Patents by Inventor Ricky WANG

Ricky WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10749007
    Abstract: Semiconductor device structures comprising a gate structure having different profiles at different portions of the gate structure are provided. In some examples, a semiconductor device includes a fin structure on a substrate, a source/drain structure on the fin structure, and a gate structure over the fin structure and along a sidewall of the fin. The source/drain structure is proximate the gate structure. The gate structure has a top portion having a first sidewall profile and a bottom portion having a second sidewall profile different from the first sidewall profile.
    Type: Grant
    Filed: March 14, 2018
    Date of Patent: August 18, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ricky Wang, Chao-Cheng Chen, Jr-Jung Lin, Chi-Wei Yang
  • Publication number: 20190288084
    Abstract: Semiconductor device structures comprising a gate structure having different profiles at different portions of the gate structure are provided. In some examples, a semiconductor device includes a fin structure on a substrate, a source/drain structure on the fin structure, and a gate structure over the fin structure and along a sidewall of the fin. The source/drain structure is proximate the gate structure. The gate structure has a top portion having a first sidewall profile and a bottom portion having a second sidewall profile different from the first sidewall profile.
    Type: Application
    Filed: March 14, 2018
    Publication date: September 19, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ricky WANG, Chao-Cheng CHEN, Jr-Jung LIN, Chi-Wei YANG