Abstract: A resist underlayer film composition for use in a multilayer resist method, containing one or more compounds shown by formula (1), and an organic solvent, WX)n??(1) W represents an n-valent organic group having 2 to 50 carbon atoms. X represents a monovalent organic group shown by formula (1X). “n” represents an integer of 1 to 10, The dotted line represents a bonding arm. R01 represents an acryloyl or methacryloyl group. Y represents a single bond or a carbonyl group. Z represents a monovalent organic group having 1 to 30 carbon atoms. A resist underlayer film composition can be cured by high energy beam irradiation and form a resist underlayer film having excellent filling and planarizing properties and appropriate etching resistance and optical characteristics in a fine patterning process by a multilayer resist method in the semiconductor apparatus manufacturing process.

Abstract: The present invention provides a compound for forming an organic film which has a minimum complex viscosity of 10 Pa·s or less when the complex viscosity is measured within a range of 50° C. to 300° C. This compound for forming an organic film can provide an organic film composition having high filling and planarizing properties.

Abstract: The present invention provides a method for forming an organic film, including: forming a coating film by spin coating of an organic film-forming composition onto a substrate having an uneven pattern, and thereafter subjecting the substrate to a vibration treatment, and after or simultaneously with the vibration treatment, insolubilizing the coating film to an organic solvent to form the organic film. This provides a method for forming an organic film that can fill an uneven pattern on a substrate to highly flatten a substrate at low cost in a production step of a semiconductor apparatus, etc.

Abstract: A composition for forming a coating type BPSG film, containing one or more silicic acid skeletal structures represented by formula (1), one or more phosphoric acid skeletal structures represented by formula (2), one or more boric acid skeletal structures represented by formula (3), and one or more silicon skeletal structures represented by formula (4), wherein the composition contains a coupling between units in formula (4). The composition is capable of forming a BPSG film that has excellent adhesiveness in fine patterning, can be easily wet etched by a removing liquid which does not cause damage to a semiconductor substrate and a coating type organic film or a CVD film mainly consisting of carbon which is required in the patterning process, can maintain the peelability even after dry etching, and can suppress generation of particles by forming it in the coating process.

Abstract: A composition for forming a coating type silicon-containing film, containing one or more silicic acid skeletal structures represented by the formula (1) and one or more silicon skeletal structures represented by the formula (2), wherein the composition contains a coupling between units shown in the formula (2). There can be provided a composition capable of forming a silicon-containing film that has excellent adhesiveness in fine patterning, and can be easily wet etched by a removing liquid which does not cause damage to a semiconductor substrate and a coating type organic film or a CVD film mainly of carbon which is required in the patterning process.

Abstract: A resist underlayer film composition for use in a multilayer resist method, containing one or more compounds shown by formula (1), and an organic solvent, W?X)n ??(1) W represents an n-valent organic group having 2 to 50 carbon atoms. X represents a monovalent organic group shown by formula (1X). “n” represents an integer of 1 to 10, The dotted line represents a bonding arm. R01 represents an acryloyl or methacryloyl group. Y represents a single bond or a carbonyl group. Z represents a monovalent organic group having 1 to 30 carbon atoms. A resist underlayer film composition can be cured by high energy beam irradiation and form a resist underlayer film having excellent filling and planarizing properties and appropriate etching resistance and optical characteristics in a fine patterning process by a multilayer resist method in the semiconductor apparatus manufacturing process.

Abstract: The invention provides a polymer for a resist under layer film composition, containing a repeating unit shown by the formula (1) and a repeating unit shown by the formula (3), wherein R01 independently represents a hydrogen atom or a methyl group; R02 represents a group selected from the formulae (1-1) to (1-3); R03 represents a saturated or unsaturated tertiary alkyl group having 4 to 20 carbon atoms and optionally containing an oxygen functional group; and A2 represents a single bond or a divalent linking group having 2 to 10 carbon atoms and containing an ester group, wherein the dotted line represents a bonding arm.

Abstract: The present invention provides a method for forming an organic film, including: forming a coating film by spin coating of an organic film-forming composition onto a substrate having an uneven pattern, and thereafter subjecting the substrate to a vibration treatment, and after or simultaneously with the vibration treatment, insolubilizing the coating film to an organic solvent to form the organic film. This provides a method for forming an organic film that can fill an uneven pattern on a substrate to highly flatten a substrate at low cost in a production step of a semiconductor apparatus, etc.

Abstract: An organic film composition including a compound represented by the following general formula (1), wherein n1 and n2 each independently represent 0 or 1; “W” represents a single bond or any of structures represented by the following formula (2); R1 represents any of structures represented by the following general formula (3); m1 and m2 each independently represent an integer of 0 to 7, with the proviso that m1+m2 is 1 to 14. There can be provided an organic film composition for forming an organic film having dry etching resistance as well as advanced filling/planarizing characteristics.

Abstract: The present invention provides a compound for forming an organic film which has a minimum complex viscosity of 10 Pa·s or less when the complex viscosity is measured within a range of 50° C. to 300° C. This compound for forming an organic film can provide an organic film composition having high filling and planarizing properties.

Abstract: The present invention provides a patterning process, which comprises step of forming a BPSG film on the under layer film by using a composition for forming a coating type BPSG film including a base polymer and an organic compound with a content of 25 parts by mass or more of the organic compound with respect to 100 parts by mass of the base polymer, the base polymer having a silicon containing unit, a boron containing unit and a phosphorus containing unit with a total content of the boron containing unit and the phosphorus containing unit being 10 mol % or more, the organic compound having two or more hydroxyl groups or carboxyl groups per one molecule.

Abstract: An organic film composition including a compound represented by the following general formula (1), wherein n1 and n2 each independently represent 0 or 1; “W” represents a single bond or any of structures represented by the following formula (2); R1 represents any of structures represented by the following general formula (3); m1 and m2 each independently represent an integer of 0 to 7, with the proviso that m1+m2 is 1 to 14. There can be provided an organic film composition for forming an organic film having dry etching resistance as well as advanced filling/planarizing characteristics.

Abstract: The invention provides a polymer for a resist under layer film composition, containing a repeating unit shown by the formula (1) and a repeating unit shown by the formula (3), wherein R01 independently represents a hydrogen atom or a methyl group; R02 represents a group selected from the formulae (1-1) to (1-3); R03 represents a saturated or unsaturated tertiary alkyl group having 4 to 20 carbon atoms and optionally containing an oxygen functional group; and A2 represents a single bond or a divalent linking group having 2 to 10 carbon atoms and containing an ester group, wherein the dotted line represents a bonding arm. There can be provided a polymer for a resist under layer film composition that is capable of forming a resist under layer film having good alkali aqueous hydrogen peroxide resistance, excellent filling and planarizing properties, and excellent dry etching property.

Abstract: The present invention provides a patterning process, which comprises step of forming a BPSG film on the under layer film by using a composition for forming a coating type BPSG film including a base polymer and an organic compound with a content of 25 parts by mass or more of the organic compound with respect to 100 parts by mass of the base polymer, the base polymer having a silicon containing unit, a boron containing unit and a phosphorus containing unit with a total content of the boron containing unit and the phosphorus containing unit being 10 mol % or more, the organic compound having two or more hydroxyl groups or carboxyl groups per one molecule.

Abstract: A method for producing a semiconductor apparatus substrate includes steps of: forming silicon-containing film having silicon content of 1% by mass or more and 30% by mass or less on an organic under layer film formed on an substrate; forming a resist film on silicon-containing film; forming a resist pattern by exposing and developing resist film; transferring pattern to silicon-containing film using resist pattern as a mask; transferring pattern to organic under layer film using silicon-containing film as a mask to leave part or all of silicon-containing film on organic under layer film; implanting ions into substrate using organic under layer film as a mask; and peeling organic under layer film used as mask for ion implantation on which part or all of silicon-containing film remains, with peeling liquid.

Abstract: A composition for forming a coating type silicon-containing film, containing one or more silicic acid skeletal structures represented by the formula (1) and one or more silicon skeletal structures represented by the formula (2), wherein the composition contains a coupling between units shown in the formula (2). There can be provided a composition capable of forming a silicon-containing film that has excellent adhesiveness in fine patterning, and can be easily wet etched by a removing liquid which does not cause damage to a semiconductor substrate and a coating type organic film or a CVD film mainly of carbon which is required in the patterning process.

Abstract: A composition for forming a coating type BPSG film, containing one or more silicic acid skeletal structures represented by formula (1), one or more phosphoric acid skeletal structures represented by formula (2), one or more boric acid skeletal structures represented by formula (3), and one or more silicon skeletal structures represented by formula (4), wherein the composition contains a coupling between units in formula (4). The composition is capable of forming a BPSG film that has excellent adhesiveness in fine patterning, can be easily wet etched by a removing liquid which does not cause damage to a semiconductor substrate and a coating type organic film or a CVD film mainly consisting of carbon which is required in the patterning process, can maintain the peelability even after dry etching, and can suppress generation of particles by forming it in the coating process.

Abstract: A method for producing a semiconductor apparatus substrate includes steps of: forming silicon-containing film having silicon content of 1% by mass or more and 30% by mass or less on an organic under layer film formed on an substrate; forming a resist film on silicon-containing film; forming a resist pattern by exposing and developing resist film; transferring pattern to silicon-containing film using resist pattern as a mask; transferring pattern to organic under layer film using silicon-containing film as a mask to leave part or all of silicon-containing film on organic under layer film; implanting ions into substrate using organic under layer film as a mask; and peeling organic under layer film used as mask for ion implantation on which part or all of silicon-containing film remains, with peeling liquid.

Abstract: The present invention provides a displacement gold plating solution and a plating treatment technology capable of realizing a uniform film thickness when forming a connecting portion obtained by sequentially plating a nickel layer, a palladium layer, and a gold layer in layers. The present invention provides a displacement gold plating solution for forming a connecting portion obtained by sequentially plating a nickel layer, a palladium layer, and a gold layer in layers on a conductor layer containing a conductive metal. The displacement gold plating solution contains a gold cyanide salt, a complexing agent, and a copper compound. A molar ratio of the complexing agent and the copper compound in the displacement gold plating solution is in a range of complexing agent/copper ion=1.0 to 500. A compound formed from the complexing agent and the copper compound has a stability constant of 8.5 or higher at a pH of between 4 and 6.

Abstract: To provide a hard gold-based plating solution which enables selective partial plating treatment and is suitable for electronic components such as a connector. A hard gold-based plating solution of the present invention comprises: a soluble gold salt or a gold complex; a conductive salt; and a chelating agent, wherein the hard gold-based plating solution further comprises an aromatic compound having one or more nitro groups, for example, an aromatic compound selected from the group consisting of nitrobenzoic acid, dinitrobenzoic acid and nitrobenzene sulfonic acid. The hard gold-based plating solution further comprises at least one metal salt of a cobalt salt, a nickel salt and a silver salt, or polyethyleneimine as an organic additive.