Abstract: To make a grating substructure in semiconductor material for use in a DFB laser, a first layer of semiconductor material is doped at a first doping concentration. A second layer of the semiconductor material is formed over the first layer. The second layer is doped higher concentration than the first layer and sufficiently different to change the refractive index of the semiconductor material. A third layer doped at a concentration comparable with the first layer is formed over the second layer. An etch is performed through a mask to form spaced etched regions extending at least through the second and third layers. Then a further layer of the semiconductor material doped at a doping concentration comparable the first and third layers is overgrown on the wafer.

Abstract: A self-aligned laser structure with an integral active and guiding layer is disclosed. It is comprised of a continuous active region and a current blocking region forming a lateral waveguide. The blocking region has an index of refraction n1 and a continuous guiding layer has an index of refraction n2, wherein n2 is greater than n1. The guiding layer and the blocking region is made of the same material. The blocking region has a real refractive index step to form a transverse optical mode, wherein the transverse laser mode is controlled by a change in doping level of the blocking region.