Abstract: There is provided a conductive material comprising a base material made up of a Cu strip, a Cu—Sn alloy covering layer formed over a surface of the base material, containing Cu in a range of 20 to 70 at. %, and having an average thickness in a range of 0.1 to 3.0 ?m, and an Sn covering layer formed over the Cu—Sn alloy covering layer having an average thickness in a range of 0.2 to 5.0 ?m, disposed in that order, such that portions of the Cu—Sn alloy covering layer are exposed the surface of the Sn covering layer, and a ratio of an exposed area of the Cu—Sn alloy covering layer to the surface of the Sn covering layer is in a range of 3 to 75%.

Abstract: There is provided a conductive material comprising a base material made up of a Cu strip, a Cu—Sn alloy covering layer formed over a surface of the base material, containing Cu in a range of 20 to 70 at. %, and having an average thickness in a range of 0.1 to 3.0 ?m, and an Sn covering layer formed over the Cu—Sn alloy covering layer having an average thickness in a range of 0.2 to 5.0 ?m, disposed in that order, such that portions of the Cu—Sn alloy covering layer are exposed the surface of the Sn covering layer, and a ratio of an exposed area of the Cu—Sn alloy covering layer to the surface of the Sn covering layer is in a range of 3 to 75%. The surface of the conductive material is subjected to a reflow process, and preferably, an arithmetic mean roughness Ra of the surface of the material, in at least one direction, is not less than 0.15 ?m while the arithmetic mean roughness Ra thereof, in all directions, is not more than 3.

Abstract: There is provided a conductive material comprising a base material made up of a Cu strip, a Cu—Sn alloy covering layer formed over a surface of the base material, containing Cu in a range of 20 to 70 at.%, and having an average thickness in a range of 0.1 to 3.0 ?m and an Sn covering layer formed over the Cu—Sn alloy covering layer having an average thickness in a range of 0.2 to 5.0 ?m, disposed in that order, such that portions of the Cu—Sn alloy covering layer are exposed the surface of the Sn covering layer, and a ratio of an exposed area of the Cu—Sn alloy covering layer to the surface of the Sn covering layer is in a range of 3 to 75%.

Abstract: There is provided a conductive material comprising a base material made up of a Cu strip, a Cu—Sn alloy covering layer formed over a surface of the base material, containing Cu in a range of 20 to 70 at.%, and having an average thickness in a range of 0.1 to 3.0 ?m, and an Sn covering layer formed over the Cu—Sn alloy covering layer having an average thickness in a range of 0.2 to 5.0 ?m, disposed in that order, such that portions of the Cu—Sn alloy covering layer are exposed the surface of the Sn covering layer, and a ratio of an exposed area of the Cu—Sn alloy covering layer to the surface of the Sn covering layer is in a range of 3 to 75%. The surface of the conductive material is subjected to a reflow process and preferably, an arithmetic mean roughness Ra of the surface of the material in at least one direction, is not less than 0.15 ?m while the arithmetic mean roughness Ra thereof, in all directions, is not more than 3.

Abstract: A high strength copper alloy of excellent bending processability containing Ni: 5-20 wt %, Sn: 0.5-3 wt %, Al: 0.5-5 wt %, Mg: 0.001-0.05 wt %, Cr: 0.001-0.1 wt %, Zn: 0.05-5 wt %, the balance of Cu and inevitable impurities, and having a tensile strength of from 80 to 120 kgf/mm.sup.2. Up to 0.2 wt % of one or more of Fe,Mn,Ti,Zr,P,In,Ta and Co can be added without a deleterious effect. The alloy is non-toxic and economical, as well as shows tensile strength and elongation at least comparable with beryllium-copper alloy and has excellent solderability and solder-resistant and heat resistant peelability. The alloy can be used suitably as materials for electric terminals, connectors, etc.

Abstract: A lead material for ceramic package ICs which comprises Ni 1.0-5.0 wt %, Co 0.2-1.0 wt %, Si 0.2-1.5 wt %, Zn 0.1-5.0 wt %, Cr 0.001-0.1 wt %, and Mn 0.02-1.0 wt %, with the remainder being Cu and inevitable impurities. It does not cause cracking to the ceramic substrate in the cooling step after silver soldering at 800.degree. to 950.degree. C., even though its coefficient of thermal expansion differs from that of ceramics. Moreover, it retains its high strength and conductivity after brazing.