Patents by Inventor Richard Wen

Richard Wen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190376165
    Abstract: Provided herein are novel aluminum alloy compositions and methods of making and processing the same. The alloys described herein can be used in bottle making applications and exhibit enhanced runnability, formability, and appearance. The methods of producing an aluminum alloy sheet described herein can include casting an aluminum alloy to form an ingot, homogenizing the ingot, hot rolling the ingot to produce a hot band, and cold rolling the hot band to an aluminum alloy sheet of final gauge.
    Type: Application
    Filed: June 7, 2019
    Publication date: December 12, 2019
    Applicant: Novelis Inc.
    Inventors: Wei Wen, Yi Wang, Richard Hamerton, Adriano Manuel Povoa Ferreira, Babak Raeisinia, Zhuoru Wu, Sebastijan Jurendic, Vishwanath Hegadekatte, Carlos Nobrega
  • Patent number: 10463721
    Abstract: Provided are chimeric arginine deiminases, including pegylated chimeric arginine deiminases, and related compositions and methods of use thereof, including methods of treating cancer.
    Type: Grant
    Filed: March 18, 2015
    Date of Patent: November 5, 2019
    Assignee: TDW Group
    Inventors: Bor-Wen Wu, Robert Almassy, Wei He, Richard E. Showalter, Jiaojuan He, Yunyun Guo, James A. Thomson
  • Publication number: 20190300750
    Abstract: The compositions of the present disclosure polish surfaces or substrates that at least partially include ruthenium. The composition includes a synergistic combination of ammonia and oxygenated halogen compound. The composition may further include abrasive and acid(s). A polishing composition for use on ruthenium materials may include ammonia, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; hydrogen periodate, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; silica, present in an amount of 0.01 wt % to 12 wt %, based on the total weight of the composition; and organic sulfonic add, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition, wherein the pH of the composition is between 6 and 8.
    Type: Application
    Filed: March 12, 2019
    Publication date: October 3, 2019
    Inventors: David (Tawei) Lin, Bin Hu, Liqing (Richard) Wen
  • Publication number: 20190300749
    Abstract: A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.
    Type: Application
    Filed: March 11, 2019
    Publication date: October 3, 2019
    Inventors: David (Tawei) Lin, Bin Hu, Liqing (Richard) Wen
  • Patent number: 9735031
    Abstract: The present disclosure relates to polishing compositions that can polish Cobalt (Co) films in semiconductor substrates containing a multitude of films including Co, metals, metal oxides and dielectrics. These polishing compositions comprise an abrasive, a weak acid acting as a removal rate enhancer (RRE), a pH adjuster, and an azole-containing corrosion inhibitor (CI). The RRE, pH adjuster and CI have a pKa in the 1-18 range (1 (pKamin)<pKa<18 (pKamax)). The pKa values of the individual components are related to the pH of the polishing composition/slurry (pHslurry) by the following equation: pKamin+6<pHslurry<pKamax?6. The polishing composition also has less than about 100 parts per million (ppm) of sulfate ions and less than about 100 ppm of halide ions, and operates in the 7-12 pH range.
    Type: Grant
    Filed: September 17, 2015
    Date of Patent: August 15, 2017
    Assignee: FUJIFILM PLANAR SOLUTIONS, LLC
    Inventors: Luling Wang, Abhudaya Mishra, Deepak Mahulikar, Richard Wen
  • Patent number: 9735030
    Abstract: The present disclosure relates to polishing compositions that can polish Cobalt (Co) films in semiconductor substrates containing a multitude of films including Co, metals, metal oxides and dielectrics. These polishing compositions comprise an abrasive, a weak acid acting as a removal rate enhancer (RRE), a pH adjuster, and an azole-containing corrosion inhibitor (CI). The RRE, pH adjuster and CI have a pKa in the 1-18 range (1 (pKamin)<pKa<18 (pKamax)). The pKa values of the individual components are related to the pH of the polishing composition/slurry (pHslurry) by the following equation: pKamin+6<pHslurry<pKamax?6. The polishing composition also has less than about 100 parts per million (ppm) of sulfate ions and less than about 100 ppm of halide ions, and operates in the 7-12 pH range.
    Type: Grant
    Filed: September 5, 2014
    Date of Patent: August 15, 2017
    Assignee: FUJIFILM PLANAR SOLUTIONS, LLC
    Inventors: Luling Wang, Abhudaya Mishra, Deepak Mahulikar, Richard Wen
  • Publication number: 20160189976
    Abstract: The present disclosure relates to polishing compositions that can polish Cobalt (Co) films in semiconductor substrates containing a multitude of films including Co, metals, metal oxides and dielectrics. These polishing compositions comprise an abrasive, a weak acid acting as a removal rate enhancer (RRE), a pH adjuster, and an azole-containing corrosion inhibitor (CI). The RRE, pH adjuster and CI have a pKa in the 1-18 range (1 (pKamin)<pKa<18 (pKamax)). The pKa values of the individual components are related to the pH of the polishing composition/slurry (pHslurry) by the following equation: pKamin+6<pHslurry<pKamax?6. The polishing composition also has less than about 100 parts per million (ppm) of sulfate ions and less than about 100 ppm of halide ions, and operates in the 7-12 pH range.
    Type: Application
    Filed: September 17, 2015
    Publication date: June 30, 2016
    Inventors: Luling Wang, Abhudaya Mishra, Deepak Mahulikar, Richard Wen
  • Publication number: 20160068710
    Abstract: The present disclosure relates to polishing compositions that can polish Cobalt (Co) films in semiconductor substrates containing a multitude of films including Co, metals, metal oxides and dielectrics. These polishing compositions comprise an abrasive, a weak acid acting as a removal rate enhancer (RRE), a pH adjuster, and an azole-containing corrosion inhibitor (CI). The RRE, pH adjuster and CI have a pKa in the 1-18 range (1 (pKamin)<pKa<18 (pKamax)). The pKa values of the individual components are related to the pH of the polishing composition/slurry (pHslurry) by the following equation: pKamin+6<pHslurry<pKamax?6. The polishing composition also has less than about 100 parts per million (ppm) of sulfate ions and less than about 100 ppm of halide ions, and operates in the 7-12 pH range.
    Type: Application
    Filed: September 5, 2014
    Publication date: March 10, 2016
    Inventors: Luling Wang, Abhudaya Mishra, Deepak Mahulikar, Richard Wen
  • Patent number: 9190286
    Abstract: The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates.
    Type: Grant
    Filed: January 16, 2015
    Date of Patent: November 17, 2015
    Assignee: Fujifilm Planar Solutions, LLC
    Inventors: Bin Hu, Abhiskek Singh, Gert Moyaerts, Deepak Mahulikar, Richard Wen
  • Publication number: 20150132957
    Abstract: The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates.
    Type: Application
    Filed: January 16, 2015
    Publication date: May 14, 2015
    Inventors: Bin Hu, Abhiskek Singh, Gert Moyaerts, Deepak Mahulikar, Richard Wen
  • Patent number: 8961815
    Abstract: The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates.
    Type: Grant
    Filed: July 1, 2010
    Date of Patent: February 24, 2015
    Assignee: Planar Solutions, LLC
    Inventors: Bin Hu, Abhiskek Singh, Gert Moyaerts, Deepak Mahulikar, Richard Wen
  • Patent number: 8771540
    Abstract: The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.
    Type: Grant
    Filed: March 21, 2013
    Date of Patent: July 8, 2014
    Assignee: Fujifilm Planar Solutions, LLC
    Inventors: Hyungjun Kim, Richard Wen, Bin Hu, Minae Tanaka, Deepak Mahulikar
  • Publication number: 20130288478
    Abstract: The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.
    Type: Application
    Filed: March 21, 2013
    Publication date: October 31, 2013
    Inventors: Hyungjun Kim, Richard Wen, Bin Hu, Minae Tanaka, Deepak Mahulikar
  • Patent number: 8404143
    Abstract: The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.
    Type: Grant
    Filed: February 22, 2012
    Date of Patent: March 26, 2013
    Assignee: Fujifilm Planar Solutions, LLC
    Inventors: Hyungjun Kim, Richard Wen, Bin Hu, Minae Tanaka, Deepak Mahulikar
  • Publication number: 20120145951
    Abstract: The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.
    Type: Application
    Filed: February 22, 2012
    Publication date: June 14, 2012
    Inventors: Hyungjun Kim, Richard Wen, Bin Hu, Minae Tanaka, Deepak Mahulikar
  • Patent number: 8192644
    Abstract: The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.
    Type: Grant
    Filed: October 16, 2009
    Date of Patent: June 5, 2012
    Assignee: Fujifilm Planar Solutions, LLC
    Inventors: Hyungjun Kim, Richard Wen, Bin Hu, Minae Tanaka, Deepak Mahulikar
  • Publication number: 20120003901
    Abstract: The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates.
    Type: Application
    Filed: July 1, 2010
    Publication date: January 5, 2012
    Inventors: Bin Hu, Abhishek Singh, Gert Moyaerts, Deepak Mahulikar, Richard Wen
  • Publication number: 20110089143
    Abstract: The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.
    Type: Application
    Filed: October 16, 2009
    Publication date: April 21, 2011
    Inventors: Hyungjun Kim, Richard Wen, Bin Hu, Minae Tanaka, Deepak Mahulikar
  • Publication number: 20090053896
    Abstract: A water-soluble polymer is effective as a removal rate enhancer in a chemical mechanical polishing slurry to polish copper on semiconductor wafers or other copper laid structures, while keeping the etching rate low. The slurry may also include soft particles and certain metal chelating agents, or combinations thereof. The slurry can also comprise an abrasive particle, an organic acid, and an oxidizer.
    Type: Application
    Filed: August 7, 2008
    Publication date: February 26, 2009
    Inventors: Bin Hu, Richard Wen, Deepak Mahulikar
  • Patent number: D864782
    Type: Grant
    Filed: August 1, 2016
    Date of Patent: October 29, 2019
    Assignee: FITBIT, INC.
    Inventors: David Chia-Wen Lean, Vanvisa Attaset, Lukas Bielskis, Jose Roberto Melgoza, Prasith Sip, Jeremy Richard Martin, Jonah Avram Becker, Erik Keith Askin, Daniel Joseph Clifton, Gad Amit