Abstract: A dust core contains magnetic nanoparticles whose average particle size is 1 to 300 nm, and an aromatic compound that includes two or more functional groups of at least one type selected from a group consisting of a carboxy group and a hydroxy group.

Abstract: A force detection device includes: a substrate; and a force transmission block. The substrate includes: a mesa gauge arranged on a principal plane of the substrate and providing a bridge circuit; a connection region arranged on the principal plane; and a sealing portion surrounding all around the mesa gauge and connected to the force transmission block. The mesa gauge includes: a first mesa gauge extending in a first direction; and a second mesa gauge extending in a second direction and spaced apart from the first mesa gauge. The connection region electrically connects the one end of the first mesa gauge and the one end of the second mesa gauge.

Abstract: A force detection apparatus includes a substrate and a force transmission block. The substrate includes: a high-sensitive mesa gauge that is provided on a main surface, extends in a first direction to produce a relatively large change of an electric resistance in accordance with compressive stress, and includes a top surface; a low-sensitive mesa gauge that is provided on the main surface, extends in a second direction to produce a relatively small change of an electric resistance, and includes a top surface; and a mesa lead that is provided on the main surface, extends in a third direction, and includes a top surface. The force transmission block contacts the top surface of the high-sensitive mesa gauge and the top surface of the low-sensitive mesa gauge, and is non-contact with at least a part of the top surface of the mesa lead.

Abstract: A force detection device includes: a substrate that includes a power supply wire, a reference wire, a first output wire, a second output wire and first to fourth mesa gauges extending along a first direction; and a force transmission block connected to the substrate. A pair of the first and second mesa gauges and a pair of the third and fourth mesa gauges are connected in parallel to each other between the power supply wire and the reference wire. The first output wire is connected between the first and second mesa gauges. The second output wire is connected between the third and fourth mesa gauges. A contact area of the force transmission block with a first pair of the first and fourth mesa gauges is different from a contact area of the force transmission block with a second pair of the second and third mesa gauges.

Abstract: A force detection device includes: a substrate that includes a power supply wire, a reference wire, a first output wire, a second output wire and first to fourth mesa gauges extending along a first direction; and a force transmission block connected to the substrate. A pair of the first and second mesa gauges and a pair of the third and fourth mesa gauges are connected in parallel to each other between the power supply wire and the reference wire. The first output wire is connected between the first and second mesa gauges. The second output wire is connected between the third and fourth mesa gauges. A contact area of the force transmission block with a first pair of the first and fourth mesa gauges is different from a contact area of the force transmission block with a second pair of the second and third mesa gauges.

Abstract: A force detection device includes: a substrate; and a force transmission block. The substrate includes: a mesa gauge arranged on a principal plane of the substrate and providing a bridge circuit; a connection region arranged on the principal plane; and a sealing portion surrounding all around the mesa gauge and connected to the force transmission block. The mesa gauge includes: a first mesa gauge extending in a first direction; and a second mesa gauge extending in a second direction and spaced apart from the first mesa gauge. The connection region electrically connects the one end of the first mesa gauge and the one end of the second mesa gauge.

Abstract: A force detection apparatus includes a substrate and a force transmission block. The substrate includes: a high-sensitive mesa gauge that is provided on a main surface, extends in a first direction to produce a relatively large change of an electric resistance in accordance with compressive stress, and includes a top surface; a low-sensitive mesa gauge that is provided on the main surface, extends in a second direction to produce a relatively small change of an electric resistance, and includes a top surface; and a mesa lead that is provided on the main surface, extends in a third direction, and includes a top surface. The force transmission block contacts the top surface of the high-sensitive mesa gauge and the top surface of the low-sensitive mesa gauge, and is non-contact with at least a part of the top surface of the mesa lead.

Abstract: A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.

Abstract: A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.

Abstract: A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.

Abstract: A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.