Abstract: A metal-ceramic substrate, to an electronic component comprising a metal-ceramic substrate, and to a method for producing a metal-ceramic substrate. The metal-ceramic substrate comprises: a) a ceramic body comprising a primary boundary surface, b) a metal layer comprising a primary boundary surface, wherein the metal layer is connected over its surface to the ceramic body, and wherein the metal layer comprises a structuring region which comprises (i) partially solid material and (ii) partially non-solid material, and c) a contact area, comprising silver, arranged on the metal layer, wherein in a cross-section through the metal-ceramic substrate perpendicular to the primary boundary surface of the ceramic body, the structuring region has a geometry as described in the patent.

Abstract: A method for structuring a metal-ceramic composite, comprising the following steps: providing a metal-ceramic composite containing a nitride ceramic substrate comprising a front side and a rear side, a metal coating on the front side of the nitride ceramic substrate, a reaction layer which is present between the metal coating and the ceramic substrate and contains one or more elements ERS selected from Ti, Hf, Zr, Nb, V, Ta, and Ce, removing the metal coating so that at least one recess is created in the metal coating and an exposed adhesion-promoting layer is present in the recess, removing the exposed reaction layer using a pulsed laser beam of an ultrashort pulse laser so that an exposed surface of the ceramic substrate is present in the recess, wherein the pulsed laser beam applies a total fluence of 50 J/cm2 to 650 J/cm2.

Abstract: A metal-ceramic composite containing a ceramic substrate comprising a front side and a rear side and containing silicon nitride, a metal coating on the front side of the ceramic substrate, wherein the metal coating has at least one recess, and a surface of the ceramic substrate is exposed by the recess, the ceramic substrate shows an Si2p signal in the range of 96 to 107 eV in an energy spectrum recorded by X-ray photoelectron spectroscopy (hereinafter also referred to as XPS spectrum), at least in the region of the recess, wherein the Si2p signal has the following: one or more peaks that each have a maximum in the range of 98.0 to 100.0 eV, one or more peaks that each have a maximum in the range of 101.0 to 102.2 eV, one or more peaks that each have a maximum in the range of 102.5 to 104.0 eV.

Abstract: A metal-ceramic composite containing a ceramic substrate comprising a front side and a rear side and containing ?-silicon nitride, and a metal coating on the front side of the ceramic substrate, wherein the metal coating comprises at least one recess, and a surface of the ceramic substrate is exposed by the recess.

Abstract: A metal-ceramic composite containing a ceramic substrate comprising a front side and a rear side and containing a silicon nitride, a metal coating present on the front side of the ceramic substrate, wherein the metal coating comprises at least one recess, and a surface of the ceramic substrate is exposed by the recess, wherein the surface of the ceramic substrate exposed by the recess has a stretched surface area ratio Sdr in accordance with the standard ILNAS-EN ISO 25178-2:2022 of at least 7.0%, wherein Sdr is determined by confocal microscopy.

Abstract: The present invention relates to a method for producing a metal-ceramic substrate. The method has the following steps: providing a stack containing a ceramic body, a metal foil, and a solder material in contact with the ceramic body and the metal foil, wherein the solder material has: a metal having a melting point of at least 700° C., a metal having a melting point of less than 700° C., and an active metal; and heating the stack, wherein at least one of the following conditions is satisfied: the high temperature heating duration is no more than 60 min; the peak temperature heating duration is no more than 30 min; the heating duration is no more than 60 min.

Abstract: The invention relates to a method for structuring metal-ceramic substrates and to a structured metal-ceramic substrate which can be used in particular in power electronics. In the method, a first metal-ceramic substrate and a second metal-ceramic substrate are etched, wherein, while being contacted with an etching solution that is capable of removing active metal from the bonding layer of the metal-ceramic substrates, the first metal-ceramic substrate and the second metal-ceramic substrate are positioned such that an orthogonal projection of the first metal-ceramic substrate onto a projection plane parallel to the metal layer of the first metal-ceramic substrate shades no more than 60% of the metal layer of the second metal-ceramic substrate.

Abstract: The present invention relates to a method for producing a metal-ceramic substrate. The method has the following steps: providing a stack containing a ceramic body, a metal foil, and a solder material in contact with the ceramic body and the metal foil, wherein the solder material has: a metal having a melting point of at least 700° C., a metal having a melting point of less than 700° C., and an active metal; and heating the stack, wherein at least one of the following conditions is satisfied: the high temperature heating duration is no more than 60 min; the peak temperature heating duration is no more than 30 min; the heating duration is no more than 60 min.

Abstract: The invention relates to a method for producing a metal-ceramic substrate and to a furnace suitable for carrying out the method. With the method, a metal-ceramic substrate with increased thermal and current conductivity can be obtained. The method comprises the steps of providing a stack containing a ceramic body, a metal foil, and a solder material in contact with the ceramic body and the metal foil, the solder material comprising a metal having a melting point of at least 700° C., a metal having a melting point of less than 700° C., and an active metal, and heating the stack, the stack passing through a heating zone for heating.

Abstract: The invention relates to a packaging unit for substrates, a packaging stack having packaging units of this type and a method for packaging substrates. The packaging unit for substrates comprises a first substrate, a spacer and a second substrate. The spacer is placed on the first substrate and the second substrate is placed on the spacer. A respective metal deposit is applied to a surface of the first substrate and to a surface of the second substrate and a respective adhesive point is arranged on the two metal deposits. The spacer is placed on the first substrate in such a way that the spacer is only in contact with the first substrate outside of the adhesive point. The spacer is bridge-shaped. At least the first substrate comprises a plurality of individual substrates arranged next to one another and the spacer borders the individual substrates.

Abstract: The present invention relates to a packaging unit for a substrate, a package stack with such packaging units and a process for packaging a substrate. The packaging unit for a substrate comprises a first shell, a substrate and a second shell. The substrate is inserted into the first shell, and the second shell is mounted on the first shell so that a first side of the substrate is surrounded by the first shell and an opposite, second side of the substrate is covered by the second shell. A metal deposit is applied to the second side of the substrate and an adhesive point is arranged on the metal deposit. The second shell is supported on the first shell in such a way that the second shell is only in contact with the substrate outside the adhesive point.

Abstract: One aspect relates to a method of processing metallized ceramic substrates and to a metal-ceramic substrate obtained by this method.