Patents by Inventor Rick Mauritzson
Rick Mauritzson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10403659Abstract: Implementations of image sensors may include a first die including an image sensor array and a first plurality of interconnects where the image sensor array includes a plurality of photodiodes and a plurality of transfer gates. The image sensor array may also include a second die including a second plurality of interconnects and a plurality of capacitors, each capacitor selected from the group consisting of deep trench capacitors, metal-insulator-metal (MIM) capacitors, polysilicon-insulator-polysilicon (PIP) capacitors, and 3D stacked capacitors. The first die may be coupled to the second die through the first plurality of interconnects and through the second plurality of interconnects. No more than eight photodiodes of the plurality of photodiodes of the first die may be electrically coupled with no more than four capacitors of the plurality of capacitors.Type: GrantFiled: August 29, 2018Date of Patent: September 3, 2019Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jeffrey Peter Gambino, Angel Rodriguez, David T. Price, Jeffery Allen Neuls, Kenneth Andrew Bates, Rick Mauritzson
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Publication number: 20190043903Abstract: Implementations of image sensors may include a first die including an image sensor array and a first plurality of interconnects where the image sensor array includes a plurality of photodiodes and a plurality of transfer gates. The image sensor array may also include a second die including a second plurality of interconnects and a plurality of capacitors, each capacitor selected from the group consisting of deep trench capacitors, metal-insulator-metal (MIM) capacitors, polysilicon-insulator-polysilicon (PIP) capacitors, and 3D stacked capacitors. The first die may be coupled to the second die through the first plurality of interconnects and through the second plurality of interconnects. No more than eight photodiodes of the plurality of photodiodes of the first die may be electrically coupled with no more than four capacitors of the plurality of capacitors.Type: ApplicationFiled: August 29, 2018Publication date: February 7, 2019Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jeffrey Peter GAMBINO, Angel RODRIGUEZ, David T. PRICE, Jeffery Allen NEULS, Kenneth Andrew BATES, Rick MAURITZSON
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Patent number: 10090342Abstract: Implementations of image sensors may include a first die including an image sensor array and a first plurality of interconnects where the image sensor array includes a plurality of photodiodes and a plurality of transfer gates. The image sensor array may also include a second die including a second plurality of interconnects and a plurality of capacitors, each capacitor selected from the group consisting of deep trench capacitors, metal-insulator-metal (MIM) capacitors, polysilicon-insulator-polysilicon (PIP) capacitors, and 3D stacked capacitors. The first die may be coupled to the second die through the first plurality of interconnects and through the second plurality of interconnects. No more than eight photodiodes of the plurality of photodiodes of the first die may be electrically coupled with no more than four capacitors of the plurality of capacitors.Type: GrantFiled: August 1, 2017Date of Patent: October 2, 2018Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jeffrey Peter Gambino, Angel Rodriguez, David T. Price, Jeffery Allen Neuls, Kenneth Andrew Bates, Rick Mauritzson
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Patent number: 7852385Abstract: An imager having optically and electrically black reference pixels in each row of the imager's pixel array. Since the reference pixels of each row experience the same row-wise noise as active imaging pixels in the associated row, the signals from the reference pixels are used to cancel out row-wise noise from the row of imaging pixels. The reference pixels are designed such that their photosensors are physically or effectively removed from the row-wise noise correction, thus rendering them electrically black or dark. As such, the reference pixels can be used to provide row-wise noise correction without the adverse effects of warm and hot pixels.Type: GrantFiled: October 6, 2009Date of Patent: December 14, 2010Assignee: Micron Technology, Inc.Inventor: Rick Mauritzson
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Patent number: 7701493Abstract: An imager having optically and electrically black reference pixels in each row of the imager's pixel array. Since the reference pixels of each row experience the same row-wise noise as active imaging pixels in the associated row, the signals from the reference pixels are used to cancel out row-wise noise from the row of imaging pixels. The reference pixels are designed such that their photosensors are physically or effectively removed from the row-wise noise correction, thus rendering them electrically black or dark. As such, the reference pixels can be used to provide row-wise noise correction without the adverse effects of warm and hot pixels.Type: GrantFiled: February 28, 2005Date of Patent: April 20, 2010Assignee: Micron Technology, Inc.Inventor: Rick Mauritzson
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Publication number: 20100020213Abstract: An imager having optically and electrically black reference pixels in each row of the imager's pixel array. Since the reference pixels of each row experience the same row-wise noise as active imaging pixels in the associated row, the signals from the reference pixels are used to cancel out row-wise noise from the row of imaging pixels. The reference pixels are designed such that their photosensors are physically or effectively removed from the row-wise noise correction, thus rendering them electrically black or dark. As such, the reference pixels can be used to provide row-wise noise correction without the adverse effects of warm and hot pixels.Type: ApplicationFiled: October 6, 2009Publication date: January 28, 2010Inventor: Rick Mauritzson
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Publication number: 20080266435Abstract: A method of operating an imager pixel that includes the act of applying a relatively small voltage on the gate of a transfer transistor during a charge acquisition period. If a small positive voltage is applied, a depletion region is created under the transfer transistor gate, which creates a path for dark current electrons to be transferred to a pixel floating diffusion region. The dark electrons are subsequently removed by a pixel reset operation. If a small negative voltage is applied to the transfer gate, electrons that would normally create dark current problems will instead recombine with holes thereby substantially reducing dark current.Type: ApplicationFiled: May 27, 2008Publication date: October 30, 2008Inventors: Gennadiy Agranov, Xiangli Li, Peter Parker Altice, Rick Mauritzson
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Patent number: 7378635Abstract: A method of operating an imager pixel that includes the act of applying a relatively small voltage on the gate of a transfer transistor during a charge acquisition period. If a small positive voltage is applied, a depletion region is created under the transfer transistor gate, which creates a path for dark current electrons to be transferred to a pixel floating diffusion region. The dark electrons are subsequently removed by a pixel reset operation. If a small negative voltage is applied to the transfer gate, electrons that would normally create dark current problems will instead recombine with holes thereby substantially reducing dark current.Type: GrantFiled: February 11, 2005Date of Patent: May 27, 2008Assignee: Micron Technology, Inc.Inventors: Gennadiy Agranov, Xiangli Li, Peter Parker Altice, Rick Mauritzson
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Publication number: 20070188642Abstract: A method of operating an imager pixel that includes the act of applying a relatively small voltage on the gate of a transfer transistor during a charge acquisition period. If a small positive voltage is applied, a depletion region is created under the transfer transistor gate, which creates a path for dark current electrons to be transferred to a pixel floating diffusion region. The dark electrons are subsequently removed by a pixel reset operation. If a small negative voltage is applied to the transfer gate, electrons that would normally create dark current problems will instead recombine with holes thereby substantially reducing dark current.Type: ApplicationFiled: April 19, 2007Publication date: August 16, 2007Inventors: Gennadiy Agranov, Xiangli Li, Peter Altice, Rick Mauritzson
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Publication number: 20060192864Abstract: An imager having optically and electrically black reference pixels in each row of the imager's pixel array. Since the reference pixels of each row experience the same row-wise noise as active imaging pixels in the associated row, the signals from the reference pixels are used to cancel out row-wise noise from the row of imaging pixels. The reference pixels are designed such that their photosensors are physically or effectively removed from the row-wise noise correction, thus rendering them electrically black or dark. As such, the reference pixels can be used to provide row-wise noise correction without the adverse effects of warm and hot pixels.Type: ApplicationFiled: February 28, 2005Publication date: August 31, 2006Inventor: Rick Mauritzson
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Publication number: 20060180741Abstract: A method of operating an imager pixel that includes the act of applying a relatively small voltage on the gate of a transfer transistor during a charge acquisition period. If a small positive voltage is applied, a depletion region is created under the transfer transistor gate, which creates a path for dark current electrons to be transferred to a pixel floating diffusion region. The dark electrons are subsequently removed by a pixel reset operation. If a small negative voltage is applied to the transfer gate, electrons that would normally create dark current problems will instead recombine with holes thereby substantially reducing dark current.Type: ApplicationFiled: February 11, 2005Publication date: August 17, 2006Inventors: Gennadiy Agranov, Xiangli Li, Peter Altice, Rick Mauritzson