Patents by Inventor Richard Wise
Richard Wise has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145272Abstract: Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.Type: ApplicationFiled: October 5, 2023Publication date: May 2, 2024Inventors: Jengyi YU, Samantha S.H. TAN, Mohammed Haroon ALVI, Richard WISE, Yang PAN, Richard Alan GOTTSCHO, Adrien LAVOIE, Sivananda Krishnan KANAKASABAPATHY, Timothy William WEIDMAN, Qinghuang LIN, Jerome S. HUBACEK
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Publication number: 20240030031Abstract: Thin tin oxide films can be used in semiconductor device manufacturing. In one implementation, a method of processing a semiconductor substrate includes: providing a semiconductor substrate having a plurality of protruding features residing on an etch stop layer material, and an exposed tin oxide layer in contact with both the protruding features and the etch stop layer material, where the tin oxide layer covers both sidewalls and horizontal surfaces of the protruding features; and then completely removing the tin oxide layer from horizontal surfaces of the semiconductor substrate without completely removing the tin oxide layer residing at the sidewalls of the protruding features. Next, the protruding features can be removed without completely removing the tin oxide layer that resided at the sidewalls of the protruding features, thereby forming tin oxide spacers.Type: ApplicationFiled: October 6, 2023Publication date: January 25, 2024Inventors: David Charles Smith, Richard Wise, Arpan Mahorowala, Patrick A. Van Cleemput, Bart J. Van Schravendijk
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Patent number: 11784047Abstract: Thin tin oxide films can be used in semiconductor device manufacturing. In one implementation, a method of processing a semiconductor substrate includes: providing a semiconductor substrate having a plurality of protruding features residing on an etch stop layer material, and an exposed tin oxide layer in contact with both the protruding features and the etch stop layer material, where the tin oxide layer covers both sidewalls and horizontal surfaces of the protruding features; and then completely removing the tin oxide layer from horizontal surfaces of the semiconductor substrate without completely removing the tin oxide layer residing at the sidewalls of the protruding features. Next, the protruding features can be removed without completely removing the tin oxide layer that resided at the sidewalls of the protruding features, thereby forming tin oxide spacers.Type: GrantFiled: April 22, 2021Date of Patent: October 10, 2023Assignee: Lam Research CorporationInventors: David Charles Smith, Richard Wise, Arpan Pravin Mahorowala, Patrick A. van Cleemput, Bart J. van Schravendijk
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Publication number: 20230314946Abstract: The present disclosure relates to a film formed with a metal precursor and an organic precursor, as well as methods for forming and employing such films. The film can be employed as a photopatternable film or a radiation-sensitive film. In particular embodiments, the film includes alternating layers of metal-containing layers and organic layers. In other embodiments, the film includes a matrix of deposited metal and organic constituents.Type: ApplicationFiled: July 16, 2021Publication date: October 5, 2023Inventors: Eric Calvin Hansen, Timothy William Weidman, Chenghao Wu, Qinghuang Lin, Kyle Jordan Blakeney, Adrien LaVoie, Sivananda Krishnan Kanakasabapathy, Samantha S.H. Tan, Richard Wise, Yang Pan, Younghee Lee, Katie Lynn Nardi, Kevin Li Gu, Boris Volosskiy
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Publication number: 20230290657Abstract: Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.Type: ApplicationFiled: March 15, 2023Publication date: September 14, 2023Inventors: Jengyi Yu, Samantha S.H. Tan, Mohammed Haroon Alvi, Richard Wise, Yang Pan, Richard Alan Gottscho, Adrien LaVoie, Sivananda Krishnan Kanakasabapathy, Timothy William Weidman, Qinghuang Lin, Jerome S. Hubacek
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Publication number: 20230044691Abstract: A resealable beverage can lid has a lid having a top side having a score line forming a panel, a first rivet formed in the lid and extending outwardly from the top side of the lid, a second rivet formed in the panel and extending outwardly from the top side of the lid, and a tab portion comprising a main body portion having a rear lifting portion, a first forward rupturing portion, a second forward rupturing portion, an opening formed in the body portion for forming a tongue having a first aperture, a second aperture, the tab portion connected to the first rivet through the first aperture and the second rivet through the second aperture.Type: ApplicationFiled: October 19, 2022Publication date: February 9, 2023Inventors: Steven S. Schuver, Richard Wise
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Publication number: 20230045336Abstract: Methods for making thin-films on semiconductor substrates, may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.Type: ApplicationFiled: July 2, 2021Publication date: February 9, 2023Inventors: Jengyi Yu, Samantha S.H. Tan, Mohammed Haroon Alvi, Richard Wise, Yang Pan, Richard Alan Gottscho, Adrien LaVoie, Sivananda Krishnan Kanakasabapathy, Timothy William Weidman, Qinghuang Lin, Jerome S. Hubacek
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Publication number: 20220270877Abstract: A method of processing a substrate includes: providing a substrate having one or more mandrels comprising a mandrel material, wherein a layer of a spacer material coats horizontal surfaces and sidewalls of the one or more mandrels; and etching and completely removing the layer of the spacer material from the horizontal surfaces of the one or more mandrels and thereby exposing the mandrel material, without completely removing the spacer material residing at the sidewalls of the one or more mandrels. The etching includes exposing the substrate to a plasma formed using a mixture comprising a first gas and a polymer-forming gas, and wherein the etching comprises forming a polymer on the substrate. Polymer-forming gas may include carbon (C) and hydrogen (H).Type: ApplicationFiled: February 10, 2022Publication date: August 25, 2022Inventors: Jengyi Yu, Samantha S.H. Tan, Yu Jiang, Hui-Jung Wu, Richard Wise, Yang Pan, Nader Shamma, Boris Volosskiy
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Publication number: 20220216050Abstract: Provided herein are methods and systems for reducing roughness of an EUV resist and improving etched features. The methods involve descumming an EUV resist, filling divots of the EUV resist, and protecting EUV resists with a cap. The resulting EUV resist has smoother features and increased selectivity to an underlying layer, which improves the quality of etched features. Following etching of the underlying layer, the cap may be removed.Type: ApplicationFiled: April 14, 2020Publication date: July 7, 2022Applicant: Lam Research CorporationInventors: Jengyi Yu, Samantha S.H. Tan, Liu Yang, Chen-Wei Liang, Boris Volosskiy, Richard Wise, Yang Pan, Da Li, Ge Yuan, Andrew Liang
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Patent number: 11355353Abstract: Tin oxide films are used as mandrels in semiconductor device manufacturing. In one implementation the process starts by providing a substrate having a plurality of protruding tin oxide features (mandrels) residing on an exposed etch stop layer. Next, a conformal layer of spacer material is formed both on the horizontal surfaces and on the sidewalls of the mandrels. The spacer material is then removed from the horizontal surfaces exposing the tin oxide material of the mandrels, without fully removing the spacer material residing at the sidewalls of the mandrel (e.g., leaving at least 50%, such as at least 90% of initial height at the sidewall). Next, mandrels are selectively removed (e.g., using hydrogen-based etch chemistry), while leaving the spacer material that resided at the sidewalls of the mandrels. The resulting spacers can be used for patterning the etch stop layer and underlying layers.Type: GrantFiled: January 29, 2019Date of Patent: June 7, 2022Assignee: Lam Research CorporationInventors: Jengyi Yu, Samantha SiamHwa Tan, Seongjun Heo, Boris Volosskiy, Sivananda Krishnan Kanakasabapathy, Richard Wise, Yang Pan, Hui-Jung Wu
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Publication number: 20220165571Abstract: Tin oxide film on a semiconductor substrate is etched selectively with an etch selectivity of at least 10 in a presence of silicon (Si), carbon (C), or a carbon-containing material (e.g., photoresist) by exposing the substrate to a process gas comprising hydrogen (H2) and a hydrocarbon (e.g., at a hydrogen/hydrocarbon ratio of at least 5), such that a carbon-containing polymer is formed on the substrate. In some embodiments an apparatus for processing a semiconductor substrate includes a process chamber configured for housing the semiconductor substrate and a controller having program instructions on a non-transitory medium for causing selective etching of a tin oxide layer on a substrate in a presence of silicon, carbon, or a carbon-containing material by exposing the substrate to a plasma formed in a process gas that includes H2 and a hydrocarbon.Type: ApplicationFiled: February 10, 2022Publication date: May 26, 2022Inventors: Jengyi Yu, Samantha S.H. Tan, Yu Jiang, Hui-Jung Wu, Richard Wise, Yang Pan, Nader Shamma, Boris Volosskiy
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Patent number: 11322351Abstract: Tin oxide film on a semiconductor substrate is etched selectively in a presence of silicon (Si), carbon (C), or a carbon-containing material (e.g., photoresist) by exposing the substrate to a process gas comprising hydrogen (H2) and a hydrocarbon. The hydrocarbon significantly improves the etch selectivity. In some embodiments an apparatus for processing a semiconductor substrate includes a process chamber configured for housing the semiconductor substrate and a controller having program instructions on a non-transitory medium for causing selective etching of a tin oxide layer on a substrate in a presence of silicon, carbon, or a carbon-containing material by exposing the substrate to a plasma formed in a process gas that includes H2 and a hydrocarbon.Type: GrantFiled: November 18, 2019Date of Patent: May 3, 2022Assignee: Lam Research CorporationInventors: Jengyi Yu, Samantha S. H. Tan, Yu Jiang, Hui-Jung Wu, Richard Wise, Yang Pan, Nader Shamma, Boris Volosskiy
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Publication number: 20220122846Abstract: Methods and apparatuses for performing cycles of aspect ratio dependent deposition and aspect ratio independent etching on lithographically patterned substrates are described herein. Methods are suitable for reducing variation of feature depths and/or aspect ratios between features formed and partially formed by lithography, some partially formed features being partially formed due to stochastic effects. Methods and apparatuses are suitable for processing a substrate having a photoresist after extreme ultraviolet lithography. Some methods involve cycles of deposition by plasma enhanced chemical vapor deposition and directional etching by atomic layer etching.Type: ApplicationFiled: December 23, 2021Publication date: April 21, 2022Inventors: Nader Shamma, Richard Wise, Jengyi Yu, Samantha S.H. Tan
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Patent number: 11257674Abstract: Methods and apparatuses for performing cycles of aspect ratio dependent deposition and aspect ratio independent etching on lithographically patterned substrates are described herein. Methods are suitable for reducing variation of feature depths and/or aspect ratios between features formed and partially formed by lithography, some partially formed features being partially formed due to stochastic effects. Methods and apparatuses are suitable for processing a substrate having a photoresist after extreme ultraviolet lithography. Some methods involve cycles of deposition by plasma enhanced chemical vapor deposition and directional etching by atomic layer etching.Type: GrantFiled: August 31, 2020Date of Patent: February 22, 2022Assignee: Lam Research CorporationInventors: Nader Shamma, Richard Wise, Jengyi Yu, Samantha Tan
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Publication number: 20220005694Abstract: Thin tin oxide films are used as spacers in semiconductor device manufacturing. In one implementation, formation of spacers involves deposition of a tin oxide layer on a semiconductor substrate having multiple protruding features. The deposition is performed in a deposition apparatus having a controller with program instructions configured to cause sequential contacting of the semiconductor substrate with a tin-containing precursor and an oxygen-containing precursor such as to coat the semiconductor substrate having the protruding features with a tin oxide layer. Next, tin oxide film is removed from horizontal surfaces, without being completely removed from the sidewalls of the protruding features. Next, the material of protruding features is etched away, leaving tin oxide spacers on the semiconductor substrate.Type: ApplicationFiled: September 21, 2021Publication date: January 6, 2022Inventors: David Charles Smith, Richard Wise, Arpan Pravin Mahorowala, Patrick A. van Cleemput, Bart J. van Schravendijk
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Patent number: 11183383Abstract: Thin tin oxide films are used as spacers in semiconductor device manufacturing. In one implementation, thin tin oxide film is conformally deposited onto a semiconductor substrate having an exposed layer of a first material (e.g., silicon oxide or silicon nitride) and a plurality of protruding features comprising a second material (e.g., silicon or carbon). For example, 10-100 nm thick tin oxide layer can be deposited using atomic layer deposition. Next, tin oxide film is removed from horizontal surfaces, without being completely removed from the sidewalls of the protruding features. Next, the material of protruding features is etched away, leaving tin oxide spacers on the substrate. This is followed by etching the unprotected portions of the first material, without removal of the spacers. Next, underlying layer is etched, and spacers are removed. Tin-containing particles can be removed from processing chambers by converting them to volatile tin hydride.Type: GrantFiled: March 20, 2020Date of Patent: November 23, 2021Assignee: Lam Research CorporationInventors: David Charles Smith, Richard Wise, Arpan Mahorowala, Patrick van Cleemput, Bart J. van Schravendijk
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Publication number: 20210265163Abstract: Tin oxide film on a semiconductor substrate is etched selectively in a presence of photoresist by exposing the substrate to at least one of hydrogen-based chemistry and chlorine-based chemistry. In some implementations, a method of processing a semiconductor substrate starts by providing a semiconductor substrate having a patterned photoresist layer overlying a tin oxide layer. Next, openings are etched in the tin oxide layer using the patterned photoresist layer as a mask, and using at least one of a hydrogen-based etch chemistry and a chlorine-based etch chemistry. After the openings have been etched in the tin oxide layer, the photoresist layer is removed using an oxygen-based etch chemistry.Type: ApplicationFiled: May 13, 2021Publication date: August 26, 2021Inventors: Jengyi Yu, Samantha S.H. Tan, Yu Jiang, Hui-Jung Wu, Richard Wise, Yang Pan, Nader Shamma, Boris Volosskiy
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Publication number: 20210265173Abstract: Tin oxide films are used as mandrels in semiconductor device manufacturing. In one implementation the process starts by patterning a tin oxide layer using at least one of a hydrogen-based etch chemistry and a chlorine-based etch chemistry, and using patterned photoresist as a mask, thereby providing a substrate having a plurality of protruding tin oxide features (mandrels). Next, a conformal layer of spacer material is formed both on the horizontal surfaces and on the sidewalls of the mandrels. The spacer material is then removed from the horizontal surfaces exposing the tin oxide material of the mandrels, without fully removing the spacer material residing at the sidewalls of the mandrels. Next, mandrels are selectively removed (e.g., using hydrogen-based etch chemistry), while leaving the spacer material that resided at the sidewalls of the mandrels. The resulting spacers can be used for patterning underlying layers on the substrate.Type: ApplicationFiled: May 13, 2021Publication date: August 26, 2021Inventors: Jengyi Yu, Samantha S.H. Tan, Seongjun Heo, Boris Volosskiy, Sivananda Krishnan Kanakasabapathy, Richard Wise, Yang Pan, Hui-Jung Wu
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Publication number: 20210242019Abstract: Thin tin oxide films can be used in semiconductor device manufacturing. In one implementation, a method of processing a semiconductor substrate includes: providing a semiconductor substrate having a plurality of protruding features residing on an etch stop layer material, and an exposed tin oxide layer in contact with both the protruding features and the etch stop layer material, where the tin oxide layer covers both sidewalls and horizontal surfaces of the protruding features; and then completely removing the tin oxide layer from horizontal surfaces of the semiconductor substrate without completely removing the tin oxide layer residing at the sidewalls of the protruding features. Next, the protruding features can be removed without completely removing the tin oxide layer that resided at the sidewalls of the protruding features, thereby forming tin oxide spacers.Type: ApplicationFiled: April 22, 2021Publication date: August 5, 2021Inventors: David Charles Smith, Richard Wise, Arpan Pravin Mahorowala, Patrick A. van Cleemput, Bart J. van Schravendijk
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Patent number: 11031245Abstract: Thin tin oxide films are used as spacers in semiconductor device manufacturing. In one implementation, thin tin oxide film is conformally deposited onto a semiconductor substrate having an exposed layer of a first material (e.g., silicon oxide or silicon nitride) and a plurality of protruding features comprising a second material (e.g., silicon or carbon). For example, 10-100 nm thick tin oxide layer can be deposited using atomic layer deposition. Next, tin oxide film is removed from horizontal surfaces, without being completely removed from the sidewalls of the protruding features. Next, the material of protruding features is etched away, leaving tin oxide spacers on the substrate. This is followed by etching the unprotected portions of the first material, without removal of the spacers. Next, underlying layer is etched, and spacers are removed. Tin-containing particles can be removed from processing chambers by converting them to volatile tin hydride.Type: GrantFiled: September 22, 2017Date of Patent: June 8, 2021Assignee: Lan Research CorporationInventors: David Charles Smith, Richard Wise, Arpan Mahorowala, Patrick A. Van Cleemput, Bart J. van Schravendijk