Patents by Inventor Rie Sato

Rie Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Spin-valve transistor
    Publication number: 20030062580
    Abstract: A spin-valve transistor has an emitter, a base including a spin-valve film in which two magnetic layers are stacked with interposing a nonmagnetic layer between the two magnetic layers, and a collector, the spin-valve film having a stacked structure of M/A/M′ or M/B/M′ and the spin-valve film being (100)-oriented, where each of M and M′ includes at least one element selected from the group consisting of Fe, Co, Ni and an alloy including Fe, Co, Ni, A includes at least one element selected from the group consisting of Au, Ag, Pt, Cu and Al, and B includes at least one element selected from the group consisting of Cr and Mn.
    Type: Application
    Filed: November 5, 2002
    Publication date: April 3, 2003
    Inventors: Rie Sato, Koichi Mizushima
  • Spin-valve transistor
    Patent number: 6501143
    Abstract: A spin-valve transistor has an emitter, a base including a spin-valve film in which two magnetic layers are stacked with interposing a nonmagnetic layer between the two magnetic layers, and a collector, the spin-valve film having a stacked structure of M/A/M′ or M/B/M′ and the spin-valve film being (100)-oriented, where each of M and M′ includes at least one element selected from the group consisting of Fe, Co, Ni and an alloy including Fe, Co, Ni, A includes at least one element selected from the group consisting of Au, Ag, Pt, Cu and Al, and B includes at least one element selected from the group consisting of Cr and Mn.
    Type: Grant
    Filed: June 29, 2001
    Date of Patent: December 31, 2002
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Rie Sato, Koichi Mizushima
  • Spin-valve transistor
    Publication number: 20020000575
    Abstract: A spin-valve transistor has an emitter, a base including a spin-valve film in which two magnetic layers are stacked with interposing a nonmagnetic layer between the two magnetic layers, and a collector, the spin-valve film having a stacked structure of M/A/M′ or M/B/M′ and the spin-valve film being (100)-oriented, where each of M and M′ includes at least one element selected from the group consisting of Fe, Co, Ni and an alloy including Fe, Co, Ni, A includes at least one element selected from the group consisting of Au, Ag, Pt, Cu and Al, and B includes at least one element selected from the group consisting of Cr and Mn.
    Type: Application
    Filed: June 29, 2001
    Publication date: January 3, 2002
    Inventors: Rie Sato, Koichi Mizushima
  • Capacitor having electrodes with two-dimensional conductivity
    Patent number: 6144546
    Abstract: A capacitor having a small leakage current comprises first and second electrodes and a dielectric. At least one of the electrodes may be formed of a laminar two-dimensional semimetal, a laminar two-dimensional semiconductor, a very thin metal film, or a very thin semimetal film. Alternatively, at least one of the electrodes may be a laminate film comprising laminated layers of a very thin semimetal or metal film and a very thin semiconductor film. One example of such a capacitor is a thin hexagonal boron nitride BN film sandwiched between two graphite films.
    Type: Grant
    Filed: December 23, 1997
    Date of Patent: November 7, 2000
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Koichi Mizushima, Rie Sato