Abstract: A flip-chip type semiconductor device includes a semiconductor chip having electrode pads formed and arranged on a chip surface thereof. Sprout-shaped metal bumps are bonded to the electrode pads on the chip, and an adhesive resin layer is formed on the chip surface of the chip such that tip ends of the sprout-shaped metal bumps are protruded from the adhesive resin layer. A circumference of the tip end of each sprout-shaped metal bump is surrounded by a protective resin material integrally swelled from the adhesive rein layer such that a tip end face of each sprout-shaped metal bump is at least exposed to the outside.

Abstract: A flip-chip type semiconductor device includes a semiconductor chip having electrode pads formed and arranged on a chip surface thereof. Sprout-shaped metal bumps are bonded to the electrode pads on the chip, and an adhesive resin layer is formed on the chip surface of the chip such that tip ends of the sprout-shaped metal bumps are protruded from the adhesive resin layer. A circumference of the tip end of each sprout-shaped metal bump is surrounded by a protective resin material integrally swelled from the adhesive rein layer such that a tip end face of each sprout-shaped metal bump is at least exposed to the outside.

Abstract: A flip-chip type semiconductor device includes a semiconductor chip having electrode pads formed and arranged on a chip surface thereof. Sprout-shaped metal bumps are bonded to the electrode pads on the chip, and an adhesive resin layer is formed on the chip surface of the chip such that tip ends of the sprout-shaped metal bumps are protruded from the adhesive resin layer. A circumference of the tip end of each sprout-shaped metal bump is surrounded by a protective resin material integrally swelled from the adhesive rein layer such that a tip end face of each sprout-shaped metal bump is at least exposed to the outside.

Abstract: A semiconductor device in which a semiconductor element and a substrate are disposed face-to-face is obtained by: providing a sealing resin, which is a mixture of a thermoplastic resin and a thermosetting resin, between the semiconductor element and the substrate; heating at a temperature greater than a melting temperature of the thermoplastic resin; applying pressure to the sealing resin so that it spreads through the space between the semiconductor element and the substrate; melt-bonding the semiconductor element and the substrate through a cooling contraction of the thermoplastic resin component; and heating at a temperature less than a melt bond temperature of the thermoplastic resin component to cure the thermosetting resin component.

Abstract: The present invention relates to a semiconductor device in which a semiconductor element and a substrate are disposed face-to-face, the mixture of the thermoplastic resin and the thermosetting resin is provided between the semiconductor element having the electrode formed thereon and the substrate having the wiring pattern formed thereon, the mixture holding in contact the electrode of the semiconductor element and the wiring pattern of the substrate.

Abstract: The present invention relates to a semiconductor device in which a semiconductor element and a substrate are disposed face-to-face, the mixture of the thermoplastic resin and the thermosetting resin is provided between the semiconductor element having the electrode formed thereon and the substrate having the wiring pattern formed thereon, the mixture holding in contact the electrode of the semiconductor element and the wiring pattern of the substrate.

Abstract: A flip-chip type semiconductor device includes a semiconductor chip having electrode pads formed and arranged on a chip surface thereof. Sprout-shaped metal bumps are bonded to the electrode pads on the chip, and an adhesive resin layer is formed on the chip surface of the chip such that tip ends of the sprout-shaped metal bumps are protruded from the adhesive resin layer. A circumference of the tip end of each sprout-shaped metal bump is surrounded by a protective resin material integrally swelled from the adhesive rein layer such that a tip end face of each sprout-shaped metal bump is at least exposed to the outside.

Abstract: The present invention relates to a semiconductor device in which a semiconductor element and a substrate are disposed face-to-face, the mixture of the thermoplastic resin and the thermosetting resin is provided between the semiconductor element having the electrode formed thereon and the substrate having the wiring pattern formed thereon, the mixture holding in contact the electrode of the semiconductor element and the wiring pattern of the substrate.

Abstract: A semiconductor apparatus includes a mount pad formed on a substrate and a bump formed on a semiconductor device. A plurality of needle-like or branch-like protrusions is formed on at least one of the mount pad and the bump. The plurality of protrusions of one of the mount pad and the bump engages with the other. The plurality of protrusions protrudes in directions crossing each other, or protrudes to random directions.

Abstract: A semiconductor apparatus includes a mount pad formed on a substrate and a bump formed on a semiconductor device. A plurality of needle-like or branch-like protrusions is formed on at least one of the mount pad and the bump. The plurality of protrusions of one of the mount pad and the bump engages with the other. The plurality of protrusions protrudes in directions crossing each other, or protrudes to random directions.

Abstract: In a semiconductor device including a substrate which has a primary surface, a conduction wire formed on the primary surface, a semiconductor element which has a secondary surface, a projective electrode formed on the secondary surface, an insulative resin for adhesion which is applied between the primary surface and the secondary surface and which shrinks by hardening thereof, the substrate and the semiconductor element are adhered to each other by the hardening of the insulative resin with the projective electrode and the conduction wire corresponding with each other, so that an electrical connection between the projective electrode and the conduction wire is achieved and that a residual stress is generated in the insulative resin. The residual stress has a maximum value thereof around the projective electrode.

Abstract: This invention provides a resin film preferably used for mounting a semiconductor chip on a substrate through flip-chip connection, and a method based on the use of such a resin film. The resin film has a laminated B/A/B structure where a first resin layer (A) having inorganic particles dispersed in an insulating resin is sandwiched by second and third resin layers (B) having no inorganic particles in their insulating resins.

Abstract: This invention provides a resin film preferably used for mounting a semiconductor chip on a substrate through flip-chip connection, and a method based on the use of such a resin film. The resin film has a laminated B/A/B structure where a first resin layer (A) having inorganic particles dispersed in an insulating resin is sandwiched by second and third resin layers (B) having no inorganic particles in their insulating resins.

Abstract: In a semiconductor device including a substrate which has a primary surface, a conduction wire formed on the primary surface, a semiconductor element which has a secondary surface, a projective electrode formed on the secondary surface, an insulative resin for adhesion which is applied between the primary surface and the secondary surface and which shrinks by hardening thereof, the substrate and the semiconductor element are adhered to each other by the hardening of the insulative resin with the projective electrode and the conduction wire corresponding with each other, so that an electrical connection between the projective electrode and the conduction wire is achieved and that a residual stress is generated in the insulative resin. The residual stress has a maximum value thereof around the projective electrode.