cleaned effectively using hyperbaric pressures. A high temperature high pressure liquid or vapor can be introduced to a sealed chamber containing an object to be cleaned, forming a thin liquid layer on the object. The pressure in the sealed chamber can be quickly reduced, evaporating the thin liquid layer, which can remove surface contaminants from the object. The process can be repeated until the object is cleaned.Type: ApplicationFiled: June 18, 2014Publication date: October 9, 2014Inventor: Richard W. Plavidal
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Publication number: 20140083462Abstract: A cyclic bubble generation and termination process can be used to effectively clean objects in a liquid. The bubbles can be generated from dissolved gas in the liquid during a pressurizing phase of the cyclic bubble process. Alternatively, the bubbles can be generated from as a by-product in a chemical reaction between chemicals in the liquid and material or chemicals at the surface of a part being processed. A vacuum process or a hyperbaric process can be used for cycling the pressure.Type: ApplicationFiled: September 25, 2013Publication date: March 27, 2014Applicant: Advanced Wet Technologies GmbHInventor: Richard W. Plavidal
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Publication number: 20130291901Abstract: Objects with complex surface profiles can be cleaned effectively using hyperbaric pressure. After partially submerging an object in a superheated liquid, the pressure of the vapor portion of the superheated liquid can be cycled. For example, a valve connected to the vapor portion of the superheated liquid can be opened to an ambient, such as atmospheric ambient to release the chamber pressure. The chamber pressure then can increased, for example, by re-equilibrium or by introducing superheated vapor or heated vapor or gas. During the release of pressure, bubbles can formed on the surface of the object. During the increase of the pressure, the bubbles can be collapsed. The cycling of the bubbles can clean the object surface.Type: ApplicationFiled: May 6, 2013Publication date: November 7, 2013Inventor: Richard W. Plavidal
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Publication number: 20130291902Abstract: Objects can be dried by a quick release of superheated vapor. After providing a superheated vapor to a chamber, the superheated vapor can be released. During the release of pressure, liquid droplets can be evaporated, drying the object.Type: ApplicationFiled: May 6, 2013Publication date: November 7, 2013Inventor: Richard W. Plavidal
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Publication number: 20130276822Abstract: Polysilicon granules can be cleaned, rinsed and dried by hyperbaric superheated liquid and superheated steam. The superheated liquid can be used to rinse and heating the polysilicon granules. A slow drain can be open to remove the superheated liquid. A fast drain then can be open, preferably to atmosphere, to allow steam to vent through bottom. The fast drain can function as a drying process, vaporizing water droplets down the drain with the escaping steam.Type: ApplicationFiled: April 18, 2013Publication date: October 24, 2013Applicant: Advanced Wet Technologies GmbHInventor: Richard W. Plavidal
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Publication number: 20130276823Abstract: Silicon plates can be cleaned, rinsed and dried by hyperbaric superheated liquid and superheated steam. The superheated liquid can be used to clean and rinse the silicon plates after being saw from a silicon block. A slow drain can be open to remove the superheated liquid. A fast drain then can be open, preferably to atmosphere, to allow steam to vent through bottom. The fast drain can function as a drying process, vaporizing water droplets down the drain with the escaping steam.Type: ApplicationFiled: April 24, 2013Publication date: October 24, 2013Applicant: Advanced Wet Technologies GmbHInventor: Richard W. Plavidal
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Publication number: 20130276819Abstract: A dynamic cyclic nucleation transport (D-CNX) process can be used to wet process an object, such as cleaning or etching. In the D-CNX process, the chamber volume is cyclically enlarged and reduced, effectively reducing and increasing the chamber pressure, respectively. During the pressure reduction phase, bubbles can be generated, which can be terminated or travel to the liquid surface during the pressure increment phase. The generation and termination of bubbles can clean or etch the object, even in hard to reach places.Type: ApplicationFiled: April 17, 2013Publication date: October 24, 2013Applicant: Advanced Wet Technologies GmbHInventor: Richard W. Plavidal