Patents by Inventor Richard William Freer

Richard William Freer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Formation of a metalorganic compound for growing epitaxial semiconductor layers
    Patent number: 5980978
    Abstract: Semiconductor devices are prepared by growth of epitaxial layers on a substrate from metalorganic compounds of the formula MR.sub.3, R being an alkyl group, or its amine adduct. The metalorganic compound was prepared by reacting a Grignard reagent with a metal halide in an amine solvent.
    Type: Grant
    Filed: July 14, 1997
    Date of Patent: November 9, 1999
    Assignee: The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Northern Ireland of Defence Evaluation and Research Agency
    Inventors: Anthony Copeland Jones, Simon Andrew Rushworth, Trevor Martin, Timothy John Whittaker, Richard William Freer
  • Metalorganic compounds
    Patent number: 5886203
    Abstract: A process is provided for the production of metalorganic compounds by reacting a Grignard reagent with a Group II, Group III or Group V metal halide in a tertiary alkyl amine solvent to form a metalorganic adduct, isolating the adduct and dissociating the adduct to leave the metalorganic compound.
    Type: Grant
    Filed: July 14, 1997
    Date of Patent: March 23, 1999
    Assignee: Secretary of State For Defence Acting Through His Defence Evaluation & Research Agency
    Inventors: Anthony Copeland Jones, Simon Andrew Rushworth, Trevor Martin, Timothy John Whittaker, Richard William Freer