Abstract: An information processing system includes a server and a user terminal, wherein the server includes circuitry configured to cause the user terminal to display, on one screen, data from a satellite, the data being current position information of the satellite with respect to Earth and at least one of measurement data or video data.

Abstract: An information processing system includes a server and a user terminal, wherein the server includes circuitry configured to acquire data from a satellite, the data being at least one of measurement data or video data, transmit the data acquired from the satellite to the user terminal, acquire, from the user terminal, an instruction specifying one or more conditions, the one or more conditions being at least one of a measurement condition or a video-recording condition for the satellite, and transmit the instruction specifying the one or more conditions acquired from the user terminal to the satellite.

Abstract: Disclosed is a method of forming electrodes on diamond comprising the steps of: forming a mask pattern on diamond or diamond film; performing a treatment of the diamond surface by a plasma of inert gases; forming an electrode film on the whole surface of the specimen; and removing the mask, thereby forming a specified pattern of the electrodes. By this method, it is possible to form electrodes having high adhesion to diamond and diamond film for electronic devices.

Abstract: Disclosed is a method of forming electrodes on diamond comprising the steps of: forming a mask pattern on diamond or diamond film; performing a treatment of the diamond surface by a plasma of inert gases; forming an electrode film on the whole surface of the specimen; and removing the mask, thereby forming a specified pattern of the electrodes. By this method, it is possible to form electrodes having high adhesion to diamond and diamond film for electronic devices.

Abstract: A pair of electrodes 3 are first formed on a substrate. Subsequently, an undoped diamond film is selectively deposited between the above electrodes. A B-doped diamond film is then selectively formed on both the insulating diamond film and part of each electrode. The substrate may be contained in a container provided with an opening portion from which only the B-doped diamond film is exposed.

Abstract: A method for forming diamond films by vapor phase synthesis comprising a process of forming the diamond films on a substrate by direct current discharge plasma, in an atmosphere of a reaction gas including a gas containing at least carbon and hydrogen, or in an atmosphere of a mixed gas containing at least a carbon-containing gas and a hydrogen gas, at a gas pressure between 0.1 and 5 Torr and a substrate temperature between 300.degree. and 1000.degree. C.