Patents by Inventor Rihito SUGANUMA

Rihito SUGANUMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11515439
    Abstract: A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction.
    Type: Grant
    Filed: December 11, 2020
    Date of Patent: November 29, 2022
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Teruaki Higo, Chikao Okamoto, Naoki Asano, Masamichi Kobayashi, Natsuko Fujiwara, Rihito Suganuma, Toshihiko Sakai, Kazuya Tsujino, Liumin Zou
  • Patent number: 11227966
    Abstract: Provided is a photoelectric conversion device capable of suppressing diffusion of a dopant in a p layer or n layer into an adjacent layer. A photoelectric conversion device is provided with a silicon substrate, a substantially intrinsic amorphous layer formed on one surface of the silicon substrate, and a first conductive amorphous layer that is formed on the intrinsic amorphous layer. The first conductive amorphous layer includes a first concentration layer and a second concentration layer that is stacked on the first concentration layer. The dopant concentration of the second concentration layer is 8×1017 cm?3 or more, and is lower than the dopant concentration of the first concentration layer.
    Type: Grant
    Filed: April 3, 2015
    Date of Patent: January 18, 2022
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Masatomi Harada, Toshihiko Sakai, Rihito Suganuma, Kazuya Tsujino, Tokuaki Kuniyoshi, Takeshi Kamikawa
  • Publication number: 20210098638
    Abstract: A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction.
    Type: Application
    Filed: December 11, 2020
    Publication date: April 1, 2021
    Inventors: TERUAKI HIGO, CHIKAO OKAMOTO, NAOKI ASANO, MASAMICHI KOBAYASHI, NATSUKO FUJIWARA, RIHITO SUGANUMA, TOSHIHIKO SAKAI, KAZUYA TSUJINO, LIUMIN ZOU
  • Patent number: 10903379
    Abstract: A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction. Therefore, the photovoltaic device has an improved heat resistance.
    Type: Grant
    Filed: March 7, 2016
    Date of Patent: January 26, 2021
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Teruaki Higo, Chikao Okamoto, Naoki Asano, Masamichi Kobayashi, Natsuko Fujiwara, Rihito Suganuma, Toshihiko Sakai, Kazuya Tsujino, Liumin Zou
  • Publication number: 20180069139
    Abstract: A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction. Therefore, the photovoltaic device has an improved heat resistance.
    Type: Application
    Filed: March 7, 2016
    Publication date: March 8, 2018
    Inventors: TERUAKI HIGO, CHIKAO OKAMOTO, NAOKI ASANO, MASAMICHI KOBAYASHI, NATSUKO FUJIWARA, RIHITO SUGANUMA, TOSHIHIKO SAKAI, KAZUYA TSUJINO, LIUMIN ZOU
  • Publication number: 20170033252
    Abstract: Provided is a photoelectric conversion device capable of suppressing diffusion of a dopant in a p layer or n layer into an adjacent layer. A photoelectric conversion device is provided with a silicon substrate, a substantially intrinsic amorphous layer formed on one surface of the silicon substrate, and a first conductive amorphous layer that is formed on the intrinsic amorphous layer. The first conductive amorphous layer includes a first concentration layer and a second concentration layer that is stacked on the first concentration layer. The dopant concentration of the second concentration layer is 8×1017 cm?3 or more, and is lower than the dopant concentration of the first concentration layer.
    Type: Application
    Filed: April 3, 2015
    Publication date: February 2, 2017
    Inventors: Masatomi HARADA, Toshihiko SAKAI, Rihito SUGANUMA, Kazuya TSUJINO, Tokuaki KUNIYOSHI, Takeshi KAMIKAWA