Abstract: An aircraft airflow sensor probe configured to correct measurements based on aircraft movement includes a vane assembly configured to sense a direction of local airflow outside an aircraft, at least one accelerometer configured to detect aircraft movement, a sensor configured to sense and output a rotational position of the vane assembly, and an angle of attack processor configured to determine at least a measured angle of attack of the aircraft based on the rotational position of the vane assembly. The angle of attack processor further configured to determine a correction value based on the aircraft movement data provided by the at least one accelerometer and output a corrected angle of attack of the aircraft.

Abstract: An aircraft airflow sensor probe configured to correct measurements based on aircraft movement includes a vane assembly configured to sense a direction of local airflow outside an aircraft, at least one accelerometer configured to detect aircraft movement, a sensor configured to sense and output a rotational position of the vane assembly, and an angle of attack processor configured to determine at least a measured angle of attack of the aircraft based on the rotational position of the vane assembly. The angle of attack processor further configured to determine a correction value based on the aircraft movement data provided by the at least one accelerometer and output a corrected angle of attack of the aircraft.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes an electrically conductive layer disposed over a substrate. A moisture barrier layer is disposed over the substrate and between the substrate and the electrically conductive layer. A dielectric layer is disposed over the moisture barrier layer. The dielectric layer has an elastic modulus that is lower than an elastic modulus of the moisture barrier layer.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes an electrically conductive layer disposed over a substrate. A moisture barrier layer is disposed over the substrate and between the substrate and the electrically conductive layer. A dielectric layer is disposed over the moisture barrier layer. The dielectric layer has an elastic modulus that is lower than an elastic modulus of the moisture barrier layer.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes an electrically conductive layer disposed over a substrate. A moisture barrier layer is disposed over the substrate and between the substrate and the electrically conductive layer. A dielectric layer is disposed over the moisture barrier layer. The dielectric layer has an elastic modulus that is lower than an elastic modulus of the moisture barrier layer.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes an electrically conductive layer disposed over a substrate. A moisture barrier layer is disposed over the substrate and between the substrate and the electrically conductive layer. A dielectric layer is disposed over the moisture barrier layer. The dielectric layer has an elastic modulus that is lower than an elastic modulus of the moisture barrier layer.

Abstract: A semiconductor package comprises: a substrate comprising a semiconductor device; a cap comprising a seal ring disposed over a surface of the cap; and a gap between the substrate and the surface of the cap. The seal ring comprises a tread comprising at least two columns.

Abstract: In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; and a single-material acoustic coupling layer disposed between the first and second BAW resonators, the acoustic coupling layer having an acoustic impedance less than approximately 6.0 MRayls and an acoustic attenuation less than approximately 1000 dB/cm.

Abstract: A semiconductor package comprises: a substrate comprising a semiconductor device; a cap comprising a seal ring disposed over a surface of the cap; and a gap between the substrate and the surface of the cap. The seal ring comprises a tread comprising at least two columns.

Abstract: In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; and a single-material acoustic coupling layer disposed between the first and second BAW resonators, the acoustic coupling layer having an acoustic impedance less than approximately 6.0 MRayls and an acoustic attenuation less than approximately 1000 dB/cm.

Abstract: A multi-stage drain filter insert (10) comprises a first basket (14) installed in a drain (D) inlet (I). A second basket (20) fits inside the first basket and is installed therewith for debris in the water flowing into the insert to be collected in a bottom of the second basket. An absorption media in a pouch (26) installed in the second basket for removes hydrocarbons from water flowing into the drain through the insert. A filtration media in a pillow (24) installed in the first basket between the first and second baskets removes contaminants, including bacteria, from water flowing through the second basket into the first basket. As a result, debris and contaminants are substantially removed from water flowing from the insert into the drain.

Abstract: A technique for defining a wettable solder joint area for an electronic assembly reduces and/or dispenses with the use of polymer solder masks. According to the technique, a substrate is provided that includes at least one conductive trace. A nickel layer is provided on the conductive trace and gold is selectively applied on the nickel layer in a desired pattern to form a gold layer. An exposed portion of the nickel layer that does not include the gold in the desired pattern is then oxidized. Finally, a solder is applied to the gold layer, with the oxidized nickel layer providing a solder stop and defining a wettable solder joint area.

Abstract: In one aspect, a Schottky diode includes a semiconductor material, and a metal material forming a Schottky barrier junction with the semiconductor material, wherein a cavity having a lateral dimension of at least 200 nm is adjacent to the Schottky barrier junction. In another aspect, a Schottky diode includes a semiconductor surface, a dielectric structure, and a contact structure. The dielectric structure defines an opening to the semiconductor surface. The contact structure extends through the opening in the dielectric structure to form a Schottky barrier junction with the semiconductor surface. The contact structure comprises a bonding pad overlying the Schottky barrier junction and at least a portion of the dielectric structure and being electrically connected to the Schottky barrier junction.

Abstract: Surface mounting of components includes providing a substrate that has a first surface and a second surface. A portion of the first surface is coupled to a conductive layer that is patterned. A compliant layer is introduced to the first surface of the substrate and to the conductive layer. At least one aperture is formed in the compliant layer which extends to the surface of the conductive layer. Conductive material is introduced into the aperture(s). Solder couples the surface mount component to the compliant layer.