Patents by Inventor Rick Deckbar

Rick Deckbar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11261096
    Abstract: A polymer inactivation method for a polycrystalline silicon manufacturing device, wherein the polymer byproducts are treated and additionally treated in a manner that controls the rate of reaction. The polymer byproducts are treated with a first inert gas under partial vacuum and a second oxygen containing gas to convert the polymer byproducts. The reaction rate can be controlled by regulating the fill pressure of reactant gas, controlling the amount of oxygen in the reactant gas, and stripping of the raw polymer with heat and or a vacuum. The solid byproduct remaining after treating the polymer, which is predominately silicon suboxides (SiOx) and silicon dioxide (SiO2), is inert and is easily removed.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: March 1, 2022
    Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), MITSUBISHI MATERIALS CORPORATION
    Inventors: Matthias Colomb, Rick Deckbar, Bryan Nettles
  • Publication number: 20190002296
    Abstract: A polymer inactivation method for a polycrystalline silicon manufacturing device, wherein the polymer byproducts are treated in a manner that controls the rate of reaction.
    Type: Application
    Filed: June 29, 2018
    Publication date: January 3, 2019
    Inventors: Matthias Colomb, Rick Deckbar, Bryan Nettles
  • Patent number: 9758384
    Abstract: The present invention relates to internals useful for minimizing bubble size in a bubbling fluidized bed reactor. One use for the invention is in an apparatus and method for producing trichlorosilane in which metallurgical grade silicon is reacted with hydrogen chloride gas and while being fluidized by the hydrogen chloride gas, thereby producing trichlorosilane.
    Type: Grant
    Filed: December 1, 2014
    Date of Patent: September 12, 2017
    Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), MITSUBISHI MATERIALS CORPORATION
    Inventors: Bryan Nettles, Matthias Colomb, Rick Deckbar
  • Publication number: 20160152482
    Abstract: The present invention relates to internals useful for minimizing bubble size in a bubbling fluidized bed reactor. One use for the invention is in an apparatus and method for producing trichlorosilane in which metallurgical grade silicon is reacted with hydrogen chloride gas and while being fluidized by the hydrogen chloride gas, thereby producing trichlorosilane.
    Type: Application
    Filed: December 1, 2014
    Publication date: June 2, 2016
    Inventors: Bryan Nettles, Matthias Colomb, Rick Deckbar
  • Patent number: 8945474
    Abstract: This invention is a heater used to heat the feed process gas from 450° C. to greater than about 600° C. for the fluidized bed reactor (FBR) used for conversion of silicon tetrachloride (STC) to trichlorosilane (TCS). The invention involves stacked heater element carbon plates. The design of the plates allow the plates to act as baffles which improve heat transfer to the feed gas. Also, the heat gradients across each plate is calculated to be approximately 100° C. which is much lower than the gradient seen by conventional vertical heater elements. The design of the present invention prevents electrical grounding. In the design, the elements are surrounded by graphite wrapped in carbon felt to prevent heat loss by radiation and conduction.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: February 3, 2015
    Assignees: Mitsubishi Polycrystaline Silicon America Corporation (MIPSA), Mitsubishi Materials Corporation
    Inventors: Matthias Colomb, Rick Deckbar, Wesley Teichmiller, Bryan Nettles