Patents by Inventor Rick KUSTRA
Rick KUSTRA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230343586Abstract: Embodiments of the present disclosure generally relate to methods for cleaning a chamber comprising introducing a gas to a processing volume of the chamber, providing a first radiofrequency (RF) power having a first frequency of about 40 MHz or greater to a lid of the chamber, providing a second RF power having a second frequency to an electrode disposed in a substrate support within the processing volume, and removing at least a portion of a film disposed on a surface of a chamber component of the chamber. The second frequency is about 10 MHz to about 20 MHz.Type: ApplicationFiled: June 27, 2023Publication date: October 26, 2023Applicant: Applied Materials, Inc.Inventors: Anup Kumar SINGH, Rick KUSTRA, Vinayak Vishwanath HASSAN, Bhaskar KUMAR, Krishna NITTALA, Pramit MANNA, Kaushik ALAYAVALLI, Ganesh BALASUBRAMANIAN
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Patent number: 11721545Abstract: Embodiments of the present disclosure generally relate to methods of depositing carbon film layers greater than 3,000 ? in thickness over a substrate and surface of a lid of a chamber using dual frequency, top, sidewall and bottom sources. The method includes introducing a gas to a processing volume of a chamber. A first radiofrequency (RF) power is provided having a first frequency of about 40 MHz or greater to a lid of the chamber. A second RF power is provided having a second frequency to a bias electrode disposed in a substrate support within the processing volume. The second frequency is about 10 MHz to about 40 MHz. An additional third RF power is provided having lower frequency of about 400 kHz to about 2 MHz to the bias electrode.Type: GrantFiled: September 28, 2020Date of Patent: August 8, 2023Assignee: Applied Materials, Inc.Inventors: Anup Kumar Singh, Rick Kustra, Vinayak Vishwanath Hassan, Bhaskar Kumar, Krishna Nittala, Pramit Manna, Kaushik Comandoor Alayavalli, Ganesh Balasubramanian
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Patent number: 11495454Abstract: Examples of the present technology include semiconductor processing methods to form boron-containing materials on substrates. Exemplary processing methods may include delivering a deposition precursor that includes a boron-containing precursor to a processing region of a semiconductor processing chamber. A plasma may be formed from the deposition precursor within the processing region of the semiconductor processing chamber. The methods may further include depositing a boron-containing material on a substrate disposed within the processing region of the semiconductor processing chamber, where the substrate is characterized by a temperature of less than or about 50° C. The as-deposited boron-containing material may be characterized by a surface roughness of less than or about 2 nm, and a stress level of less-than or about ?500 MPa. In some embodiments, a layer of the boron-containing material may function as a hardmask.Type: GrantFiled: August 7, 2020Date of Patent: November 8, 2022Assignee: Applied Materials, Inc.Inventors: Huiyuan Wang, Rick Kustra, Bo Qi, Abhijit Basu Mallick, Kaushik Alayavalli, Jay D. Pinson
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Publication number: 20220349050Abstract: Embodiments of the present disclosure generally relate a process chamber including a lid and a chamber body coupled to the lid. The chamber body and lid define a process volume and a coupling ring is disposed within the chamber body and below the lid. The coupling ring is coupled to ground or is coupled to a coupling RF power source. A substrate support is disposed and movable within the process volume.Type: ApplicationFiled: April 25, 2022Publication date: November 3, 2022Inventors: Rick KUSTRA, Kaushik Comandoor ALAYAVALLI, Jay D. PINSON, II, Sathya Swaroop GANTA, Anup Kumar SINGH
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Publication number: 20220319841Abstract: Examples of the present technology include semiconductor processing methods that provide a substrate in a substrate processing region of a substrate processing chamber, where the substrate is maintained at a temperature less than or about 50° C. A plasma may be generated from the hydrocarbon-containing precursor, and a carbon-containing material may be deposited from the plasma on the substrate. The carbon-containing material may include diamond-like-carbon, and may have greater than or about 60% of the carbon atoms with sp3 hybridized bonds.Type: ApplicationFiled: June 23, 2022Publication date: October 6, 2022Applicant: Applied Materials, Inc.Inventors: Huiyuan Wang, Rick Kustra, Bo Qi, Abhijit Basu Mallick, Kaushik Alayavalli, Jay D. Pinson
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Patent number: 11404263Abstract: Examples of the present technology include semiconductor processing methods that provide a substrate in a substrate processing region of a substrate processing chamber, where the substrate is maintained at a temperature less than or about 50° C. An inert precursor and a hydrocarbon-containing precursor may be flowed into the substrate processing region of the substrate processing chamber, where a flow rate ratio of the inert precursor to the hydrocarbon-containing precursor may be greater than or about 10:1. A plasma may be generated from the inert precursor and the hydrocarbon-containing precursor, and a carbon-containing material may be deposited from the plasma on the substrate. The carbon-containing material may include diamond-like-carbon, and may have greater than or about 60% of the carbon atoms with sp3 hybridized bonds.Type: GrantFiled: August 7, 2020Date of Patent: August 2, 2022Assignee: Applied Materials, Inc.Inventors: Huiyuan Wang, Rick Kustra, Bo Qi, Abhijit Basu Mallick, Kaushik Alayavalli, Jay D. Pinson
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Publication number: 20220102141Abstract: Embodiments of the present disclosure generally relate to methods of depositing carbon film layers greater than 3,000 ? in thickness over a substrate and surface of a lid of a chamber using dual frequency, top, sidewall and bottom sources. The method includes introducing a gas to a processing volume of a chamber. A first radiofrequency (RF) power is provided having a first frequency of about 40 MHz or greater to a lid of the chamber. A second RF power is provided having a second frequency to a bias electrode disposed in a substrate support within the processing volume. The second frequency is about 10 MHz to about 40 MHz. An additional third RF power is provided having lower frequency of about 400 kHz to about 2 MHz to the bias electrode.Type: ApplicationFiled: September 28, 2020Publication date: March 31, 2022Inventors: Anup Kumar SINGH, Rick KUSTRA, Vinayak Vishwanath HASSAN, Bhaskar KUMAR, Krishna NITTALA, Pramit MANNA, Kaushik Comandoor ALAYAVALLI, Ganesh BALASUBRAMANIAN
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Publication number: 20220093436Abstract: A process chamber is provided including a chamber body enclosing an inner volume; a substrate support disposed in the inner volume; an electrode disposed above the substrate support; and an actuator configured to move the electrode in the process chamber to change a distance between the electrode and the substrate support.Type: ApplicationFiled: September 22, 2020Publication date: March 24, 2022Inventor: Rick KUSTRA
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Publication number: 20220064797Abstract: A lid for a process chamber includes a plate having a first surface and a second surface opposite the first surface. The first surface has a recess and a seal groove formed in the first surface and surrounding the recess. The lid further includes an array of holes extending from the recess to the second surface.Type: ApplicationFiled: August 16, 2021Publication date: March 3, 2022Inventors: Akshay DHANAKSHIRUR, Juan Carlos ROCHA-ALVAREZ, Kaushik Comandoor ALAYAVALLI, Jay D. PINSON, II, Rick KUSTRA, Badri N. RAMAMURTHI, Anup Kumar SINGH, Ganesh BALASUBRAMANIAN, Bhaskar KUMAR, Vinayak Vishwanath HASSAN, Canfeng LAI, Kallol BERA, Sathya Swaroop GANTA
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Publication number: 20220044927Abstract: Examples of the present technology include semiconductor processing methods to form boron-containing materials on substrates. Exemplary processing methods may include delivering a deposition precursor that includes a boron-containing precursor to a processing region of a semiconductor processing chamber. A plasma may be formed from the deposition precursor within the processing region of the semiconductor processing chamber. The methods may further include depositing a boron-containing material on a substrate disposed within the processing region of the semiconductor processing chamber, where the substrate is characterized by a temperature of less than or about 50° C. The as-deposited boron-containing material may be characterized by a surface roughness of less than or about 2 nm, and a stress level of less-than or about ?500 MPa. In some embodiments, a layer of the boron-containing material may function as a hardmask.Type: ApplicationFiled: August 7, 2020Publication date: February 10, 2022Applicant: Applied Materials, Inc.Inventors: Huiyuan Wang, Rick Kustra, Bo Qi, Abhijit Basu Mallick, Kaushik Alayavalli, Jay D. Pinson
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Publication number: 20220044926Abstract: Examples of the present technology include semiconductor processing methods that provide a substrate in a substrate processing region of a substrate processing chamber, where the substrate is maintained at a temperature less than or about 50° C. An inert precursor and a hydrocarbon-containing precursor may be flowed into the substrate processing region of the substrate processing chamber, where a flow rate ratio of the inert precursor to the hydrocarbon-containing precursor may be greater than or about 10:1. A plasma may be generated from the inert precursor and the hydrocarbon-containing precursor, and a carbon-containing material may be deposited from the plasma on the substrate. The carbon-containing material may include diamond-like-carbon, and may have greater than or about 60% of the carbon atoms with sp3 hybridized bonds.Type: ApplicationFiled: August 7, 2020Publication date: February 10, 2022Applicant: Applied Materials, Inc.Inventors: Huiyuan Wang, Rick Kustra, Bo Qi, Abhijit Basu Mallick, Kaushik Alayavalli, Jay D. Pinson
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Publication number: 20210384015Abstract: Embodiments of the present disclosure generally relate to clean methods for processing chambers, and more specifically relate to plasma clean methods for removing carbon films from surfaces within the processing chamber. A method for cleaning includes introducing a cleaning gas into a processing region within a processing chamber, where interior surfaces of the processing chamber have a coating containing amorphous carbon. The cleaning gas contains oxygen gas and a noble gas. The method also includes generating an ion coupled plasma (ICP) from the cleaning gas within an upper portion of the processing region and generating a bias across a substrate support in a lower portion of the processing region. The method further includes exposing the amorphous carbon to atomic oxygen ions produced from the oxygen gas and the ICP and removing the amorphous carbon from the interior surfaces with the atomic oxygen ions during a cleaning process.Type: ApplicationFiled: June 9, 2020Publication date: December 9, 2021Inventors: Huiyuan WANG, Rick KUSTRA, Kaushik ALAYAVALLI, Eswaranand VENKATASUBRAMANIAN, Jay D. PINSON, II, Abhijit B. MALLICK