Abstract: A device and fabrication techniques are described that employ wafer-level packaging techniques for fabricating semiconductor devices that include a pad defined contact. In implementations, the wafer-level package device that employs the techniques of the present disclosure includes a substrate, a passivation layer, a top metal contact pad, a thin film with a via formed therein, a redistribution layer structure configured to contact the top metal contact pad, and a dielectric layer on the thin film and the redistribution layer structure. In implementations, a process for fabricating the wafer-level package device that employs the techniques of the present disclosure includes processing a substrate, forming a passivation layer, depositing a top metal contact pad, forming a thin film with a via formed therein, forming a redistribution layer structure in the via formed in the thin film, and forming a dielectric layer on the thin film and the redistribution layer structure.

Abstract: A heat dissipating wafer level package and method for manufacturing a heat dissipating wafer level package is provided. The heat dissipating wafer level package has a thermally conductive coating integrated thereon which facilitates the dissipation of heat from a device into the surrounding air and/or the thermal transfer of heat away from the device toward a heat spreader or heat sink. Additionally, the coating enhances the structural integrity and strength of the wafer during the manufacturing process as well as the resulting WLP.