Patents by Inventor Rik Jonckheere
Rik Jonckheere has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10359694Abstract: The disclosure is related to a lithographic mask for EUV lithography, to a method for producing the mask, to a method for printing a pattern with the mask, to a stepper/scanner configured to print a pattern with the mask as well as to a computer-implemented method for calculating a deformation of the pattern. The mask comprises an absorber pattern, which is intentionally deformed in the 2-dimensional plane of the EUV mask, with respect to the intended pattern. The deformation of the pattern is based on a previous measurement of the location of multilayer defects on the blank, and calculated so that in the deformed pattern, a maximum of multilayer defects are covered by absorber material. When the pattern is subsequently printed on a semiconductor wafer in a stepper/scanner, the scanner operation is modulated so that the pattern deformation is not reproduced on the wafer.Type: GrantFiled: August 30, 2017Date of Patent: July 23, 2019Assignee: IMEC VZWInventors: Rik Jonckheere, Koen D'have
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Patent number: 10353284Abstract: The present disclosure provides a lithographic reticle system comprising a reticle, a first pellicle membrane mounted in front of the reticle, and a second pellicle membrane mounted in front of the first pellicle membrane, wherein the first pellicle membrane is arranged between the reticle and the second pellicle membrane, and wherein the second pellicle membrane is releasably mounted in relation to the first pellicle membrane and the reticle.Type: GrantFiled: May 15, 2018Date of Patent: July 16, 2019Assignees: IMEC VZW, IMEC USA NANOELECTRONICS DESIGN CENTERInventors: Rik Jonckheere, Cedric Huyghebaert, Emily Gallagher
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Publication number: 20180329290Abstract: The present disclosure provides a lithographic reticle system comprising a reticle, a first pellicle membrane mounted in front of the reticle, and a second pellicle membrane mounted in front of the first pellicle membrane, wherein the first pellicle membrane is arranged between the reticle and the second pellicle membrane, and wherein the second pellicle membrane is releasably mounted in relation to the first pellicle membrane and the reticle.Type: ApplicationFiled: May 15, 2018Publication date: November 15, 2018Applicants: IMEC VZW, Imec USA Nanoelectronics Design CenterInventors: Rik Jonckheere, Cedric Huyghebaert, Emily Gallagher
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Publication number: 20180059529Abstract: The disclosure is related to a lithographic mask for EUV lithography, to a method for producing the mask, to a method for printing a pattern with the mask, to a stepper/scanner configured to print a pattern with the mask as well as to a computer-implemented method for calculating a deformation of the pattern. The mask comprises an absorber pattern, which is intentionally deformed in the 2-dimensional plane of the EUV mask, with respect to the intended pattern. The deformation of the pattern is based on a previous measurement of the location of multilayer defects on the blank, and calculated so that in the deformed pattern, a maximum of multilayer defects are covered by absorber material. When the pattern is subsequently printed on a semiconductor wafer in a stepper/scanner, the scanner operation is modulated so that the pattern deformation is not reproduced on the wafer.Type: ApplicationFiled: August 30, 2017Publication date: March 1, 2018Applicant: IMEC VZWInventors: Rik Jonckheere, Koen D'have
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Patent number: 9086638Abstract: A sensor for sensing contamination in an application system is disclosed. In one aspect, the sensor comprises a capping layer. The sensor is adapted to cause a first reflectivity change upon initial formation of a first contamination layer on the capping layer when the sensor is provided in the system. The first reflectivity change is larger than an average reflectivity change upon formation of a thicker contamination layer on the capping layer and larger than an average reflectivity change upon formation of an equal contamination on the actual mirrors of the optics of the system.Type: GrantFiled: October 26, 2011Date of Patent: July 21, 2015Assignee: IMECInventors: Rik Jonckheere, Anne-Marie Goethals, Gian Francesco Lorusso, Ivan Pollentier
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Publication number: 20120099092Abstract: A sensor for sensing contamination in an application system is disclosed. In one aspect, the sensor comprises a capping layer. The sensor is adapted to cause a first reflectivity change upon initial formation of a first contamination layer on the capping layer when the sensor is provided in the system. The first reflectivity change is larger than an average reflectivity change upon formation of a thicker contamination layer on the capping layer and larger than an average reflectivity change upon formation of an equal contamination on the actual minors of the optics of the system.Type: ApplicationFiled: October 26, 2011Publication date: April 26, 2012Applicant: IMECInventors: Rik Jonckheere, Anne-Marie Goethals, Gian Francesco Lorusso, Ivan Pollentier
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Patent number: 8006202Abstract: A method of designing a lithographic mask for use in lithographic processing of a substrate is disclosed. The lithographic processing comprises irradiating mask features of a lithographic mask using a predetermined irradiation configuration. In one aspect, the method comprises obtaining an initial design for the lithographic mask comprising a plurality of initial design features having an initial position. The method further comprises applying at least one shift to at least one initial design feature and deriving there from an altered design so as to compensate for shadowing effects when irradiating the substrate using a lithographic mask corresponding to the altered design in the predetermined irradiation configuration. Also disclosed herein are a corresponding design, a method of setting up lithographic processing, a system for designing a lithographic mask, a lithographic mask, and a method of manufacturing it.Type: GrantFiled: February 21, 2008Date of Patent: August 23, 2011Assignees: IMEC, Samsung Electronics Co., Ltd.Inventors: Gian Francesco Lorusso, In Sung Kim, Byeong Soo Kim, Anne-Marie Goethals, Rik Jonckheere, Jan Hermans
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Patent number: 7750319Abstract: A method and system for measuring contamination of a lithographic element is disclosed. In one aspect, the method comprises providing a first lithographical element in a process chamber. The method further comprises providing a second lithographical element in the process chamber. The method further comprises covering part of the first lithographical element providing a reference region. The method further comprises providing a contaminant in the process chamber. The method further comprises redirecting an exposure beam via the test region of the first lithographical element towards the second lithographical element whereby at least one of the lithographical elements gets contaminated by the contaminant. The method further comprises measuring the level of contamination of the at least one contaminated lithographical element in the process chamber.Type: GrantFiled: August 28, 2007Date of Patent: July 6, 2010Assignee: IMECInventors: Gian Francesco Lorusso, Rik Jonckheere, Anne-Marie Goethals, Jan Hermans
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Publication number: 20090103069Abstract: A sensor for sensing contamination in an application system is disclosed. In one aspect, the sensor comprises a capping layer. The sensor is adapted to cause a first reflectivity change upon initial formation of a first contamination layer on the capping layer when the sensor is provided in the system. The first reflectivity change is larger than an average reflectivity change upon formation of a thicker contamination layer on the capping layer and larger than an average reflectivity change upon formation of an equal contamination on the actual mirrors of the optics of the system.Type: ApplicationFiled: September 23, 2008Publication date: April 23, 2009Applicant: Interuniversitair Microelektronica Centrum vzw (IMEC)Inventors: Rik Jonckheere, Anne-Marie Goethals, Gian Francesco Lorusso, Ivan Pollentier
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Publication number: 20080315125Abstract: A method and system for measuring contamination of a lithographic element is disclosed. In one aspect, the method comprises providing a first lithographical element in a process chamber. The method further comprises providing a second lithographical element in the process chamber. The method further comprises covering part of the first lithographical element providing a reference region. The method further comprises providing a contaminant in the process chamber. The method further comprises redirecting an exposure beam via the test region of the first lithographical element towards the second lithographical element whereby at least one of the lithographical elements gets contaminated by the contaminant. The method further comprises measuring the level of contamination of the at least one contaminated lithographical element in the process chamber.Type: ApplicationFiled: August 28, 2007Publication date: December 25, 2008Applicant: Interuniversitair Microelektronica Centrum (IMEC) vzwInventors: Gian Francesco Lorusso, Rik Jonckheere, Anne-Marie Goethals, Jan Hermans
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Publication number: 20080229273Abstract: A method of designing a lithographic mask for use in lithographic processing of a substrate is disclosed. The lithographic processing comprises irradiating mask features of a lithographic mask using a predetermined irradiation configuration. In one aspect, the method comprises obtaining an initial design for the lithographic mask comprising a plurality of initial design features having an initial position. The method further comprises applying at least one shift to at least one initial design feature and deriving there from an altered design so as to compensate for shadowing effects when irradiating the substrate using a lithographic mask corresponding to the altered design in the predetermined irradiation configuration. Also disclosed herein are a corresponding design, a method of setting up lithographic processing, a system for designing a lithographic mask, a lithographic mask, and a method of manufacturing it.Type: ApplicationFiled: February 21, 2008Publication date: September 18, 2008Applicants: Interuniversitair Microelektronica Centrum (IMEC) vzw, Samsung Electronics Co., Ltd.Inventors: Gian Francesco Lorusso, In Sung Kim, Byeong Soo Kim, Anne-Marie Goethals, Rik Jonckheere, Jan Hermans