Patents by Inventor Rick Snyder

Rick Snyder has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9576920
    Abstract: A semiconductor structure is disclosed. The semiconductor structure includes an electrically conductive layer disposed over a substrate. A moisture barrier layer is disposed over the substrate and between the substrate and the electrically conductive layer. A dielectric layer is disposed over the moisture barrier layer. The dielectric layer has an elastic modulus that is lower than an elastic modulus of the moisture barrier layer.
    Type: Grant
    Filed: July 25, 2016
    Date of Patent: February 21, 2017
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Jonathan Abrokwah, Forest Dixon, Thomas Dungan, Greg Halac, Rick Snyder
  • Patent number: 9508661
    Abstract: A semiconductor structure is disclosed. The semiconductor structure includes an electrically conductive layer disposed over a substrate. A moisture barrier layer is disposed over the substrate and between the substrate and the electrically conductive layer. A dielectric layer is disposed over the moisture barrier layer. The dielectric layer has an elastic modulus that is lower than an elastic modulus of the moisture barrier layer.
    Type: Grant
    Filed: July 17, 2014
    Date of Patent: November 29, 2016
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Jonathan Abrokwah, Forest Dixon, Thomas Dungan, Greg Halac, Rick Snyder
  • Publication number: 20160336284
    Abstract: A semiconductor structure is disclosed. The semiconductor structure includes an electrically conductive layer disposed over a substrate. A moisture barrier layer is disposed over the substrate and between the substrate and the electrically conductive layer. A dielectric layer is disposed over the moisture barrier layer. The dielectric layer has an elastic modulus that is lower than an elastic modulus of the moisture barrier layer.
    Type: Application
    Filed: July 25, 2016
    Publication date: November 17, 2016
    Inventors: Jonathan Abrokwah, Forest Dixon, Thomas Dungan, Greg Halac, Rick Snyder
  • Publication number: 20160020179
    Abstract: A semiconductor structure is disclosed. The semiconductor structure includes an electrically conductive layer disposed over a substrate. A moisture barrier layer is disposed over the substrate and between the substrate and the electrically conductive layer. A dielectric layer is disposed over the moisture barrier layer. The dielectric layer has an elastic modulus that is lower than an elastic modulus of the moisture barrier layer.
    Type: Application
    Filed: July 17, 2014
    Publication date: January 21, 2016
    Inventors: Jonathan Abrokwah, Forest Dixon, Thomas Dungan, Greg Halac, Rick Snyder
  • Patent number: 8946877
    Abstract: A semiconductor package comprises: a substrate comprising a semiconductor device; a cap comprising a seal ring disposed over a surface of the cap; and a gap between the substrate and the surface of the cap. The seal ring comprises a tread comprising at least two columns.
    Type: Grant
    Filed: September 29, 2010
    Date of Patent: February 3, 2015
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Rick Snyder, Joel Philliber
  • Patent number: 8587391
    Abstract: In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; and a single-material acoustic coupling layer disposed between the first and second BAW resonators, the acoustic coupling layer having an acoustic impedance less than approximately 6.0 MRayls and an acoustic attenuation less than approximately 1000 dB/cm.
    Type: Grant
    Filed: February 23, 2010
    Date of Patent: November 19, 2013
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Steve Gilbert, Rick Snyder, John D. Larson, III, Phil Nikkel
  • Publication number: 20120074555
    Abstract: A semiconductor package comprises: a substrate comprising a semiconductor device; a cap comprising a seal ring disposed over a surface of the cap; and a gap between the substrate and the surface of the cap. The seal ring comprises a tread comprising at least two columns.
    Type: Application
    Filed: September 29, 2010
    Publication date: March 29, 2012
    Applicant: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
    Inventors: Rick Snyder, Joel Philliber
  • Publication number: 20110204996
    Abstract: In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; and a single-material acoustic coupling layer disposed between the first and second BAW resonators, the acoustic coupling layer having an acoustic impedance less than approximately 6.0 MRayls and an acoustic attenuation less than approximately 1000 dB/cm.
    Type: Application
    Filed: February 23, 2010
    Publication date: August 25, 2011
    Applicant: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
    Inventors: Steve Gilbert, Rick Snyder, John D. Larson, III, Phil Nikkel
  • Publication number: 20110198273
    Abstract: A multi-stage drain filter insert (10) comprises a first basket (14) installed in a drain (D) inlet (I). A second basket (20) fits inside the first basket and is installed therewith for debris in the water flowing into the insert to be collected in a bottom of the second basket. An absorption media in a pouch (26) installed in the second basket for removes hydrocarbons from water flowing into the drain through the insert. A filtration media in a pillow (24) installed in the first basket between the first and second baskets removes contaminants, including bacteria, from water flowing through the second basket into the first basket. As a result, debris and contaminants are substantially removed from water flowing from the insert into the drain.
    Type: Application
    Filed: February 17, 2011
    Publication date: August 18, 2011
    Applicant: STORMWATER MAINTENANCE COMPANY
    Inventor: Rick Snyder
  • Publication number: 20060255102
    Abstract: A technique for defining a wettable solder joint area for an electronic assembly reduces and/or dispenses with the use of polymer solder masks. According to the technique, a substrate is provided that includes at least one conductive trace. A nickel layer is provided on the conductive trace and gold is selectively applied on the nickel layer in a desired pattern to form a gold layer. An exposed portion of the nickel layer that does not include the gold in the desired pattern is then oxidized. Finally, a solder is applied to the gold layer, with the oxidized nickel layer providing a solder stop and defining a wettable solder joint area.
    Type: Application
    Filed: May 11, 2005
    Publication date: November 16, 2006
    Inventors: Rick Snyder, Charles Delheimer, Todd Oman, M. Fairchild
  • Publication number: 20060076639
    Abstract: In one aspect, a Schottky diode includes a semiconductor material, and a metal material forming a Schottky barrier junction with the semiconductor material, wherein a cavity having a lateral dimension of at least 200 nm is adjacent to the Schottky barrier junction. In another aspect, a Schottky diode includes a semiconductor surface, a dielectric structure, and a contact structure. The dielectric structure defines an opening to the semiconductor surface. The contact structure extends through the opening in the dielectric structure to form a Schottky barrier junction with the semiconductor surface. The contact structure comprises a bonding pad overlying the Schottky barrier junction and at least a portion of the dielectric structure and being electrically connected to the Schottky barrier junction.
    Type: Application
    Filed: October 13, 2004
    Publication date: April 13, 2006
    Inventors: William Lypen, Rick Snyder, David Bigelow
  • Publication number: 20050163966
    Abstract: Surface mounting of components includes providing a substrate that has a first surface and a second surface. A portion of the first surface is coupled to a conductive layer that is patterned. A compliant layer is introduced to the first surface of the substrate and to the conductive layer. At least one aperture is formed in the compliant layer which extends to the surface of the conductive layer. Conductive material is introduced into the aperture(s). Solder couples the surface mount component to the compliant layer.
    Type: Application
    Filed: January 23, 2004
    Publication date: July 28, 2005
    Inventors: Mahesh Chengalva, Suresh Chengalva, Rick Snyder