Patents by Inventor Rika Shinohara

Rika Shinohara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method for forming insulating film
    Patent number: 6448666
    Abstract: The present invention relates to a method for forming an insulating film with a low relative dielectric constant. A method for forming an insulating film in terms of a plasma chemical vapor deposition, characterized in that a Si supply gas, an oxygen supply gas, and a fluorine supply gas are used a material gas to form said insulating film, and said insulating film is formed under a film forming condition that a density of said insulating film to be formed is equal to or more than 2.25 g/cm3.
    Type: Grant
    Filed: September 2, 1999
    Date of Patent: September 10, 2002
    Assignee: Fujitsu Limited
    Inventors: Hiroshi Kudo, Rika Shinohara
  • Method of making ferroelectric film with protective cover film against hydrogen and moisture
    Patent number: 6344363
    Abstract: A ferroelectric film is formed on a principal surface of an underlying substrate. By the vapor deposition using high density plasma, an insulating protection film is deposited so that the ferroelectric film is covered therewith. The deposited protection film can prevent the ferroelectric film from deteriorating.
    Type: Grant
    Filed: August 28, 1998
    Date of Patent: February 5, 2002
    Assignee: Fujitsu Limited
    Inventors: Rika Shinohara, Atsuhiro Tsukune, Hiroshi Kudo
  • Method for forming insulating film
    Patent number: 6037274
    Abstract: The present invention relates to a method for forming an insulating film with a low relative dielectric constant. A method for forming an insulating film in terms of a plasma chemical vapor deposition, characterized in that a Si supply gas, an oxygen supply gas, and a fluorine supply gas are used a material gas to form said insulating film, and said insulating film is formed under a film forming condition that a density of said insulating film to be formed is equal to or more than 2.25 g/cm.sup.3.
    Type: Grant
    Filed: February 7, 1996
    Date of Patent: March 14, 2000
    Assignee: Fujitsu Limited
    Inventors: Hiroshi Kudo, Rika Shinohara