Abstract: A frequency sensor includes at least one a resistor element and a capacitor. A frequency is detected according to a charging/discharging time to/from the capacitor, thereby realizing a frequency sensor with reduced power consumption and reduced circuit scale. Further, plural resistors and plural capacitors can be provided, along with switches connected to the respective resistors and capacitors. Additionally, a time constant can be adjusted after production, whereby variations in production can be reduced. Furthermore, a self-diagnosis circuit can be included for determining whether the frequency sensor itself operates normally or not. Thus, a highly-reliable frequency sensor can be realized.

Abstract: As a countermeasure against operating an LSI with a frequency out of an allowed range, there is a frequency sensor that generates reference clocks and detects the frequency by counting the reference clocks. In this method, however, power consumption and circuit scale are undesirably increased. So, in the present invention, a resistor element (13) and a capacitor (14) are provided, and a frequency is detected according to a charging/discharging time to/from the capacitor (14), thereby realizing a frequency sensor with reduced power consumption and reduced circuit scale. Further, when plural resistors and plural capacitors are provided and switches are connected to the respective resistors and capacitors, the time constant can be adjusted after production, whereby variations in production can be reduced. Furthermore, when a self-diagnosis circuit for determining whether the frequency sensor itself operates normally or not is provided, a highly-reliable frequency sensor can be realized.

Abstract: A semiconductor integrated circuit device (10) is composed of an LSI function unit (11) and a shield wiring layer (22) formed on the unit. The LSI function unit (11) includes a semiconductor substrate (12) and a first insulating film (13), and the semiconductor substrate (12) is formed with a circuit element including, for example, a MOS transistor (14). The shield wiring layer (22) is composed of a lower shield line (23), a third insulating film (24), an upper shield line (25), and a fourth insulating film (26) sequentially stacked above a second insulating film (17). The directions in which the lower and upper shield lines (23) and (25) are arranged intersect each other.

Abstract: A semiconductor integrated circuit device (10) is composed of an LSI function unit (11) and a shield wiring layer (22) formed on the unit. The LSI function unit (11) includes a semiconductor substrate (12) and a first insulating film (13), and the semiconductor substrate (12) is formed with a circuit element including, for example, a MOS transistor (14). The shield wiring layer (22) is composed of a lower shield line (23), a third insulating film (24), an upper shield line (25), and a fourth insulating film (26) sequentially stacked above a second insulating film (17). The directions in which the lower and upper shield lines (23) and (25) are arranged intersect each other.