Abstract: A chip set containing an infrared detector array and two signal processors are located on the focal plane of an infrared detecting system. Included in the processors is time delay and integrate circuitry for improvement of the signal-to-noise ratio of the detector outputs before further processing, remote to the focal plane. The time delay and integrate circuitry is comprised of a number of bucket brigade devices which are situated to form a parallel-input serial shift register. Detector column input signals are decoded and the appropriate detector signal loaded into the correct port on the shift register, so that correlated signals are summed as they move through the register.

Abstract: A charge transfer device (CTD)/complementary metal oxide semiconductor (CMOS) process for the production of a signal processing apparatus is disclosed. The process consists of selectively combining virtual phase CCD process technology with CMOS technology to provide high density signal processing utilizing small (3 micron) geometries, sized P and N MOS (CMOS) transistors, and high valued (0.8 picofarad) poly-poly capacitors. The process is a single and efficient (14-16 photomasks) fabrication process starting with a single layer of P+ silicon as a substrate supporting an epitaxial layer of P silicon as the active area. An N well is formed in the epitaxial surface for a P-channel MOSFET, then using a patterned moat and positive and negative resists boron is ion implanted to form channel separators between N and P channel transistors, and P+ isolation regions and channel stops for the CCDs.