Abstract: A structure for doping of III-V compounds is provided. The structure is a multi-layered structure in which layers of dopant are alternated with layers of initially undoped III-V compound. Dopant diffuses from the layers of dopant into the layers of III-V compound. The structure does not facilitate the introduction of impurities into the III-V compound during the diffusion of the dopant.

Abstract: A structure for doping of III-V compounds is provided. The structure is a multi-layered structure in which layers of dopant are alternated with layers of initially undoped III-V compound. Dopant diffuses from the layers of dopant into the layers of III-V compound. The structure does not facilitate the introduction of impurities into the III-V compound during the diffusion of the dopant.

Abstract: A SAW (surface acoustic wave) device includes a substrate having thereon at least one apodized IDT (inter-digital transducer). The axis of the apodization pattern is inclined towards a driven conductive rail of the IDT at the ends of the pattern, whereby the driven end fingers have a low capacitive coupling to a ground plane on which the substrate is supported. The capacitive coupling to the ground plane may also be reduced by supporting the substrate on the ground plane via an insulating support, whereby an air gap or the insulating support decreases the capacitance between the IDT and the ground plane.

Abstract: A SAW device includes aligned IDTs (inter-digital transducers) with a continuous pattern of fingers between their front edges. Each IDT may be symmetrical about its center, and includes front and back edge reflection suppressing regions of fingers of successively decreasing length, which serve to suppress surface acoustic wave reflections at the respective edges. Optional shield regions between the two front edge suppressing regions, and between the back edge suppressing regions and acoustic absorbers, include fingers of successively increasing length complementary to and adjacent the fingers of successively decreasing length of the reflection suppressing regions. The IDTs may be apodized or unapodized, and each IDT may include dummy fingers between its active region and each reflection suppressing region.

Abstract: Each IDT (inter-digital transducer) of a SAW (surface acoustic wave) device is formed on a thin resistive doped silicon film having the same pattern as the IDT, which improves adhesion of the IDT to the substrate. The silicon film also constitutes electroacoustic absorbers between the IDTs and edges of the substrate, and can have a linearly tapered edge adjacent to each IDT to suppress reflections at the absorber boundary. The SAW device is formed by sputtering silicon onto the substrate, subsequently forming the IDTs, and then etching the silicon from areas where it is not wanted.

Abstract: Each IDT (inter-digital transducer) of a SAW (surface acoustic wave) device has a linearly tapered back edge formed by reflection-suppressing fingers of successively decreasing length spaced apart with a pitch of lambda/4 behind the active region of the IDT, where lambda is the wavelength of a SAW to be propagated, whereby SAW reflections at the back edge of the IDT are substantially eliminated. A thin resistive doped silicon film between the back edge of each IDT and the adjacent edge of the substrate absorbs waves propagated via this back edge. The film underlies the IDTs to provide improved adhesion to the substrate.

Abstract: A surface acoustic wave (SAW) device has an input interdigitated transducer (IDT) and an output IDT. One of the transducers is formed as two loops which are interconnected so that unwanted magnetic feedthrough voltages induced in or by such current loops cancel, while currents producing or produced by the SAW add.

Abstract: A matrix multiplexed field effect display has switch devices at matrix crosspoints to provide a turn-on threshold for the field effect material. The switch devices are thin film metal-insulator-metal (MIM) switches. The display is operated at low current so that the MIM switches, which may be deposited on glass, do not degrade rapidly in use.

Abstract: In known thin film switch controlled matrix multiplexed liquid crystal displays (LCD's), alternating pulses of an applied waveform are of reverse polarity. If the transient behaviour characteristic of the switches controlling the LCD is not saturated during application of a selection pulse, the selected pels may experience a relatively low RMS voltage in the ON state. To ensure that selected pels are fully turned on, the addressing waveform proposed consists of a series of pulses of one polarity followed by a corresponding series of pulses of opposite polarity. Transient effects are minimized by applying the series of unipolar pulses and the pels are consequently subjected to a high RMS voltage. However, net DC current through the LC is still zero as required in order to guard against irreversible electrochemical degradation of the LC. The higher RMS voltage can be used to improve contrast ratio or to increase the level of multiplexing.

Abstract: A matrix multiplexed display cell has thin film switch devices at matrix crosspoints to provide a turn-on threshold for electrooptic liquid used in the cell. Each of the switch devices has two parallel branches of diodes, the diodes in one branch being of reverse polarity to those in the other. The cell is operated at low current so that the switch devices, which are deposited on glass, do not degrade rapidly in use.

Abstract: A matrix multiplexed display cell has thin film switch devices at matrix crosspoints to provide a turn-on threshold for the electro-optic liquid used in the cell. Each of the switch devices is a back-to-back pair of diodes. The cell is operated at low current so that the switch devices, which are deposited on glass, do not degrade rapidly in use.