Abstract: X-ray imaging and classification of volume defects within a three-dimensional structure includes identifying one or more volume defects within a three-dimensional structure of a sample and acquiring, with a transmission-mode x-ray diffraction imaging tool, one or more coherent diffraction images of the one or more identified volume defects. The process includes classifying the one or more volume defects within a volume of the three-dimensional structure based on the one or more coherent diffraction images, and training an additional optical or electron-based inspection tool based on the one or more classified defects.

Abstract: X-ray imaging and classification of volume defects within a three-dimensional structure includes identifying one or more volume defects within a three-dimensional structure of a sample and acquiring, with a transmission-mode x-ray diffraction imaging tool, one or more coherent diffraction images of the one or more identified volume defects. The process includes classifying the one or more volume defects within a volume of the three-dimensional structure based on the one or more coherent diffraction images, and training an additional optical or electron-based inspection tool based on the one or more classified defects.

Abstract: Disclosed are methods and apparatus for generating a sub-200 nm continuous wave (cw) laser. A laser apparatus includes a chamber for receiving at least a rare gas or rare gas mixtures and a pump laser source for generating at least one cw pump laser focused in the chamber for generating at least one laser-sustained plasma in the chamber. The laser apparatus further includes a system for forming an optical cavity in which the at least one laser-sustained plasma serves as an excitation source for producing at least one cw laser having a wavelength that is below about 200 nm. In one aspect, the at least one laser-sustained plasma has a shape that substantially matches a shape of the optical cavity.

Abstract: A method of performing a hot test of a packaged phosphor converted light-emitting diode (pc-LED) includes selectively heating portions of the phosphor layer using a laser to provide a predetermined temperature gradient in the phosphor layer. The selective heating can directly heat the silicone in a silicone-based phosphor layer, or directly heat the active ion(s) of the phosphor in a Lumiramic™-based phosphor or even the active ion(s) of a silicone-based phosphor layer. A current is applied to the InGaN film to establish a predetermined temperature at the InGaN film junction, the film junction being adjacent to the phosphor layer. Photometric measurements are performed on the LED after the selective heating and during the applied electroluminescent current. This method quickly establishes the temperatures and temperature gradients in the LED consistent with those of an operating, product-level LED, thereby ensuring accurate binning of the LED.

Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.

Abstract: Solid state lighting devices (e.g., lamps and fixtures) are produced using unbinned/uncharacterized LEDs from an entire LED production “cloud” by way of sequentially measuring light emitted from the unbinned LEDs, and then assigning/placing each unbinned LED immediately into an associated LED product group (e.g., directly onto a PCB that forms part of the final lamp/fixture). The group assignment for each LED is based on how its measured light matches with other LEDs based on flexible group characteristics, which are generated in accordance with user-defined parameters, whereby each LED is placed in a product group such that light collectively generated by the LEDs of each product group complies with the user-defined parameters. The flexible group characteristics are also adjusted in real time (i.e., as batch-related characteristics of the LED “cloud” are acquired by way of the sequential testing), whereby the LED assignment process is modified for each LED batch.

Abstract: Disclosed are methods and apparatus for generating a sub-200 nm continuous wave (cw) laser. A laser apparatus includes a chamber for receiving at least a rare gas or rare gas mixtures and a pump laser source for generating at least one cw pump laser focused in the chamber for generating at least one laser-sustained plasma in the chamber. The laser apparatus further includes a system for forming an optical cavity in which the at least one laser-sustained plasma serves as an excitation source for producing at least one cw laser having a wavelength that is below about 200 nm. In one aspect, the at least one laser-sustained plasma has a shape that substantially matches a shape of the optical cavity.

Abstract: A method of performing a hot test of a packaged phosphor converted light-emitting diode (pc-LED) includes selectively heating portions of the phosphor layer using a laser to provide a predetermined temperature gradient in the phosphor layer. The selective heating can directly heat the silicone in a silicone-based phosphor layer, or directly heat the active ion(s) of the phosphor in a Lumiramic™-based phosphor or even the active ion(s) of a silicone-based phosphor layer. A current is applied to the InGaN film to establish a predetermined temperature at the InGaN film junction, the film junction being adjacent to the phosphor layer. Photometric measurements are performed on the LED after the selective heating and during the applied electroluminescent current. This method quickly establishes the temperatures and temperature gradients in the LED consistent with those of an operating, product-level LED, thereby ensuring accurate binning of the LED.

Abstract: A method of performing a hot test of a wafer-level, packaged high-brightness phosphor converted light-emitting diode (pc-HBLED) includes selectively heating portions of the phosphor layer using a laser to provide a predetermined temperature gradient in the phosphor layer. The selective heating can directly heat the silicone in a silicone-based phosphor layer, or directly heat the active ion(s) of the phosphor in a Lumiramic™-based phosphor or even the active ion(s) of a silicone-based phosphor layer. A current is applied to the InGaN film to establish a predetermined temperature at the InGaN film junction, the film junction being adjacent to the phosphor layer. Photometric measurements are performed on the HBLED after the selective heating and during the applied electroluminescent current. This method quickly establishes the temperatures and temperature gradients in the HBLED consistent with those of an operating, product-level HBLED, thereby ensuring accurate binning of the HBLED.

Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.

Abstract: A method of sustaining a plasma, by focusing a first wavelength of electromagnetic radiation into a gas within a volume, where the first wavelength is substantially absorbed by a first species of the gas and delivers energy into a first region of a plasma having a first size and a first temperature. A second wavelength of electromagnetic radiation is focused into the first region of the plasma, where the second wavelength is different than the first wavelength and is substantially absorbed by a second species of the gas and delivers energy into a second region of the plasma region within the first region of the plasma having a second size that is smaller than the first size and a second temperature that is greater than the first temperature.

Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.

Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.

Abstract: A wafer inspection system includes a laser droplet plasma (LDP) light source that generates light with sufficient radiance to enable bright field inspection at wavelengths down to 40 nanometers. Light generated by the LDP source is directed to the wafer and light from the illuminated wafer is collected by a high NA objective with all reflective elements. A detector detects the collected light for further image processing. The LDP source includes a droplet generator that dispenses droplets of a feed material. An excitation light generated by a laser is focused on a droplet of the feed material. The interaction of the excitation light with the droplet generates a plasma that emits illumination light with a radiance of at least 10 W/mm2-sr within a spectral range from 40 nanometers to 200 nanometers.

Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.

Abstract: A wafer inspection system includes a laser droplet plasma (LDP) light source that generates light with sufficient radiance to enable bright field inspection at wavelengths down to 40 nanometers. Light generated by the LDP source is directed to the wafer and light from the illuminated wafer is collected by a high NA objective with all reflective elements. A detector detects the collected light for further image processing. The LDP source includes a droplet generator that dispenses droplets of a feed material. An excitation light generated by a laser is focused on a droplet of the feed material. The interaction of the excitation light with the droplet generates a plasma that emits illumination light with a radiance of at least 10 W/mm2-sr within a spectral range from 40 nanometers to 200 nanometers.

Abstract: A method of generating a photoluminescence map for an indium gallium nitride (InGaN) well can include presenting data on a pixel by pixel basis. The data can be generated as a function of emission wavelength, line width of emission, polarization of emission, and intensity of emission. The data can also be generated as a function of excitation polarization and polarization angle orientation with respect to film crystalline axes of the InGaN well. The data can also be generated as a function of multiple wavelengths of light to generate the photoluminescence map. The photoluminescence maps can be correlated to device internal quantum efficiency as measured in test devices. The resulting correlation maps can serve as line monitors of indium rich InGaN wafers used for green LEDs.

Abstract: A method of sustaining a plasma, by focusing a first wavelength of electromagnetic radiation into a gas within a volume, where the first wavelength is substantially absorbed by a first species of the gas and delivers energy into a first region of a plasma having a first size and a first temperature. A second wavelength of electromagnetic radiation is focused into the first region of the plasma, where the second wavelength is different than the first wavelength and is substantially absorbed by a second species of the gas and delivers energy into a second region of the plasma region within the first region of the plasma having a second size that is smaller than the first size and a second temperature that is greater than the first temperature.

Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.

Abstract: The present invention provides an edge cladding for a slab laser, the edge cladding comprising a cooling channel system therein.