Abstract: A composition for polishing silicon nitride according to the present invention includes colloidal silica, a polishing aid including a phosphoric acid compound and a sulfuric acid compound. By further including an oxidizing agent, a first selectivity representing the ratio of a polishing speed for a metal layer to a polishing speed for a silicon nitride layer and a second selectivity representing the ratio of a polishing speed for an oxide insulating layer to a polishing speed for a silicon nitride are controlled.

Abstract: Simplification of a preparation step of a cell population used for the treatment of ischemic diseases, and provision of a cell population that shows more effective treatment are shown. A method of producing a cell population wherein a vascular endothelial progenitor cell and/or an anti-inflammatory macrophage are/is enriched, including cultivating a mononuclear cell derived from bone marrow, cord blood or peripheral blood in a serum-free medium containing stem cell factor, interleukin-6, FMS-like tyrosine kinase 3 ligand, thrombopoietin and vascular endothelial cell growth factor, and proliferating vascular endothelial progenitor cell from the cell; and a cell population obtained by the method are shown.

Abstract: A composition for polishing silicon nitride according to the present invention includes colloidal silica, a polishing aid including a phosphoric acid compound and a sulfuric acid compound. By further including an oxidizing agent, a first selectivity representing the ratio of a polishing speed for a metal layer to a polishing speed for a silicon nitride layer and a second selectivity representing the ratio of a polishing speed for an oxide insulating layer to a polishing speed for a silicon nitride are controlled.

Abstract: A polishing composition of the invention is a polishing composition which is suitable for polishing a metal film, which is so-called final polishing, and contains colloidal silica having an average particle size of 20 nm or more and less than 80 nm which is determined by particle size distribution measurement using a light scattering method as abrasive grains; and at least one selected from iodic acid and its salt as an oxidizing agent, with the balance of water. By containing such components, the polishing composition shows nonselectivity, while being sufficiently suppressed in dishing and erosion.

Abstract: Simplification of a preparation step of a cell population used for the treatment of ischemic diseases, and provision of a cell population that shows more effect by the treatment. A method of producing a cell population wherein a vascular endothelial progenitor cell and/or an anti-inflammatory macrophage are/is enriched, including cultivating a mononuclear cell derived from bone marrow, cord blood or peripheral blood in a serum-free medium containing stem cell factor, interleukin-6, FMS-like tyrosine kinase 3 ligand, thrombopoietin and vascular endothelial cell growth factor, and proliferating vascular endothelial progenitor cell from the cell; and a cell population obtained by the method, etc.

Abstract: An object of one embodiment of the present invention is to provide a polishing slurry which can reduce dishing and erosion of a to-be-polished semiconductor wafer. The polishing slurry contains an oxidizing agent and two or more kinds of abrasive grains for polishing, i.e., fumed silica and colloidal silica. A ratio (selectivity ratio) between a polishing rate of a metal film such as a tungsten film and a polishing rate of an insulating film (oxide film) such as a SiO2 film can be adjusted by changing a mixing ratio between fumed silica and colloidal silica, and dishing and erosion of the semiconductor wafer can be thus reduced.

Abstract: A composition for polishing silicon nitride according to the present invention includes colloidal silica, a polishing aid including a phosphoric acid compound and a sulfuric acid compound. By further including an oxidizing agent, a first selectivity representing the ratio of a polishing speed for a metal layer to a polishing speed for a silicon nitride layer and a second selectivity representing the ratio of a polishing speed for an oxide insulating layer to a polishing speed for a silicon nitride are controlled.

Abstract: A polishing composition of the invention is a polishing composition which is suitable for polishing a metal film, which is so-called final polishing, and contains colloidal silica having an average particle size of 20 nm or more and less than 80 nm which is determined by particle size distribution measurement using a light scattering method as abrasive grains; and at least one selected from iodic acid and its salt as an oxidizing agent, with the balance of water. By containing such components, the polishing composition shows non-selectivity, while being sufficiently suppressed in dishing and erosion.

Abstract: An object of one embodiment of the present invention is to provide a polishing slurry which can reduce dishing and erosion of a to-be-polished semiconductor wafer. The polishing slurry contains an oxidizing agent and two or more kinds of abrasive grains for polishing, i.e., fumed silica and colloidal silica. A ratio (selectivity ratio) between a polishing rate of a metal film such as a tungsten film and a polishing rate of an insulating film (oxide film) such as a SiO2 film can be adjusted by changing a mixing ratio between fumed silica and colloidal silica, and dishing and erosion of the semiconductor wafer can be thus reduced.

Abstract: A video combining apparatus to superimpose a virtual image such a CG image on a video image of the real world or on a see-through type display device. An area in which the virtual image is not to be displayed can be easily designated by a user. If the user holds a frame with markers in his/her sight, the frame is image-sensed in the video image of the real world. The area designated by the user is detected by detecting the position of the marker in the video image, and the virtual image is not superimposed in this area.

Abstract: A system is provided for obtaining parameters about the position and orientation of a camera, where the camera has a fixed position and orientation, by using the image coordinates and world coordinates of markers included in an image photographed by the camera. This system uses a live-image display mode for successively obtaining images input to the camera and a still-image display mode for obtaining an image input to the camera at predetermined time. The markers can be extracted by using the image obtained in either mode. The system can select either automatic-extraction mode or manual-extraction mode for extracting the marker in live images, so that the markers can be extracted with a high degree of accuracy under all conditions to obtain the position and orientation parameters of the camera.

Abstract: A system is provided for obtaining parameters about the position and orientation of a camera, where the camera has a fixed position and orientation, by using the image coordinates and world coordinates of markers included in an image photographed by the camera. This system uses a live-image display mode for successively obtaining images input to the camera and a still-image display mode for obtaining an image input to the camera at predetermined time. The markers can be extracted by using the image obtained in either mode. The system can select either automatic-extraction mode or manual-extraction mode for extracting the marker in live images, so that the markers can be extracted with a high degree of accuracy under all conditions to obtain the position and orientation parameters of the camera.

Abstract: A video combining apparatus to superimpose a virtual image such a CG image on a video image of the real world or on a see-through type display device. An area in which the virtual image is not to be displayed can be easily designated by a user. If the user holds a frame with markers in his/her sight, the frame is image-sensed in the video image of the real world. The area designated by the user is detected by detecting the position of the marker in the video image, and the virtual image is not superimposed in this area.

Abstract: A semiconductor element is provided with a semiconductor substrate with an integrated circuit to which external electrodes are connected. The external electrodes are made of at least one layer selected from among a copper layer, a Sn—Cu alloy layer and a Sn—Ag alloy layer.

Abstract: A semiconductor element is provided with a semiconductor substrate with an integrated circuit to which external electrodes are connected. The external electrodes are made of at least one layer selected from among a copper layer, a Sn—Cu alloy layer and a Sn—Ag alloy layer.