Abstract: A plasma processing apparatus according to the present invention includes at least a pair of elongated electrode units which are faced to each other, each electrode unit including an elongated conductive member extending in a longitudinal direction, an elongated dielectric member which is provided on the conductive member in the longitudinal direction, and a fastening member for fastening the conductive member and the dielectric member to each other, wherein the fastening member fastens the conductive member and the dielectric member to each other such that they can displace with respect to each other in the event of the occurrence of thermal expansions of the conductive member and the dielectric member.

Abstract: A vacuum treatment method, which controls work to a target temperature and applies a vacuum treatment thereto, comprising the steps of placing work on a temperature-adjustable table in a vacuum treatment chamber, and feeding thermal conductivity gas into between the table and the work to impart thermal conductivity. The gas feeding step comprises the steps of individually discharging thermal conductivity gases from the respective gas sources of at least two thermal conductivity gases of different thermal conductivities at predetermined flow rates, individually detecting the pressures of the thermal conductivity gases, and individually controlling the thermal conductivity gas feed flow rates on the basis of the detected pressures.

Abstract: A plasma processing system comprises: a processing vessel; a supporting table, provided in the processing vessel, for supporting thereon the object; a gas supply system for supplying a process gas into the processing vessel; and an electromagnetic supply system for generating the plasma of the process gas. The supporting table includes a susceptor provided in the processing vessel, and an electrostatic chuck provided on the susceptor. The electrostatic chuck has a porous dielectric member and a porous conductive member provided within the dielectric member, so that a heat transfer gas can uniformly pass therethrough. In place of the porous conductive member, a conductive member having a large number of through holes may be used. Between the susceptor and the electrostatic chuck, a gas buffer communicated with a heat transfer gas feeding passage is formed.

Abstract: The plasma processing apparatus according to the present invention comprises a lower electrode 12 for supporting a wafer W in a chamber 11, shield member 19 for shielding an inside circumferential surface of the chamber 11 from a plasma for processing the wafer W, and a baffle plate 18 disposed in a gap between the shield member 19 and the lower electrode 12, and scattering and exhausting a gas in the chamber 11, a resin plate 20 being removably mounted on an inside circumferential surface of the shield member 19, and a circumferential compression stress being generated in the resin plate 20.

Abstract: A lower insulating member 13 is arranged around a suscepter 6 as a lower electrode, and an upper insulating member 31 is arranged around an upper electrode 21. An outer end portion 31a of the upper insulating member is positioned outside an lower insulating member 13, to be lower than the upper surface of a wafer W. The narrowest distance between the lower insulating member 13 and the upper insulating member 31 is arranged to be smaller than a gap G between electrodes. Diffusion of a plasma generated between electrodes is restricted and prevented from spreading to the sides, so that inner walls of a processing container 3 are not sputtered.

Abstract: A system for implanting ions into a semiconductor wafer includes an ion source device, a mass spectrometer, an accelerating tube and a process chamber arranged in this order. A rotating disk is arranged in the process chamber to support a plurality of wafers thereon. A Faraday cup is arranged in the process chamber, corresponding to an ion beam shooting position. The Faraday cup serves to shut up therein secondary electrons and ions generated from the wafer at the time of ion implantation for measuring the amount of ions implanted. A suppressor electrode is provided to suppress the flow-out of the secondary electrons from the Faraday cup. The suppressor electrode comprises a cylindrical body made of carbon and an SiC film formed on the inner face of the cylindrical body. The SiC film serves as a resistance of the electrode surface for preventing rapid discharge from being caused at the electrode surface.