Patents by Inventor Rikako Minatoya

Rikako Minatoya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Epitaxial growth method of semiconductor
    Patent number: 5766345
    Abstract: An epitaxial growth method of semiconductor can reliably avoid irregularities from being produced when a II-VI compound semiconductor is grown epitaxially. When this method is applied to a method of manufacturing a semiconductor light-emitting device, it is possible to obtain a semiconductor light-emitting device having a long life and excellent light-emitting characteristic. When a II-VI compound semiconductor is grown epitaxially, a VI/II ratio, i.e., a supplying ratio of VI-group element and II-group element used in the epitaxial growth is selected in a range of from 1.3 to 2.5.
    Type: Grant
    Filed: October 16, 1995
    Date of Patent: June 16, 1998
    Assignee: Sony Corporation
    Inventors: Shigetaka Tomiya, Kazushi Nakano, Satoshi Ito, Rikako Minatoya