Abstract: An apparatus associated with an analysis of a thin film layer comprises two layer structures (100, 102) with a cavity (104) therebetween, and an opening (110) through one of the layer structures (102) to the cavity (104), the cavity (104) being configured to receive, through the opening (110), material used to form a thin film layer (900) inside the cavity (104). At least one of the two layer structures (100, 102) comprises at least one positional indicator (108) for an analysis associated with the thin film layer (900).

Abstract: An apparatus associated with an analysis of a thin film layer comprises two layer structures (100, 102) with a cavity (104) therebetween, and an opening (110) through one of the layer structures (102) to the cavity (104), the cavity (104) being configured to receive, through the opening (110), material used to form a thin film layer (900) inside the cavity (104). At least one of the two layer structures (100, 102) comprises at least one positional indicator (108) for an analysis associated with the thin film layer (900).

Abstract: An apparatus associated with an analysis of a thin film layer comprises two layer structures (100, 102) with a cavity (104) therebetween, and an opening (110) through one of the layer structures (102) to the cavity (104), the cavity (104) being configured to receive, through the opening (110), material used to form a thin film layer (900) inside the cavity (104). At least one of the two layer structures (100, 102) comprises at least one positional indicator (108) for an analysis associated with the thin film layer (900).

Abstract: A process for selective removal of hydroxyl groups from phenolic compounds is disclosed. The process uses a combination of catalytic hydrodeoxygenation and catalytic direct deoxygenation to convert alkylphenols into alkylbenzenes.

Abstract: Electrically tunable Fabry-Perot interferometers which are produced with micromechanical (MEMS) technology. Producing interferometers with prior art processes includes costly and complicated production phases. Therefore, it has not been possible to apply interferometers in consumer mass products. According to the present solution, the Fabry-Perot cavity is made by removing a sacrificial layer (112) which has been polymer material. A mirror layer (113, 117-120) which is produced above the sacrificial layer can be made with atomic layer deposition technology, for example. According to a preferable embodiment, electrodes (106b, 115b) of the mirror structures are formed by using sputtering or evaporation. With the present solution it is possible to avoid the above mentioned problems related with prior art.

Abstract: Electrically tunable Fabry-Perot interferometers which are produced with micromechanical (MEMS) technology. Producing interferometers with prior art processes includes costly and complicated production phases. Therefore, it has not been possible to apply interferometers in consumer mass products. According to the present solution, the Fabry-Perot cavity is made by removing a sacrificial layer (112) which has been polymer material. A mirror layer (113, 117-120) which is produced above the sacrificial layer can be made with atomic layer deposition technology, for example. According to a preferable embodiment, electrodes (106b, 115b) of the mirror structures are formed by using sputtering or evaporation. With the present solution it is possible to avoid the above mentioned problems related with prior art.

Abstract: An apparatus associated with an analysis of a thin film layer comprises two layer structures (100, 102) with a cavity (104) therebetween, and an opening (110) through one of the layer structures (102) to the cavity (104), the cavity (104) being configured to receive, through the opening (110), material used to form a thin film layer (900) inside the cavity (104). At least one of the two layer structures (100, 102) comprises at least one positional indicator (108) for an analysis associated with the thin film layer (900).

Abstract: A method for manufacturing a multi-layer substrate structure such as a CSOI wafer structure (cavity-SOI, silicon-on-insulator) comprising obtaining a first and second wafer, such as two silicon wafers, wherein at least one of the wafers may be optionally provided with a material layer such as an oxide layer (302, 404), forming a cavity on the bond side of the first wafer (306, 406), depositing, preferably by ALD (Atomic Layer Deposition), a material layer, such as thin alumina layer, on either wafer arranged so as to at least in places face the other wafer and cover at least portion of the cavity of the first wafer, such as bottom, wall and/or edge thereof, and enable stopping etching, such as dry etching, into the underlying material (308, 408), and bonding the wafers provided with at least the aforesaid ALD layer as an intermediate layer together to form the multi-layer semiconductor substrate structure (310, 312). A related multi-layer substrate structure is presented.

Abstract: Electrically tunable Fabry-Perot interferometers which are produced with micromechanical (MEMS) technology. Producing interferometers with prior art processes includes costly and complicated production phases. Therefore, it has not been possible to apply interferometers in consumer mass products. According to the present solution, the Fabry-Perot cavity is made by removing a sacrificial layer (112) which has been polymer material. A mirror layer (113, 117-120) which is produced above the sacrificial layer can be made with atomic layer deposition technology, for example. According to a preferable embodiment, electrodes (106b, 115b) of the mirror structures are formed by using sputtering or evaporation. With the present solution it is possible to avoid the above mentioned problems related with prior art.