Patents by Inventor Rikito Sato

Rikito Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF FRAGMENTING OR METHOD OF GENERATING CRACKS IN SEMICONDUCTOR MATERIAL, AND METHOD OF MANUFACTURING SEMICONDUCTOR MATERIAL LUMPS
    Publication number: 20210269942
    Abstract: Provided are a method of fragmenting or a method of generating cracks in a semiconductor material, and a method of producing semiconductor material lumps, which can prevent contamination from an electrode material accompanied by application of a high-voltage pulse; in a method of fragmenting or generating cracks in the semiconductor material by applying high-voltage pulse to the semiconductor material disposed in liquid, new fluid is supplied towards at least one of a part on which the high-voltage pulse is applied and a vicinity of an electrode part, and the new fluid and a part of the liquid are drawn from the liquid and discharged.
    Type: Application
    Filed: July 3, 2019
    Publication date: September 2, 2021
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Masahiro Kanai, Rikito Sato, Munehiro Takasugi, Koki Umehara
  • Polycrystalline silicon rod and method for processing the same
    Patent number: 7455731
    Abstract: A polycrystalline silicon rod according to present invention has a structure for hanging of polycrystalline silicon rods to each other end-to-end, so that the efficiency of melting polycrystalline silicon can be increased considerably. A polycrystalline silicon rod obtained by entirely or partially removing a peripheral portion from the rod to leave a central portion, and processing the central portion, preferably, the peripheral portion is removed by grinding in an amount corresponding to 10 to 60% of the diameter of the rod, and then subjected to groove-forming processing. This makes annealing unnecessary.
    Type: Grant
    Filed: May 1, 2006
    Date of Patent: November 25, 2008
    Assignee: Mitsubishi Materials Corporation
    Inventors: Mamoru Nakano, Yukio Yamaguchi, Teruhisa Kitagawa, Rikito Sato, Naoki Hatakeyama
  • Polycrystalline silicon rod and method for processing the same
    Publication number: 20060228565
    Abstract: A polycrystalline silicon rod according to present invention has a structure for hanging of polycrystalline silicon rods to each other end-to-end, so that the efficiency of melting polycrystalline silicon can be increased considerably. A polycrystalline silicon rod obtained by entirely or partially removing a peripheral portion from the rod to leave a central portion, and processing the central portion, preferably, the peripheral portion is removed by grinding in an amount corresponding to 10 to 60% of the diameter of the rod, and then subjected to groove-forming processing. This makes annealing unnecessary.
    Type: Application
    Filed: May 1, 2006
    Publication date: October 12, 2006
    Applicant: Mitsubishi Materials Polycrystalline Silicon Corp.
    Inventors: Mamoru Nakano, Yukio Yamaguchi, Teruhisa Kitagawa, Rikito Sato, Naoki Hatakeyama
  • Polycrystalline silicon rod and method of processing the same
    Patent number: 7060355
    Abstract: A polycrystalline silicon rod according to present invention has a structure for hanging of polycrystalline silicon rods to each other end-to-end, so that the efficiency of melting polycrystalline silicon can be increased considerably. A polycrystalline silicon rod obtained by entirely or partially removing a peripheral portion from the rod to leave a central portion, and processing the central portion, preferably, the peripheral portion is removed by grinding in an amount corresponding to 10 to 60% of the diameter of the rod, and then subjected to groove-forming processing. This makes annealing unnecessary.
    Type: Grant
    Filed: June 1, 2001
    Date of Patent: June 13, 2006
    Assignee: Mitsubishi Materials Polycrystalline Silicon Corporation
    Inventors: Mamoru Nakano, Yukio Yamaguchi, Teruhisa Kitagawa, Rikito Sato, Naoki Hatakeyama
  • Polycrystalline silicon rod and method of processing the same
    Publication number: 20030183162
    Abstract: A polycrystalline silicon rod according to present invention has a structure for hanging of polycrystalline silicon rods to each other end-to-end, so that the efficiency of melting polycrystalline silicon can be increased considerably. A polycrystalline silicon rod obtained by entirely or partially removing a peripheral portion from the rod to leave a central portion, and processing the central portion, preferably, the peripheral portion is removed by grinding in an amount corresponding to 10 to 60% of the diameter of the rod, and then subjected to groove-forming processing. This makes annealing unnecessary.
    Type: Application
    Filed: May 15, 2003
    Publication date: October 2, 2003
    Inventors: Mamoru Nakano, Yukio Yamaguchi, Teruhisa Kitagawa, Rikito Sato, Naoki Hatakeyama