Abstract: A power supply apparatus includes a primary battery, a secondary battery, and an output terminal. The secondary battery is coupled in parallel with the primary battery. The output terminal outputs electric power from the secondary battery to an outside. A discharge capacity of the primary battery is larger than a discharge capacity of the secondary battery.

Abstract: A secondary battery includes an outer package member, an electrode terminal, and a battery device. The outer package member has a flat and columnar shape and includes a first bottom part and a second bottom part opposed to each other. The electrode terminal is supported by the first bottom part and is insulated from the first bottom part. The battery device is contained inside the outer package member and includes a first electrode and a second electrode. The first bottom part has a recess around the electrode terminal.

Abstract: A secondary battery includes an outer package member, a battery device, and an insulating member. The battery device is contained inside the outer package member, and includes a positive electrode and a negative electrode that are opposed to each other and are wound. The insulating member is provided on the positive electrode. The positive electrode includes a positive electrode current collector, and a positive electrode active material layer provided on the positive electrode current collector. The negative electrode includes a negative electrode current collector, and a negative electrode active material layer provided on the negative electrode current collector on a side opposed to the positive electrode active material layer. The positive electrode includes an exposed part in which the positive electrode active material layer is not provided and the positive electrode current collector is exposed. The exposed part is opposed to the negative electrode active material layer.

Abstract: A secondary battery includes a negative electrode, a positive electrode, and an electrolytic solution. The negative electrode includes a negative electrode active material layer. The positive electrode includes a positive electrode active material layer. The positive electrode active material layer has a same dimension as a dimension of the negative electrode active material layer in a width direction. The positive electrode active material layer includes a reaction active part in which charging and discharging reactions proceed, and a reaction less-active part in which the charging and discharging reactions proceed less easily than in the reaction active part. The reaction less-active part includes one end part, another end part, or both of the positive electrode active material layer in the width direction.

Abstract: An inorganic fiber structure comprising inorganic nanofibers having an average fiber diameter of 3 ?m or less, in which an entirety including the inside thereof is adhered with an inorganic adhesive, and the porosity thereof is 90% or more, is disclosed.

Abstract: A process of manufacturing inorganic nanofibers, without using an organic polymer, using a highly reactive metal alkoxide such as titanium alkoxide or zirconium alkoxide, in particular, a process in which inorganic nanofibers can be stably produced over a long period, is provided. It is a process of manufacturing inorganic nanofibers by electrospinning using a sol solution containing an inorganic component as a main component, characterized in that the sol solution contains a metal alkoxide having a high reactivity and a salt catalyst, and that the salt catalyst is an amine compound having an N—N bond, an N—O bond, an N—C?N bond, or an N—C?S bond.

Abstract: A process for manufacturing organic fibers containing an inorganic component comprising the steps of: (1) preparing an inorganic spinnable sol solution; (2) mixing the inorganic spinnable sol solution, a solvent capable of dissolving the inorganic spinnable sol solution, and an organic polymer capable of being dissolved in the solvent to prepare a spinning solution; and (3) spinning the spinning solution to form the organic fibers containing an inorganic component composed of an inorganic gel and the organic polymer, is disclosed. The inorganic spinnable sol solution preferably has a weight average molecular weight of 10,000 or more, and the inorganic spinnable sol solution is preferably prepared from a material containing a metal alkoxide having an organic substituent.

Abstract: An inorganic fiber structure comprising inorganic nanofibers having an average fiber diameter of 3 ?m or less, in which an entirety including the inside thereof is adhered with an inorganic adhesive, and the porosity thereof is 90% or more, is disclosed.

Abstract: A process of manufacturing inorganic nanofibers, without using an organic polymer, using a highly reactive metal alkoxide such as titanium alkoxide or zirconium alkoxide, in particular, a process in which inorganic nanofibers can be stably produced over a long period, is provided. It is a process of manufacturing inorganic nanofibers by electrospinning using a sol solution containing an inorganic component as a main component, characterized in that the sol solution contains a metal alkoxide having a high reactivity and a salt catalyst, and that the salt catalyst is an amine compound having an N—N bond, an N—O bond, an N—C?N bond, or an N—C?S bond.

Abstract: A process for manufacturing organic fibers containing an inorganic component comprising the steps of: (1) preparing an inorganic spinnable sol solution; (2) mixing the inorganic spinnable sol solution, a solvent capable of dissolving the inorganic spinnable sol solution, and an organic polymer capable of being dissolved in the solvent to prepare a spinning solution; and (3) spinning the spinning solution to form the organic fibers containing an inorganic component composed of an inorganic gel and the organic polymer, is disclosed. The inorganic spinnable sol solution preferably has a weight average molecular weight of 10,000 or more, and the inorganic spinnable sol solution is preferably prepared from a material containing a metal alkoxide having an organic substituent.

Abstract: In this invention, the semiconductor device is provided with a gate electrode formed on a gate insulating film in a region sectioned by an element isolation formed on a semiconductor layer of the first conduction type, and a source region and a drain region of the second conduction type. At least one of the source region and the drain region has a first low concentration region and a high concentration region. Also, the semiconductor device of the present invention is provided with a second low concentration region of the second conduction type between a channel stopper region formed below the element isolation and the source region, and between the channel stopper region and the drain region. The semiconductor layer immediately below the gate electrode projects to the channel stopper region side along the gate electrode, and the semiconductor layer and the channel stopper region make contact with each other.

Abstract: In this invention, the semiconductor device is provided with a gate electrode formed on a gate insulating film in a region sectioned by an element isolation formed on a semiconductor layer of the first conduction type, and a source region and a drain region of the second conduction type. At least one of the source region and the drain region has a first low concentration region and a high concentration region. Also, the semiconductor device of the present invention is provided with a second low concentration region of the second conduction type between a channel stopper region formed below the element isolation and the source region, and between the channel stopper region and the drain region. The semiconductor layer immediately below the gate electrode projects to the channel stopper region side along the gate electrode, and the semiconductor layer and the channel stopper region make contact with each other.

Abstract: In this invention, the semiconductor device is provided with a gate electrode formed on a gate insulating film in a region sectioned by an element isolation formed on a semiconductor layer of the first conduction type, and a source region and a drain region of the second conduction type. At least one of the source region and the drain region has a first low concentration region and a high concentration region. Also, the semiconductor device of the present invention is provided with a second low concentration region of the second conduction type between a channel stopper region formed below the element isolation and the source region, and between the channel stopper region and the drain region. The semiconductor layer immediately below the gate electrode projects to the channel stopper region side along the gate electrode, and the semiconductor layer and the channel stopper region make contact with each other.