Abstract: The solid-state imaging device having pixels that are arranged in rows and columns and convert optical signals to electric signals to output the electric signals as voltage signals includes column signal lines each provided for a corresponding one of the columns and transmitting, in the direction of the columns, voltage signals outputted from the pixels, current sources each provided for and connected to a corresponding one of the column signal lines, column amplification circuits each provided for a corresponding one of the column signal lines and amplifying the voltage signals transmitted through the column signal lines, a current-source ground potential supply line supplying the current sources with ground potential, and a column amplification circuit ground potential supply line supplying the column amplification circuits with ground potential.

Abstract: The solid-state imaging device having pixels that are arranged in rows and columns and convert optical signals to electric signals to output the electric signals as voltage signals includes column signal lines each provided for a corresponding one of the columns and transmitting, in the direction of the columns, voltage signals outputted from the pixels, current sources each provided for and connected to a corresponding one of the column signal lines, column amplification circuits each provided for a corresponding one of the column signal lines and amplifying the voltage signals transmitted through the column signal lines, a current-source ground potential supply line supplying the current sources with ground potential, and a column amplification circuit ground potential supply line supplying the column amplification circuits with ground potential.

Abstract: It is an object of the present invention to provide a solid-state imaging device capable of significantly improving the signal readout characteristics of the pixel compared to the conventional technologies at low cost, without degrading the reliability, and a driving method thereof. The solid-state imaging device according to the present invention is a solid-state imaging device which includes a drive circuit, and the drive circuit includes: a P-channel transistor and a N-channel transistor which include gates connected to an output of the scanning circuit, and which include drains that are connected to each other, and a connecting point of the drains is connected to the control signal line, a switch which switches between VHI and DVDD to be supplied to a source of the P-channel transistor, and a switch which switches between VLOW and VGND to be supplied to a source of the N-channel transistor.